3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±8 V Gate 2 to source voltage VG2S ±8 V Drain current ID 25 mA Channel power dissipation Pch 100 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK290 Electrical Characteristics (Ta = 25¡C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 12 — — V I D = 200 mA, VG1S = –3 V, VG2S = –3 V Gate 1 to source breakdown voltage V(BR)G1SS ±8 — — V I G1 = ±10 mA, VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR)G2SS ±8 — — V I G2 = ±10 mA, VG1S = VDS = 0 Gate 1 cutoff current I G1SS — — ±100 nA VG1S = ±6 V, V G2S = VDS = 0 Gate 2 cutoff current I G2SS — — ±100 nA VG2S = ±6 V, V G1S = VDS = 0 Drain current I DS(on) 0.5 — 10 mA VDS = 6 V, VG1S = 0.5 V, VG2S = 3 V Gate 1 to source cutoff voltage VG1S(off) –0.6 — +0.5 V VDS = 10 V, VG2S = 3 V, I D = 100 mA Gate 2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3 V, I D = 100 mA Forward transfer admittance |yfs| 16 22 — mS VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz Input capacitance Ciss 1.2 1.8 2.2 pF VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Output capacitance Coss 0.7 1.2 1.4 pF Reverse transfer capacitance Crss — 0.02 0.03 pF Power gain PG 17 19.3 — dB Noise figure NF — 2.3 2.8 dB VDS = 4 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz Note: Marking is “ZJ–”. 3 3SK290 VG2S = 3 V I D (mA) 16 150 Drain Current 100 50 0.8 V 0.6 V 8 0.4 V 4 VG1S = 0.2V 50 100 150 200 Ambient Temperature Ta (¡C) I D (mA) 2.0 V 2.5 V 1.5 V 12 8 VG2S = 1.0 V 4 0.8 20 V DS = 6 V 16 0 0 Drain Current vs. Gate 1 to Source Voltage 3.0 V I D (mA) 1.0 V 12 20 1.6 2.4 3.2 4.0 Gate 1 to Source Voltage V G1S (V) 4 Typical Output Characteristics 1.2 V 0 Drain Current 20 200 Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 16 2 4 6 8 10 Drain to Source Voltage V DS (V) Drain Current vs. Gate 2 to Source Voltage V DS = 6 V 1.5 V 3.0 V 1.0 V 2.5 V 12 2.0 V 8 VG1S = 0.5 V 4 0 0.8 1.6 2.4 3.2 4.0 Gate 2 to Source Voltage V G2S (V) Forward Transfer Admittance vs. Gate 1 to Source Voltage Power Gain vs. Drain Current 20 30 VDS = 6 V f = 1 kHz 24 V G2S = 3.0 V PG (dB) 2.5 V 2.0 V 18 16 12 Power Gain 1.5 V 12 1.0 V 6 0 –0.5 0 0.5 1.0 8 0 2.0 1.5 VDS = 4 V VG2S = 3 V f = 900 MHz 4 4 Gate1 to Source Voltage VG1S (V) 8 Drain Current 12 16 20 I D (mA) Noise Figure vs. Drain Current NF (dB) 5 Noise Figure Forward Transfer Admittance |y fs | (mS) 3SK290 VDS = 4 V VG2S = 3 V f = 900 MHz 4 3 2 1 0 4 8 Drain Current 12 16 20 I D (mA) 5 3SK290 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 Scale: 1 / div. 90¡ 1.5 .6 60¡ 120¡ 2 .4 3 30¡ 150¡ 4 5 .2 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180¡ 0¡ –10 –5 –4 –.2 –30¡ –150¡ –3 –.4 –2 –.6 –.8 –1 –90¡ Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 W 50 to 1000 MHz (50 MHz step) Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 W 50 to 1000 MHz (50 MHz step) S22 Parameter vs. Frequency S12 Parameter vs. Frequency 90¡ .8 Scale: 0.002 / div. 1 .6 60¡ 120¡ –60¡ –120¡ –1.5 1.5 2 .4 3 30¡ 150¡ 4 5 .2 10 180¡ 0¡ .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30¡ –150¡ –3 –.4 –60¡ –120¡ –90¡ Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 W 50 to 1000 MHz (50 MHz step) 6 –2 –.6 –.8 –1 –1.5 Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 W 50 to 1000 MHz (50 MHz step) 3SK290 S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ½) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 50 0.998 –3.3 2.17 176 0.001 41.3 0.971 –1.9 100 0.994 –6.7 2.20 172 0.001 88.9 0.971 –4.5 150 0.997 –10.2 2.19 168 0.002 74.4 0.970 –7.1 200 0.991 –13.5 2.17 163 0.003 81.6 0.969 –9.8 250 0.993 –16.9 2.16 159 0.004 79.7 0.967 –12.1 300 0.980 –20.8 2.12 155 0.004 72.6 0.965 –14.8 350 0.976 –23.7 2.10 151 0.005 66.9 0.962 –17.3 400 0.971 –27.0 2.08 146 0.005 70.9 0.959 –19.7 450 0.962 –30.7 2.05 142 0.006 67.7 0.956 –22.1 500 0.955 –33.7 2.03 139 0.006 63.9 0.953 –24.8 550 0.945 –36.9 1.99 135 0.006 64.1 0.950 –27.2 600 0.939 –40.2 1.96 131 0.006 63.9 0.946 –29.5 650 0.927 –43.3 1.93 127 0.006 59.9 0.942 –32.1 700 0.925 –46.5 1.90 123 0.006 60.0 0.939 –34.6 750 0.911 –49.4 1.87 120 0.006 58.3 0.933 –36.7 800 0.901 –52.3 1.84 116 0.006 60.3 0.930 –39.1 850 0.893 –55.9 1.81 112 0.005 62.0 0.925 –41.5 900 0.881 –59.0 1.78 108 0.005 61.2 0.921 –43.8 950 0.876 –61.5 1.75 105 0.005 65.0 0.917 –46.1 1000 0.869 –64.3 1.71 102 0.005 68.8 0.913 –48.4 7 Unit: mm 0.95 0 – 0.1 0.65 0.1 0.6 +– 0.05 0.16 – 0.06 2.8 1.5 ± 0.15 + 0.1 0.4 – 0.05 + 0.1 0.65 + 0.1 0.4 – 0.05 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 — Conforms 0.013 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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