2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –30 V Gate to source voltage VGSS –1 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown voltage V(BR)GDO –30 — — V I G = –100 µA, IS = 0 Gate cutoff current I GSS — — –10 nA VGS = –0.5 V, VDS = 0 4 — 20 mA VDS = 5 V, VGS = 0 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) — — –3.0 V VDS = 5 V, ID = 10 µA Forward transfer admittance |yfs| 8 10 — mS VDS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 6.8 — pF VDS = 5 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Crss — 0.1 — pF VDS = 5 V, VGS = 0, f = 1 MHz Power gain PG — 27 — dB VDS = 5 V, VGS = 0, f = 100 MHz Noise figure NF — 1.7 — dB VDS = 5 V, VGS = 0, f = 100 MHz Note: 1. The 2SK168 is grouped by I DSS as follows. D E F 4 to 8 6 to 12 10 to 20 2 2SK168 Typical Output Characteristics (1) 10 300 VGS = 0 Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 200 100 8 h = 20 0 6 m W –0.4 4 –0.6 2 –0.8 –1.0 0 0 100 150 50 Ambient Temperature Ta (°C) Typical Output Characteristics (2) VGS = 0 VDS = 5 V Drain Current ID (mA) –0.2 V 6 –0.4 4 –0.6 0 50 Typical Transfer Characteristics 8 2 30 40 10 20 Drain to Source Voltage VDS (V) 15 10 Drain Current ID (mA) Pc –0.2 V –0.8 –1.0 3 4 1 2 Drain to Source Voltage VDS (V) 5 10 F 5 E D 0 –3.0 –2.0 –1.0 Gate to Source Voltage VGS (V) 0 3 2SK168 Ta = –25°C 25°C 10 5 0 75°C VGS = 0 f = 1 kHz 10 5 Drain to Source Voltage VDS (V) Input Capacitance vs. Drain to Source Voltage Input Capacitance Ciss (pF) 20 VGS = 0 f = 1 MHz 10 5 2 0.1 4 2 5 10 0.2 0.5 1.0 Drain to Source Voltage VDS (V) Forward Transfer Admittance yfs (mS) 15 15 Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 VDS = 5 V f = 1 kHz 1.0 0.5 0.2 5 10 0.5 1.0 2 Drain Current ID (mA) 20 Reverse Transfer Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance Crss (pF) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain to Source Voltage 5 2 VGS = 0 f = 1 MHz 1.0 0.5 0.2 0.1 0.05 0.1 2 5 0.2 0.5 1.0 Drain to Source Voltage VDS (V) 10 2SK168 Output Capacitance vs. Drain to Source Voltage Power Gain vs. Drain to Source Voltage 30 VGS = 0 f = 1 MHz 100 Power Gain PG (dB) Output Capacitance Coss (pF) 200 50 20 10 5 2 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 20 VGS = 0 f = 100 MHz 10 0 15 Noise Figure vs. Drain to Source Voltage Power Gain vs. Drain Current 8 30 F Noise Figure NF (dB) E Power Gain PG (dB) 10 5 Drain to Source Voltage VDS (V) D 20 VDS = 5 V f = 100 MHz VGS Variable 10 6 VGS = 0 f = 100 MHz 4 2 0 2 4 6 8 10 12 14 Drain Current ID (mA) 16 0 4 8 12 Drain to Source Voltage VDS (V) 16 5 2SK168 Transfer Admittance vs. Frequency Input Admittance yis (mS) Output Admittance yos (mS) 5 2 1.0 Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) Input and Output Admittance vs. Frequency gis yis = gis+jbis yos = gos+jbos VDS = 5 V ID = 10 mA bis×10 bos×10 gos 0.5 0.2 0.1 0.05 50 500 100 200 Frequency f (MHz) 50 20 VDS = 5 V ID = 10 mA gfs 10 –bfs 5 2 yfs = gfs+jbfs yrs = grs+jbfs 0.5 50 100 200 Frequency f (MHz) gis bis×10 0.5 0.2 0.1 0.05 0.5 6 Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) Input Admittance yis (mS) Output Admittance yos (mS) bos VDS = 5 V f = 100 MHz yis = gis+jbis yos = gos+jbos gos is Negligible Small at This Frequency 1.0 2 5 10 20 Drain Current ID (mA) 500 Transfer Admittance vs. Drain Current 5 1.0 10 grs 1.0 Input and Output Admittance vs. Drain Current 2 –10 brs 50 50 20 VDS = 5 V f = 100 MHz gfs 10 –bfs 5 –100 brs 2 100 grs 1.0 0.5 0.5 yfs = gfs+jbfs yrs = grs+jbrs 1.0 2 5 10 20 Drain Current ID (mA) 50 2SK168 Power Gain and Noise Figure Test Circuit Shield 5.4 50 SG Output Impedance C1 S.G. L1 3.0 D.U.T. C2 L2 4,700 50 1,000 VDD V.V Unit R : Ω C : pF C1, C2 : 0 to 30 pF Variable Air L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. 7 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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