HITACHI 2SK2978

2SK2978
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-659B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R DS(on) = 0.09Ω typ. (V GS = 4 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
UPAK
3
2
1
D
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SK2978
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
2.5
A
5
A
2.5
A
1
W
Drain peak current
I D(pulse)
Note1
Body-drain diode reverse drain current I DR
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
20
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±10
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 20 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±8V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
I D = 1mA, VDS = 10V
Static drain to source on state
resistance
RDS(on)
—
0.09
0.12
Ω
I D = 1.5A, VGS = 4V Note3
Static drain to source on state
resistance
RDS(on)
—
0.12
0.20
Ω
I D = 1.5A, VGS = 2.5V Note3
Forward transfer admittance
|yfs|
3.0
5.0
—
S
I D = 1.5A, VDS = 10V Note3
Input capacitance
Ciss
—
260
—
pF
VDS = 10V
Output capacitance
Coss
—
150
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
75
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
15
—
ns
VGS = 4V, I D = 1.5A
Rise time
tr
—
70
—
ns
RL = 6.67Ω
Turn-off delay time
t d(off)
—
55
—
ns
Fall time
tf
—
70
—
ns
Body–drain diode forward voltage VDF
—
0.9
—
V
I F = 2.5A, VGS = 0
Body–drain diode reverse
recovery time
—
75
—
ns
I F = 2.5A, VGS = 0
diF/ dt =50A/µs
Note:
2
3. Pulse test
4. Marking is “ZY”
t rr
2SK2978
Main Characteristics
Power vs. Temperature Derating
I D (A)
Drain Current
m
Operation in
0.1 this area is
limited by R DS(on)
n
tio
ra
50
100
150
Ambient Temperature
0.01 Ta = 25 °C
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
200
Ta (°C)
Typical Transfer Characteristics
Typical Output Characteristics
10 V 5 V
5
3V
Pulse Test
V DS = 10 V
Pulse Test
2.5 V
(A)
4
5
4
ID
2V
3
Drain Current
I D (A)
pe
O
0.3
0.03
0
Drain Current
µs
1
10
1
C
0.5
=
1.0
10
3
D
Channel Dissipation
Test condition :
When using the alumina ceramic
board (12.5 x 20 x 0.7 mm)
Maximum Safe Operation Area
)
ot
µs
sh
0 s (1
10 m s
1.5
10
PW
Pch (W)
2.0
2
1
VGS = 1.5 V
0
2
4
6
Drain to Source Voltage
8
V DS (V)
10
3
2
1
0
75°C
25°C
Tc = –25°C
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK2978
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R DS(on) (Ω )
Drain to Source Saturation Voltage
V DS(on) (V)
1
Pulse Test
0.8
0.6
ID=5A
0.4
0.2
2.5 A
1A
Static Drain to Source on State Resistance
vs. Drain Current
1.5 A
1
Pulse Test
0.5
0.2
VGS = 2.5 V
0.1
4V
0.05
0.02
0.01
4
6
2
4
Gate to Source Voltage
8
10
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.2
2.5 A
ID=5A
0.15
2.5 V
5A
0.1
VGS = 4 V
1A
1, 2.5 A
0.05
0
–40
0.1
V GS (V)
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.5
1
Drain Current
2
5
I D (A)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) (Ω )
0
10
5
Tc = –25 °C
25 °C
2
1
75 °C
0.5
0.2
0.1
0.1
V DS = 10 V
Pulse Test
2
0.2
0.5
1
Drain Current I D (A)
5
10
2SK2978
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
50
20
10
0.1
Coss
100
Crss
30
10
3
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
2
1
5
0.2
0.5
Reverse Drain Current I DR (A)
Ciss
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
VGS = 0
f = 1 MHz
1
0
10
40
30
16
V GS
VDD = 10 V
5V
20
10
0
12
8
VDD = 10 V
5V
4
V DS
4
8
12
16
Gate Charge Qg (nc)
10
15
20
25
0
20
Switching Characteristics
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
500
Switching Time t (ns)
I D = 2.5 A
1000
V GS (V)
20
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
50
5
Drain to Source Voltage V DS (V)
200
tr
100
tf
50
t d(off)
20
10
0.1
t d(on)
0.2
1
0.5
Drain Current
2
5
I D (A)
10
5
2SK2978
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
5
4V
4
2.5 V
3
V GS = 0
2
1
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
V SD (V)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK2978
Package Dimensions
Unit: mm
4.5 ± 0.1
φ 1.0
0.53 max
0.48 max
1
2
1.5 1.5
3.0
3
0.8 min
4
1.5 ± 0.1
0.44 max
2.5 ± 0.1
4.25 max
0.4
1.8 max
0.44 max
Hitachi Code
EIAJ
JEDEC
UPAK
SC–62
–
7
Cautions
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