3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±10 V Gate 2 to source voltage VG2S ±10 V Drain current ID 35 mA Channel power dissipation Pch 150 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 12 — — V VG1S = VG2S = –5 V, I D = 200 µA Gate 1 to source breakdown voltage V(BR)G1SS ±10 — — V I G1 = ±10 µA, VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR) G2SS ±10 — — V I G2 = ±10 µA, VG1S = VDS = 0 Gate 1 cutoff current I G1SS — — ±100 nA VG1S = ±8 V, VG2S = VDS = 0 Gate 2 cutoff current I G2SS — — ±100 nA VG2S = ±8 V, VG1S = VDS = 0 Gate 1 to source cutoff voltage VG1S(off) +0.5 — –0.8 V VDS = 6 V, VG2S = 3V, I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) +0.5 — –0.8 V VDS = 6 V, VG1S = 3V, I D = 100 µA Drain current I DSS 0 — 4 mA VDS = 6 V, VG2S = 3V, VG1S = 0 Forward transfer admittance |yfs| 15 — — mS VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz Input capacitance Ciss — 1.7 2.2 pF VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Output capacitance Coss — 1.0 1.4 pF Reverse transfer capacitance Crss — 0.017 0.03 pF Power gain PG 16 19 — dB Noise figure NF — 3.0 4.5 dB Note: Marking is “FI–”. 2 VDS = 4 V, VG2S = 3V, I D = 10 mA, f = 900 MHz 3SK186 Typical Output Characteristics 20 300 1.2 1.4 100 mW Drain Current ID (mA) 50 200 16 1.0 12 VG2S = 3 V 0.8 8 0.6 4 0.4 0.2 VG1S = 0 V 0 0 50 100 150 Ambient Temperature Ta (°C) 16 12 VDS = 4 V 2 1.5 1.0 8 4 20 2.5 3 VG2S = 0.5 V Drain Current ID (mA) 20 2 6 10 4 8 Drain to Source Voltage VDS (V) Drain Current vs. Gate 2 to Source Voltage Drain Current vs. Gate 1 to Source Voltage Drain Current ID (mA) 1.6 =1 P ch Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 16 1.75 1.5 1.25 VDS = 4 V 1.0 12 0.75 8 0.5 4 0.25 0 –0.8 0 0.8 1.6 2.4 3.2 Gate 1 to Source Voltage VG1S (V) 0 VG1S = 0 0.8 1.6 2.4 3.2 4.0 Gate 2 to Source Voltage VG2S (V) 3 3SK186 20 VDS = 6 V Power Gain vs. Drain Current 2.5 3 2.0 16 12 1.5 8 1.0 4 20 Power Gain PG (dB) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Gate 1 to Source Voltage VG2S = 0.5 V 0 –0.4 0 0.4 0.8 1.2 1.6 Gate 1 to Source Voltage VG1S (V) 16 12 8 VDS = 4 V VG2S = 3 V f = 900 MHz 4 0 2 4 6 8 Drain Current ID (mA) Noise Figure vs. Drain Current Noise Figure NF (dB) 10 8 6 4 2 0 4 VDS = 4 V VG2S = 3 V f = 900 MHz 2 4 6 8 Drain Current ID (mA) 10 10 Unit: mm 0.95 0 – 0.1 0.65 0.1 0.6 +– 0.05 0.16 – 0.06 2.8 1.5 ± 0.15 + 0.1 0.4 – 0.05 + 0.1 0.65 + 0.1 0.4 – 0.05 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 — Conforms 0.013 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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