2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 3 2 1 4 ID 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6 V Collector current IC 0.8 A Collector peak current ic (peak) 1.5 A E to C diode forward current ID 0.6 A 1.0 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 25 — 35 V I C = 1 mA, RBE = ∞ Collector to emitter sustaining voltage VCEO(sus) 25 — 35 V I C = 0.8 A, RBE = ∞, L = 20 mH Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.2 µA VCB = 20 V, IE = 0 I CEO — — 0.5 µA VCE = 20 V, RBE = ∞ Emitter cutoff current I EBO — — 0.2 µA VEB = 5 V, IC = 0 DC current transfer ratio hFE 250 — 1200 Collector to emitter saturation voltage VCE(sat) — — 0.4 V I C = 0.8 A, IB = 80 mA*1 E to C diode forward voltage VD — — 1.5 V I D = 0.6 A*1 Notes: 1. Pulse test 2. Marking is “ES”. 2 VCE = 2 V, IC = 0.1 A*1 2SD1974 Area of Safe Operation Maximum Collector Dissipation Curve 10 pe ra tio n Ta = 25°C 1 Shot Pulse 0.01 0.01 0.3 1.0 3 10 30 100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 1.0 10 Ta = 25°C 1 Shot Pulse 8 Collector Current IC (A) Diode Current ID (A) s s O 0.1 Area of Safe Operation of Emitter to Collector Diode 6 4 2 0 0.1 C m 50 100 150 Ambient Temperature Ta (°C) D m IC(max) 0.3 0.03 0 10 0.4 = 0.8 iC(peak) 1.0 1 Collector Current IC (A) 3 PW Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 0.8 1.8 1.6 1.4 1.2 0.6 1.0 0.8 0.4 0.6 0.4 0.2 0.2 mA IB = 0 Ta = 25°C 0.3 1.0 3 Pulse Width PW (ms) 10 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 3 2SD1974 Saturation Voltage vs. Collector Current Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Collector Current IC (A) 1.0 0.8 0.6 0.4 VCE = 2 V Ta = 25°C Pulse 0.2 0 0.4 0.8 1.2 1.6 2.0 Base to Emitter Voltage VBE (V) 10 3 1.0 0.1 0.03 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector Current IC (A) 1.0 3,000 Diode Current ID (A) DC Current Transfer Ratio hFE 1.0 VCE = 2 V Pulse 25 Ta = 75°C –25 100 0.8 0.6 0.4 0.2 30 10 0.001 0.003 0.01 0.03 0.1 0.3 Collector Current IC (A) 4 t) (sa V CE Typical Characteristics of Emitter to Collector Diode 10,000 300 VBE(sat) 0.3 DC Current Transfer Ratio vs. Collector Current 1,000 IC = 10 IB Ta = 25°C Pulse 1.0 0 Ta = 25°C Pulse 0.4 0.8 1.2 1.6 2.0 Emitter to Collector Forward Voltage VD (V) 2SD1974 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1,000 300 Ta = 25°C f = 1 MHz IE = 0 100 30 10 3 1 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) 5 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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