2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –15 V Gate to source voltage VGSO –15 V Drain current ID 50 mA Gate current IG 5 mA Channel power dissipation Pch 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown voltage V(BR)GDO –15 — — V I G = –100 µA Gate to source breakdown voltage V(BR)GSO –15 — — V I G = –100 µA Gate cutoff current I GSS — — 10 nA VGS = –7 V, VDS = 0 5 — 50 mA VDS = 5 V, VGS = 0 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) — — –3.0 V VDS = 5 V, ID = 100 µA Forward transfer admittance |yfs| 25 45 — mS VDS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 8.5 — pF VDS = 5 V, VGS = 0, f = 1 MHz — 1.2 — nV/√Hz VDS = 5 V, ID = 5 mA, Rg = 0, f = 100 kHz Noise voltage referred to input en Note: 1. The 2SK291 is grouped by I DSS as follows. Grade P Q R S T I DSS 5 to 16 14 to 24 20 to 32 28 to 42 36 to 50 2 2SK291 Typical Output Characteristics 30 450 VDS = 5 V Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 300 150 V GS = 0 –0.1 20 –0.2 –0.3 –0.4 –0.5 –0.6 10 –0.8 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 Drain to Source Voltage VDS (V) Forward Transfer Admittance yfs (mS) 30 VDS = 5 V 20 10 0 –2.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) 6 Forward Transfer Admittance vs. Drain to Source Voltage Typical Transfer Characteristics Drain Current ID (mA) V 0 60 50 VDS = 5 V f = 1 kHz 40 30 20 10 0 –2.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) 0 3 2SK291 Input Capacitance vs. Gate to Source Voltage Noise Voltage Referred to Input vs. Signal Source Resistance Hz) Noise Voltage Referred to Input en (nV/√ Input Capacitance Ciss (pF) 14 VDS = 5 V f = 1 MHz 12 10 8 6 4 –1.0 –0.8 –0.6 –0.4 –0.2 Gate to Source Voltage VGS (V) 0 Hz) Noise Voltage Referred to Input en (nV/√ Hz) Noise Voltage Referred to Input en (nV/√ 4 VDS = 5 V Rg = 0 10 5 1.0 0.5 10 ID = 2m A 5m A 10 mA 100 10 k 1k Frequency f (Hz) 5 VDS = 5 V ID = 5 mA Ta = 25°C 2 f = 120 Hz 100 kHz 1.0 0.5 4 √ KTRg 0.2 10 1k 10 k 100 Signal Source Resistance Rg (Ω) Noise Voltage Referred to Input vs. Drain to Source Voltage 50 2 10 1 Noise Voltage Referred to Input vs. Frequency 20 20 100 k 20 ID = 10 mA Rg = 0 10 5 2 1.0 f = 1 kHz 100 kHz 0.5 0.2 0.2 0.5 1.0 2 5 10 20 Drain to Source Voltage VDS (V) 2SK291 Equivalent Noise Resistance vs. Frequency 1,000 VDS = 5 V f = 0.5~4 MHz 500 200 100 50 20 10 1 2 5 10 20 50 Drain Current ID (mA) 100 Equivalent Noise Resistance Req (Ω) Equivalent Noise Resistance Req (Ω) Equivalent Noise Resistance vs. Drain Current 70 VDS = 5 V ID = 10 mA 60 50 40 30 20 0 1 2 3 4 Frequency f (MHz) 5 5 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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