ETC 4AM13

4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.4 , VGS = 10 V, I D = 1.5 A
P-channel: RDS(on) ≤ 0.45 , VGS = –10 V, I D = –1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
4AM13
Outline
SP-10
3
D
5
D
4
G
7
D
12
34
56
78
9 10
9
D
6
G
8
G
2G
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
S 10
1S
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Rating
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
3
–3
A
12
–12
A
3
–3
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
28
W
Channel dissipation
Pch*
4
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
2
4AM13
Electrical Characteristics (Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V(BR)DSS
60
—
—
–60
—
—
V
I D = 10 mA, VGS = 0
Gate to source
breakdown voltage
V(BR)GSS
±20
—
—
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak
current
I GSS
—
—
±10
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain I DSS
current
—
—
250
—
—
–250 µA
VDS = 50 V, VGS = 0
Gate to source cutoff
voltage
VGS(off)
1.0
—
2.0
–1.0
—
–2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source
on state resistance
RDS(on)
—
0.25
0.35
—
0.28
0.4
Ω
I D = 1.5 A,
VGS = 10 V*1
—
0.35
0.5
—
0.4
0.55
Ω
I D = 1.5 A, VGS = 4 V*1
Forward transfer
admittance
|yfs|
1.5
2.5
—
1.5
2.5
—
S
I D = 1.5 A,
VDS = 10 V*1
Input capacitance
Ciss
—
240
—
—
400
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
115
—
—
240
—
pF
f = 1 MHz
Reverse transfer
capacitance
Crss
—
35
—
—
70
—
pF
Turn-on delay time
t d(on)
—
4
—
—
5
—
ns
I D = 1.5 A, VGS = 10 V,
Rise time
tr
—
20
—
—
25
—
ns
RL = 20 Ω
Turn-off delay time
t d(off)
—
80
—
—
180
—
ns
Fall time
tf
—
40
—
—
80
—
ns
Body to drain diode
forward voltage
VDF
—
1.2
—
—
–1.1
—
V
I F = 3 A, VGS = 0
Body to drain diode
reverse recovery time
t rr
—
75
—
—
140
—
ns
I F = 3 A, VGS = 0,
dIF/dt = 50 A/µs
Note:
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
3
4AM13
Maximum Channel Dissipation Curve
Maximum Channel Dissipation Curve
30
Condition : Channel Dissipation of
each die is identical
5
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
4
3
2
1
Channel Dissipation Pch (W)
Channel Dissipation Pch (W)
6
10
0
Maximum Safe Operation Area
(P-Channel)
–5
–5
–2
–1
–0.5
–0.2
–0.1
10 µs
ea
ar
100 µs
)
is on
PW
th S (
1
D
n
=
m
i R
10
s
n
y
D
ms
tio d b
C
a
r ite
(1
O
e
pe
Sh
p
O lim
ra
ot)
tio
is
n
(T
C =
25
°C
)
Ta = 25°C
–0.05
–1
–10 –30 –100
–0.1 –0.3
–3
Drain to Source Voltage VDS (V)
4
Drain Current ID (A)
Drain Current ID (A)
–10
100 125
50
25
75
Case Temperature TC (°C)
150
Typical Output Characteristics
–50
–20
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
20
25
75
50
100 125 150
Ambient Temperature Ta (°C)
0
Condition : Channel Dissipation of
each die is identical
–4
–10 V
–5 V
–4 V
Pulse Test
–3.5 V
–3
–2
–1
–3.0 V
–2.5 V
VGS = –2.0 V
0
–2
–6
–8
–4
–10
Drain to Source Voltage VDS (V)
–5
–4
–3
–2
–1
0
5
2
1.0
0.5
0.2
0.1
0.05
–0.2
Typical Transfer Characteristics
–25°C
TC = 25°C
75°C
VDS = –10 V
Pulse Test
–1
–3
–4
–2
–5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
VGS = –4 V
–10 V
–5 –10 –20
–0.5 –1
–2
Drain Current ID (A)
–2.5
–2
–1.5
–1
–0.5
0
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
–5 A
VGS = –4 V
VGS = –10 V
40
0
80
120
Case Temperature TC (°C)
4AM13
160
–5 A
–2 A
–1 A
ID = –1, –2 A
Static Drain to Source on State
Resistance vs. Temperature
–2
–6
–8
–4
–10
Gate to Source Voltage VGS (V)
ID = –1 A
–2 A
–5 A
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
0.8
0.6
0.4
0.2
0
–40
5
1,000
100
10
0
Forward Transfer Admittance
vs. Drain Current
10
VDS = –10 V
–25°C
Pulse Test
T
5
C = 25°C
75°C
2
1
0.5
0.2
–5
Reverse Recovery Time trr (ns)
500
200
100
50
0
Body to Drain Diode Reverse
Recovery Time
8
VDD = –10 V
–25 V
VGS
VDD = –50 V
–25 V
–10 V
16
24
32
Gate Charge Qg (nc)
ID = –3 A
–50 V
VDS
Dynamic Input Characteristics
20
di/dt = 50 A/µs, VGS = 0
10 Ta = 25°C
Pulse Test
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current IDR (A)
0
–20
–40
–60
–80
–100
Drain to Source Voltage VDS (V)
0.1
–0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current ID (A)
Crss
Coss
Ciss
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
–20
–50
0
–10
–30
–40
Drain to Source Voltage VDS (V)
0
–4
–8
–12
–16
–20
40
Gate to Source Voltage VGS (V)
Forward Transfer Admittance yfs (S)
4AM13
6
Capacitance C (pF)
Switching Time t (ns)
500
200
100
Switching Characteristics
tf
td (off)
tr
50 VGS = –10 V
PW = 2 µs, duty < 1%
20
10
td (on)
5
–0.1 –0.2 –0.5 –1 –2
–5
Drain Current ID (A)
–10
Reverse Drain Current IDR (A)
–5
–4
–3
–2
–1
0
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
–10 V
–5 V
VGS = 0, 5 V
–0.8 –1.2
–2.0
–0.4
–1.6
Source to Drain Voltage VSD (V)
4AM13
7
4AM13
Maximum Safe Operation Area
(N-Channel)
Typical Output Characteristics
5
10
3
1
0.3
0.1
0.05
0.1
ea
10
ar
s (on)
i
10 µs
th S
0
PW
in D
µs
n R
1
io by
=
m
t
D
d
a
1
s
r e
0
C
m
pe it
O
O lim
s
pe
(1
s
i
ra
Sh
tio
ot
n
)
(T
C =
25
°C
)
Ta = 25°C
4
Drain Current ID (A)
Drain Current ID (A)
50
30
Drain Current ID (A)
75°C
TC= 25°C
3
2
5
Drain to Source Saturation Voltage
VDS (on) (V)
2.0
1
8
3V
2.5 V
6
2
4
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–25°C
3
1
2
4
Gate to Source Voltage VGS (V)
2
0
5
0
3.5 V
VGS = 2 V
1
10
100
0.3
3
30
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
Pulse Test
5V
4V
3
1
Typical Transfer Characteristics
4
10 V
Pulse Test
1.6
5A
1.2
0.8
2A
0.4
0
ID = 1 A
2
4
8
10
6
Gate to Source Voltage VGS (V)
4AM13
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
2
VGS = 4 V
1.0
0.5
10 V
0.2
0.1
0.05
0.2
0.5 1.0
5
2
10
Drain Current ID (A)
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.8
ID = 2 A
0.6
VGS = 4 V
5A
0.2
0
–40
2
75°C
0.5
0.2
0.1
0.05
0.1
1 A, 2 A
0
40
120
80
Case Temperature TC (°C)
160
500
VDS = 10 V
–25°C
Pulse Test
TC = 25°C
1.0
VGS = 10 V
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
Forward Transfer Admittance yfs (S)
5
1A
0.4
Forward Transfer Admittance
vs. Drain Current
10
Pulse Test
0.2
2
0.5 1.0
Drain Current ID (A)
5
200
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
100
50
20
10
5
0.2
0.5 1.0
2
5
10
Reverse Drain Current IDR (A)
20
9
4AM13
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
VGS = 0
f = 1 MHz
300
Capacitance C (pF)
Dynamic Input Characteristics
100
Ciss
Coss
100
30
Crss
10
3
20
80
16
VDD = 50 V
25 V
60
12
10 V
VDS
40
VDD = 50 V
20
25 V
10 V
VGS
ID = 2 A
8
4
1
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
0
Reverse Drain Current IDR (A)
td (off)
Switching Time t (ns)
50
10
10
5
100
tf
20
tr
10
5
td (on)
1
0.05
4
6
8
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
2
2
VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %
•
•
0.1
0.2
0.5 1.0
2
Drain Current ID (A)
5
4
3
Pulse Test
10 V
15 V
2
5V
1
0
VGS = 0, –5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
Gate to Source Voltage VGS (V)
1000
Unit: mm
26.5 ± 0.3
1.82
2.54
1
2
3
4
0.55 ± 0.1
1.4
5
6
7
10.5 ± 0.5
2.5
10.0 ± 0.3
4.0 ± 0.2
8
9
1.5 ± 0.2
+0.1
0.55 –0.06
10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-10
—
—
2.9 g
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