HITACHI 3SK194

3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK194
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
15
V
Gate 1 to source voltage
VG1S
±10
V
Gate 2 to source voltage
VG2S
±10
V
Drain current
ID
35
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
–55 to +125
°C
2
3SK194
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
15
—
—
V
I D = 200 µA,
VG1S = VG2S = –5 V
Gate 1 to source breakdown
voltage
V(BR)G1SS
±10
—
—
V
I G1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V(BR)G2SS
±10
—
—
V
I G2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
I G1SS
—
—
±100
nA
VG1S = ±8 V, V G2S = VDS = 0
Gate 2 cutoff current
I G2SS
—
—
±100
nA
VG2S = ±8 V, V G1S = VDS = 0
Gate 1 to source cutoff voltage VG1S(off)
—
—
–1.0
V
VDS = 10 V, VG2S = 3 V,
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
—
—
–1.5
V
VDS = 10 V, VG1S = 3 V,
I D = 100 µA
Drain current
I DSS
0
—
10
mA
VDS = 6 V, VG1S = 0, VG2S = 3 V
Forward transfer admittance
|yfs|
17
—
—
mS
VDS = 6 V, VG2S = 3 V,
I D = 10 mA, f = 1 kHz
Input capacitance
Ciss
—
2.8
3.5
pF
VDS = 6 V, VG2S = 3 V,
I D = 10 mA, f = 1 MHz
Output capacitance
Coss
—
1.8
2.5
pF
Reverse transfer capacitance
Crss
—
0.02
—
pF
Power gain
PG
12
15
—
dB
Noise figure
NF
—
3.0
4.5
dB
Noise figure
NF
—
3.0
4.0
dB
VDD = 12 V, VAGC = 10.5 V,
f = 60 MHz
Power gain
PG
27
30
—
dB
VDS = 6 V, VG2S = 3 V,
I D = 10 mA, f = 200 MHz
Noise figure
NF
—
1.0
2.5
dB
VDS = 6 V, VG2S = 3 V,
I D = 10 mA, f = 900 MHz
Note: Marking is “IY–”.
3
3SK194
Typical Output Characteristics
20
300
0.6
200
100
0
16
4
16
2 1.5
12
0.5
8
4
0
–1
VG2S = 0 V
0
1
2
3
4
Gate 1 to Source Voltage VG1S (V)
2
4
6
8
10
Drain to Source Voltage VDS (V)
20
VDS = 6 V
1
VG1S = 0
Drain Current vs. Gate 2 to
Source Voltage
1.5
Drain Current ID (mA)
Drain Current ID (mA)
20
0.2
8
0
50
100
150
Ambient Temperature Ta (°C)
0.4
12
Drain Current vs. Gate 1 to
Source Voltage
4
VG2S = 3 V
0.8
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
VDS = 6 V
1
16
0.5
12
8
4
0
–1
VG1S = 0 V
0
1
2
3
4
Gate 2 to Source Voltage VG2S (V)
3SK194
30
Power Gain vs. Drain Current
Power Gain PG (dB)
24
18
3
12
2.5
6
2
=0
2S
V
0
–1
50
VDS = 6 V
f = 1 kHz
VG
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
40
30
20
10
1.5
1
0.5
0
1
2
3
4
Gate 1 to Source Voltage VG1S (V)
0
Power Gain vs. Drain Current
Power Gain PG (dB)
Power Gain PG (dB)
20
50
16
12
8
0
4
8
12
16
Drain Current ID (mA)
Power Gain vs. Drain to Source Voltage
20
4
VDS = 6 V
VG2S = 3 V
f = 200 MHz
VDS = 6 V
VG2S = 3 V
f = 900 MHz
4
8
12
16
Drain Current ID (mA)
20
40
VG2S = 3 V
ID = 10 mA
f = 200 MHz
30
20
10
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
5
3SK194
Power Gain vs. Drain to Source Voltage
Noise Figure vs. Drain Current
16
5
VG2S = 3 V
ID = 10 mA
f = 900 MHz
12
8
4
0
Noise Figure NF (dB)
Power Gain PG (dB)
20
4
8
12
16
20
Drain to Source Voltage VDS (V)
4
3
2
1
0
6
20
5
VDS = 6 V
VG2S = 3 V
f = 900 MHz
6
4
2
4
8
12
16
Drain Current ID (mA)
20
Noise Figure NF (dB)
Noise Figure NF (dB)
10
0
4
8
12
16
Drain Current ID (mA)
Noise Figure vs.
Drain to Source Voltage
Noise Figure vs. Drain Current
8
VDS = 6 V
VG2S = 3 V
f = 200 MHz
4
VG2S = 3 V
ID = 10 mA
f = 200 MHz
3
2
1
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
3SK194
Noise Figure vs.
Drain to Source Voltage
Noise Figure NF (dB)
10
8
VG2S = 3 V
ID = 10 mA
f = 900 MHz
6
4
2
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
7
Unit: mm
0.95
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.16 – 0.06
2.8
1.5 ± 0.15
+ 0.1
0.4 – 0.05
+ 0.1
0.65
+ 0.1
0.4 – 0.05
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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