HITACHI 3SK186

3SK186
Silicon N-Channel Dual Gate MOS FET
Application
UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
12
V
Gate 1 to source voltage
VG1S
±10
V
Gate 2 to source voltage
VG2S
±10
V
Drain current
ID
35
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
12
—
—
V
VG1S = VG2S = –5 V,
I D = 200 µA
Gate 1 to source breakdown
voltage
V(BR)G1SS
±10
—
—
V
I G1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V(BR) G2SS
±10
—
—
V
I G2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
I G1SS
—
—
±100
nA
VG1S = ±8 V, VG2S = VDS = 0
Gate 2 cutoff current
I G2SS
—
—
±100
nA
VG2S = ±8 V, VG1S = VDS = 0
Gate 1 to source cutoff voltage VG1S(off)
+0.5
—
–0.8
V
VDS = 6 V, VG2S = 3V,
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
+0.5
—
–0.8
V
VDS = 6 V, VG1S = 3V,
I D = 100 µA
Drain current
I DSS
0
—
4
mA
VDS = 6 V, VG2S = 3V, VG1S = 0
Forward transfer admittance
|yfs|
15
—
—
mS
VDS = 6 V, VG2S = 3V,
I D = 10 mA, f = 1 kHz
Input capacitance
Ciss
—
1.7
2.2
pF
VDS = 6 V, VG2S = 3V,
I D = 10 mA, f = 1 MHz
Output capacitance
Coss
—
1.0
1.4
pF
Reverse transfer capacitance
Crss
—
0.017
0.03
pF
Power gain
PG
16
19
—
dB
Noise figure
NF
—
3.0
4.5
dB
Note: Marking is “FI–”.
2
VDS = 4 V, VG2S = 3V,
I D = 10 mA, f = 900 MHz
3SK186
Typical Output Characteristics
20
300
1.2
1.4
100
mW
Drain Current ID (mA)
50
200
16
1.0
12
VG2S = 3 V
0.8
8
0.6
4
0.4
0.2
VG1S = 0 V
0
0
50
100
150
Ambient Temperature Ta (°C)
16
12
VDS = 4 V
2
1.5
1.0
8
4
20
2.5
3
VG2S = 0.5 V
Drain Current ID (mA)
20
2
6
10
4
8
Drain to Source Voltage VDS (V)
Drain Current vs. Gate 2
to Source Voltage
Drain Current vs. Gate 1
to Source Voltage
Drain Current ID (mA)
1.6
=1
P ch
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
16
1.75
1.5
1.25
VDS = 4 V
1.0
12
0.75
8
0.5
4
0.25
0
–0.8
0
0.8
1.6
2.4
3.2
Gate 1 to Source Voltage VG1S (V)
0
VG1S = 0
0.8
1.6
2.4
3.2
4.0
Gate 2 to Source Voltage VG2S (V)
3
3SK186
20
VDS = 6 V
Power Gain vs. Drain Current
2.5
3
2.0
16
12
1.5
8
1.0
4
20
Power Gain PG (dB)
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
VG2S = 0.5 V
0
–0.4
0
0.4
0.8
1.2
1.6
Gate 1 to Source Voltage VG1S (V)
16
12
8
VDS = 4 V
VG2S = 3 V
f = 900 MHz
4
0
2
4
6
8
Drain Current ID (mA)
Noise Figure vs. Drain Current
Noise Figure NF (dB)
10
8
6
4
2
0
4
VDS = 4 V
VG2S = 3 V
f = 900 MHz
2
4
6
8
Drain Current ID (mA)
10
10
Unit: mm
0.95
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.16 – 0.06
2.8
1.5 ± 0.15
+ 0.1
0.4 – 0.05
+ 0.1
0.65
+ 0.1
0.4 – 0.05
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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