HITACHI 2SK168

2SK168
Silicon N-Channel Junction FET
Application
VHF Amplifier, Mixer, Local oscillator
Outline
TO-92 (2)
1. Gate
2. Source
3. Drain
3
2
1
2SK168
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
–30
V
Gate to source voltage
VGSS
–1
V
Gate current
IG
10
mA
Drain current
ID
20
mA
Channel power dissipation
Pch
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–30
—
—
V
I G = –100 µA, IS = 0
Gate cutoff current
I GSS
—
—
–10
nA
VGS = –0.5 V, VDS = 0
4
—
20
mA
VDS = 5 V, VGS = 0
1
Drain current
I DSS*
Gate to source cutoff voltage
VGS(off)
—
—
–3.0
V
VDS = 5 V, ID = 10 µA
Forward transfer admittance
|yfs|
8
10
—
mS
VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
6.8
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance
Crss
—
0.1
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
Power gain
PG
—
27
—
dB
VDS = 5 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
1.7
—
dB
VDS = 5 V, VGS = 0,
f = 100 MHz
Note:
1. The 2SK168 is grouped by I DSS as follows.
D
E
F
4 to 8
6 to 12
10 to 20
2
2SK168
Typical Output Characteristics (1)
10
300
VGS = 0
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
200
100
8
h
=
20
0
6
m
W
–0.4
4
–0.6
2
–0.8
–1.0
0
0
100
150
50
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
VGS = 0
VDS = 5 V
Drain Current ID (mA)
–0.2 V
6
–0.4
4
–0.6
0
50
Typical Transfer Characteristics
8
2
30
40
10
20
Drain to Source Voltage VDS (V)
15
10
Drain Current ID (mA)
Pc
–0.2 V
–0.8
–1.0
3
4
1
2
Drain to Source Voltage VDS (V)
5
10
F
5
E
D
0
–3.0
–2.0
–1.0
Gate to Source Voltage VGS (V)
0
3
2SK168
Ta = –25°C
25°C
10
5
0
75°C
VGS = 0
f = 1 kHz
10
5
Drain to Source Voltage VDS (V)
Input Capacitance vs.
Drain to Source Voltage
Input Capacitance Ciss (pF)
20
VGS = 0
f = 1 MHz
10
5
2
0.1
4
2
5
10
0.2
0.5 1.0
Drain to Source Voltage VDS (V)
Forward Transfer Admittance yfs (mS)
15
15
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
VDS = 5 V
f = 1 kHz
1.0
0.5
0.2
5
10
0.5 1.0
2
Drain Current ID (mA)
20
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Reverse Transfer Capacitance Crss (pF)
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs.
Drain to Source Voltage
5
2
VGS = 0
f = 1 MHz
1.0
0.5
0.2
0.1
0.05
0.1
2
5
0.2
0.5 1.0
Drain to Source Voltage VDS (V)
10
2SK168
Output Capacitance vs.
Drain to Source Voltage
Power Gain vs.
Drain to Source Voltage
30
VGS = 0
f = 1 MHz
100
Power Gain PG (dB)
Output Capacitance Coss (pF)
200
50
20
10
5
2
0.1
0.2
0.5 1.0
2
5
Drain to Source Voltage VDS (V)
10
20
VGS = 0
f = 100 MHz
10
0
15
Noise Figure vs.
Drain to Source Voltage
Power Gain vs. Drain Current
8
30
F
Noise Figure NF (dB)
E
Power Gain PG (dB)
10
5
Drain to Source Voltage VDS (V)
D
20
VDS = 5 V
f = 100 MHz
VGS Variable
10
6
VGS = 0
f = 100 MHz
4
2
0
2
4
6
8
10 12 14
Drain Current ID (mA)
16
0
4
8
12
Drain to Source Voltage VDS (V)
16
5
2SK168
Transfer Admittance vs.
Frequency
Input Admittance yis (mS)
Output Admittance yos (mS)
5
2
1.0
Forward Transfer Admittance yfs (mS)
Reverse Transfer Admittance yrs (mS)
Input and Output Admittance
vs. Frequency
gis
yis = gis+jbis
yos = gos+jbos
VDS = 5 V
ID = 10 mA
bis×10
bos×10
gos
0.5
0.2
0.1
0.05
50
500
100
200
Frequency f (MHz)
50
20
VDS = 5 V
ID = 10 mA
gfs
10
–bfs
5
2
yfs = gfs+jbfs
yrs = grs+jbfs
0.5
50
100
200
Frequency f (MHz)
gis
bis×10
0.5
0.2
0.1
0.05
0.5
6
Forward Transfer Admittance yfs (mS)
Reverse Transfer Admittance yrs (mS)
Input Admittance yis (mS)
Output Admittance yos (mS)
bos
VDS = 5 V
f = 100 MHz
yis = gis+jbis
yos = gos+jbos
gos is Negligible
Small at This Frequency
1.0
2
5
10
20
Drain Current ID (mA)
500
Transfer Admittance vs.
Drain Current
5
1.0
10 grs
1.0
Input and Output Admittance
vs. Drain Current
2
–10 brs
50
50
20
VDS = 5 V
f = 100 MHz
gfs
10
–bfs
5
–100 brs
2
100 grs
1.0
0.5
0.5
yfs = gfs+jbfs
yrs = grs+jbrs
1.0
2
5
10
20
Drain Current ID (mA)
50
2SK168
Power Gain and Noise Figure
Test Circuit
Shield
5.4
50
SG Output
Impedance
C1
S.G.
L1
3.0
D.U.T.
C2
L2 4,700
50
1,000
VDD
V.V
Unit R : Ω
C : pF
C1, C2 : 0 to 30 pF Variable Air
L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
7
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.