HITACHI 2SK291

2SK291
Silicon N-Channel Junction FET
Application
Low frequency low noise amplifier
Outline
TO-92 (2)
1. Drain
2. Source
3. Gate
3
2
1
2SK291
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
–15
V
Gate to source voltage
VGSO
–15
V
Drain current
ID
50
mA
Gate current
IG
5
mA
Channel power dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–15
—
—
V
I G = –100 µA
Gate to source breakdown
voltage
V(BR)GSO
–15
—
—
V
I G = –100 µA
Gate cutoff current
I GSS
—
—
10
nA
VGS = –7 V, VDS = 0
5
—
50
mA
VDS = 5 V, VGS = 0
1
Drain current
I DSS*
Gate to source cutoff voltage
VGS(off)
—
—
–3.0
V
VDS = 5 V, ID = 100 µA
Forward transfer admittance
|yfs|
25
45
—
mS
VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
8.5
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
—
1.2
—
nV/√Hz VDS = 5 V, ID = 5 mA, Rg = 0,
f = 100 kHz
Noise voltage referred to input en
Note:
1. The 2SK291 is grouped by I DSS as follows.
Grade
P
Q
R
S
T
I DSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
2
2SK291
Typical Output Characteristics
30
450
VDS = 5 V
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
300
150
V GS = 0
–0.1
20
–0.2
–0.3
–0.4
–0.5
–0.6
10
–0.8
0
50
100
150
Ambient Temperature Ta (°C)
0
2
4
Drain to Source Voltage VDS (V)
Forward Transfer Admittance yfs (mS)
30
VDS = 5 V
20
10
0
–2.0
–1.6
–1.2
–0.8
–0.4
Gate to Source Voltage VGS (V)
6
Forward Transfer Admittance vs.
Drain to Source Voltage
Typical Transfer Characteristics
Drain Current ID (mA)
V
0
60
50
VDS = 5 V
f = 1 kHz
40
30
20
10
0
–2.0
–1.6
–1.2
–0.8
–0.4
Gate to Source Voltage VGS (V)
0
3
2SK291
Input Capacitance vs.
Gate to Source Voltage
Noise Voltage Referred to Input vs.
Signal Source Resistance
Hz)
Noise Voltage Referred to Input en (nV/√
Input Capacitance Ciss (pF)
14
VDS = 5 V
f = 1 MHz
12
10
8
6
4
–1.0
–0.8
–0.6
–0.4
–0.2
Gate to Source Voltage VGS (V)
0
Hz)
Noise Voltage Referred to Input en (nV/√
Hz)
Noise Voltage Referred to Input en (nV/√
4
VDS = 5 V
Rg = 0
10
5
1.0
0.5
10
ID =
2m
A
5m
A
10
mA
100
10 k
1k
Frequency f (Hz)
5
VDS = 5 V
ID = 5 mA
Ta = 25°C
2
f = 120 Hz
100 kHz
1.0
0.5
4
√
KTRg
0.2
10
1k
10 k
100
Signal Source Resistance Rg (Ω)
Noise Voltage Referred to Input vs.
Drain to Source Voltage
50
2
10
1
Noise Voltage Referred
to Input vs. Frequency
20
20
100 k
20
ID = 10 mA
Rg = 0
10
5
2
1.0
f = 1 kHz
100 kHz
0.5
0.2
0.2
0.5 1.0
2
5
10 20
Drain to Source Voltage VDS (V)
2SK291
Equivalent Noise Resistance
vs. Frequency
1,000
VDS = 5 V
f = 0.5~4 MHz
500
200
100
50
20
10
1
2
5
10
20
50
Drain Current ID (mA)
100
Equivalent Noise Resistance Req (Ω)
Equivalent Noise Resistance Req (Ω)
Equivalent Noise Resistance vs.
Drain Current
70
VDS = 5 V
ID = 10 mA
60
50
40
30
20
0
1
2
3
4
Frequency f (MHz)
5
5
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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