2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –15 V Gate to source voltage VGSO –15 V Drain current ID 50 mA Gate current IG 5 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown voltage V(BR)GDO –15 — — V I G = –100 µA Gate to source breakdown voltage V(BR)GSO –15 — — V I G = –100 µA Gate cutoff current I GSS — — –10 nA VGS = –7 V, VDS = 0 5 — 50 mA VDS = 5 V, VGS = 0 (pulse) 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) — — –3.0 V VDS = 5 V, ID = 100 µA Forward transfer admittance |yfs| 25 45 — mS VDS = 5 V, VGS = 0, f = 1 kHz Note: 1. The 2SK322 is grouped by I DSS as follows. Grade P Q R S T Mark WP WQ WR WS WT I DSS 5 to 16 14 to 24 20 to 32 28 to 42 36 to 50 2 2SK322 Typical Output Characteristics 30 150 VDS = 5 V V GS = 0 Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 100 50 –0.1 20 –0.2 –0.3 –0.4 –0.5 –0.6 10 –0.8 0 0 50 100 150 Ambient Temperature Ta (°C) 2 4 Drain to Source Voltage VDS (V) Forward Transfer Admittance yfs(mS) 30 VDS = 5 V 20 10 0 –2.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) 6 Forward Transfer Admittance vs. Gate to Source Voltage Typical Transfer Characteristics Drain Current ID (mA) V 0 60 50 VDS = 5 V f = 1 kHz 40 30 20 10 0 –2.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) 0 3 2SK322 Input Capacitance vs. Gate to Source Voltage Noise Voltage Referred to Input vs. Signal Source Resistance 20 VDS = 5 V f = 1 MHz Noise Voltage Referred to Input Hz) en (nV/ √ Input Capacitance Ciss (pF) 14 12 10 8 6 4 –1.0 VDS = 5 V ID = 5 mA Ta =25°C 10 5 2 f = 120 Hz 1.0 f = 100 kHz 0.5 4 KTRg 0.2 –0.8 –0.6 –0.4 –0.2 Gate to Source Voltage VGS (V) 1 0 10 100 1k 10 k Signal Source Resistance Rg (Ω) Noise Voltage Referred to Input vs. Frequency Noise Voltage Referred to Input Hz) en (nV/ √ 50 20 10 5 2 1.0 0.5 10 4 VDS = 5 V Rg = 0 ID = 2m 5m A A 10 mA 100 1k 10 k Frequency f (Hz) 100 k 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.