2SK974(L), 2SK974(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK974(L), 2SK974(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 3 A 12 A 3 A 20 W Drain peak current ID(peak)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK974(L), 2SK974(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.15 0.18 Ω ID = 2 A, VGS = 10 V * 0.20 0.25 Ω ID = 2 A, VGS = 4 V * 1 Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V * Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 230 — pF Reverse transfer capacitance Crss — 60 — pF Turn-on delay time td(on) — 5 — ns Rise time tr — 25 — ns Turn-off delay time td(off) — 180 — ns Fall time tf — 75 — ns Body to drain diode forward voltage VDF — 0.9 — V IF = 3 A, VGS = 0 Body to drain diode reverse recovery time trr — 85 — ns IF = 3 A, VGS = 0, diF/dt = 50 A/µs Note 1 1 ID = 2 A, VGS = 10 V, RL = 15 Ω 1. Pulse test 3 2SK974(L), 2SK974(S) Maximum Safe Operation Area Power vs. Temperature Derating 100 Channel Dissipation Pch (W) 30 ea 20 is ) 10 µs th (on in DS 10 n it o y R 0 PW µs ra b = pe d 10 DC O mite m il Op s( 1S er at ho ion t) (T C = Ta = 25°C 25 °C ) 10 3 s m 10 1.0 0.3 0 50 100 Case Temperature TC (°C) 0.1 0.1 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) 150 Typical Transfer Characteristics Typical Output Characteristics 10 V 5V 4V 8 Drain Current ID (A) 10 Pulse Test 3.5 V 6 3V 4 2 VDS = 10 V Pulse Test 8 Drain Current ID (A) 10 is ar 1 Drain Current ID (A) 30 6 4 2 2.5 V –25°C TC= 25°C 75°C VGS = 2 V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.8 5A 0.6 0.4 2A ID = 1 A 0.2 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 1.0 5 2 0.5 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 4 0.2 Pulse Test ID = 5 A 1 A, 2 A VGS = 4 V 5A 1 A, 2 A 0.1 0 –40 VGS = 10 V 0 40 80 120 Case Temperature TC (°C) VGS = 4 V 0.2 10 V 0.1 0.05 0.2 0.5 1.0 2 5 10 Drain Current ID (A) 20 Forward Transfer Admittance vs. Drain Current 0.4 0.3 Pulse Test 1.0 Static Drain to Source on State Resistance vs. Temperature 0.5 1 2 3 4 Gate to Source Voltage VGS (V) 160 10 VDS = 10 V 5 Pulse Test 2 –25°C TC = 25°C 75°C 1.0 0.5 0.2 0.1 0.05 0.1 2 0.2 0.5 1.0 Drain Current ID (A) 5 5 2SK974(L), 2SK974(S) Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 10000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 200 VGS = 0 f = 1 MHz 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 10 1000 Ciss 300 Coss 100 Crss 30 5 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics Dynamic Input Characteristics 16 VDD = 50 V 25 V 60 VDD = 50 V 20 25 V 10 V 0 12 10 V VDS 4 VGS ID = 3 A 8 12 16 Gate Charge Qg (nc) 8 4 0 20 td (off) 200 Switching Time t (ns) 80 40 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 100 100 tf 50 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % • • tr 20 10 5 0.1 td (on) 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 5 2SK974(L), 2SK974(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 10 V 15 V 4 5V 2 VGS = 0, –5 V 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) 0 Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 0.05 0.02 θch–c (t) = γs (t) · θch–c θch–c = 6.25°C/W, TC = 25°C 0.1 PDM D =PW T e ls 0.01 ot Pu h 1S 0.03 0.01 10 µ PW T 100µ 1m 10 m Pulse Width PW (s) 100 m 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V 6 . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 2SK974(L), 2SK974(S) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7