HITACHI 2SJ278

2SJ278
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ278
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–1
A
–4
A
–1
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “MY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–10
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.25
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
0.7
0.83
Ω
I D = –0.5 A, VGS = –10 V*1
—
0.9
1.2
Ω
I D = –0.5 A, VGS = –4 V*1
resistance
Forward transfer admittance
|yfs|
0.6
1.0
—
S
I D = –0.5 A, VDS = –10 V*1
Input capacitance
Ciss
—
160
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
80
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
28
—
pF
Turn-on delay time
t d(on)
—
7
—
ns
I D = –0.5 A, VGS = –10 V,
Rise time
tr
—
8
—
ns
RL = 60 Ω
Turn-off delay time
t d(off)
—
30
—
ns
Fall time
tf
—
25
—
ns
Body to drain diode forward
voltage
VDF
—
–1.1
—
V
I F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
90
—
ns
I F = –1 A, VGS = 0,
diF/dt = 50 A/µs
2
2SJ278
Power vs. Temperature Derating
Maximum Safe Operation Area
Drain Current
1.5
1.0
–1
50
100
150
Ambient Temperature
C
–0.3
Operation in
this area is
limited by R DS(on)
–0.1
m
s
O
(1
sh
pe
ot
ra
tio
n
)
200
Ta (°C)
–0.01 Ta = 25 °C
–0.005
–0.1 –0.3
–1
–3
–10 –30 –100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–1.0
–10 V
–6 V
–4 V
ID
–3 V
(A)
Pulse Test
–1.2
–0.8
–2.5 V
–0.4
Drain Current
I D (A)
Drain Current
–1.6
10
D
Typical Output Characteristics
–2.0
=
1
10 0 µ
0 s
µs
–0.03
0.5
0
PW
s
m
I D (A)
–5
–3
1
Channel Dissipation Pch (W)
(on the aluminam ceramic board)
2.0
–0.8
V DS = –10 V
Pulse Test
–0.6
75 °C
–0.4
Tc = –25 °C
25 °C
–0.2
VGS = –2 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ278
I D = –1 A
–0.8
-0.6
–0.5 A
-0.4
–0.2
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
4
Pulse Test
–0.2 A
–2
–4
–6
Gate to Source Voltage
–8
–10
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
–1 A
1.2
–0.5 A
–0.2 A
–1 A
VGS = –4 V
0.8
–10 V
–0.5 A
–0.2 A
0.4
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
0.05
–0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current I D (A)
–5
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–1.0
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
2
Tc = –25 °C
1
25 °C
0.5
75 °C
0.2
V DS = –10 V
Pulse Test
0.1
0.05
0
40
80
120
160
Case Temperature Tc (°C)
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current I D (A)
–0.5
–1
2SJ278
Typical Capacitance vs.
Drain to Source Voltage
Body–Drain Diode Reverse
Recovery Time
1000
Capacitance C (pF)
di/dt = 50 A/µs
VGS = 0, duty < 1 %
200
100
50
20
Ciss
100
Coss
Crss
10
VGS = 0
f = 1 MHz
10
1
5
–0.02 –0.05 –0.1 –0.2 –0.5 –1
–2
Reverse Drain Current I DR (A)
0
–40
–60
–4
ID = –1A
V DS
V DD = –10 V
–25 V
–40 V
–80
–100
0
–8
–12
V GS
–16
4
8
12
16
Gate Charge Qg (nc)
-40
–50
–20
20
V GS = –10 V, V DD = –30 V
PW = 2 µs, duty < 1 %
Switching Time t (ns)
–20
–30
500
V GS (V)
V DD = –10 V
–25 V
–40 V
–20
Switching Characteristics
0
Gate to Source Voltage
V DS (V)
0
–10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
200
100
50
tf
t d(off)
20
10
tr
t d(on)
5
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current
–0.5
–1
I D (A)
5
2SJ278
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
–1.0
Pulse Test
–10 V
–0.8
–5 V
–0.6
–0.4
V GS = 0, 5 V
–0.2
0
–0.4
–0.8
–1.2
Drain to Source Voltage
–1.6
V DS (V)
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
–2.0
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50Ω
V DD
= –30 V
Vout
td(on)
6
90%
90%
10%
10%
tr
td(off)
tf
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.