HITACHI HAT2027R

HAT2027R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-458 E (Z)
6th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP–8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2027R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
7
A
56
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
7
A
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
20
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 12
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 10 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.03
0.038
Ω
I D = 4 A, VGS = 4 V Note4
resistance
RDS(on)
—
0.038
0.053
Ω
I D = 4 A, VGS = 2.5 V Note4
Forward transfer admittance
|yfs|
9
14
—
S
I D = 4 A, VDS = 10 V Note4
Input capacitance
Ciss
—
720
—
pF
VDS = 10 V
Output capacitance
Coss
—
450
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
185
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
28
—
ns
VGS = 4 V, ID = 4 A
Rise time
tr
—
145
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
100
—
ns
Fall time
tf
—
125
—
ns
Body–drain diode forward voltage
VDF
—
0.9
1.4
V
IF = 7 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
60
—
ns
IF = 7 A, VGS = 0
diF/ dt = 20 A/µs
Note:
2
4. Pulse test
HAT2027R
Main Characteristics
Power vs. Temperature Derating
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
10
Drain Current
2
ive
Dr
1
Op
Dr
er
ion
Op
at
ive
1.0
er
Channel Dissipation
3
2.0
0
50
at
ion
100
150
200
Ta (°C)
10 µs
100 µs
DC
PW
Op
er
1
1m
=
at
ion
(P
W
Operation in
0.3 this area is
limited by R DS(on)
0.1
0.03
Ambient Temperature
Maximum Safe Operation Area
30
I D (A)
Pch (W)
4.0
s
10
ms
< Note
10 5
s)
Ta = 25 °C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
Pulse Test
4V
5V
4.5 V
3.5 V
30
3V
20
2.5 V
10
2V
(A)
6V
ID
40
10V
Typical Transfer Characteristics
50
Drain Current
Drain Current
I D (A)
50
40
V DS = 10 V
Pulse Test
–25°C
30
25°C
Tc = 75°C
20
10
VGS = 1.5 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2027R
Static Drain to Source on State Resistance
vs. Drain Current
0.3
0.4
0.2
ID=5A
Pulse Test
0.2
0.1
VGS = 2.5 V
0.1
4V
0.02
2A
1A
0.01
0.005
2
4
6
Gate to Source Voltage
8
10
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I D = 1 A, 2 A, 5 A
0.06
V GS = 2.5 V
0.04
1 A, 2 A, 5 A
0.02
0
–40
0.2
V GS (V)
4V
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0.5
0.05
0
4
Pulse Test
Drain to Source On State Resistance
R DS(on) ( Ω )
V DS(on) (V)
0.5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
0.5
1
2
Drain Current
5
10
I D (A)
20
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
20
25 °C
10
5
75 °C
2
1
0.5
0.2
V DS = 10 V
Pulse Test
0.5
1
2
5
Drain Current I D (A)
10
20
HAT2027R
Body–Drain Diode Reverse
Recovery Time
10000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
10
VGS = 0
f = 1 MHz
3000
Ciss
1000
Coss
300
Crss
100
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
10
5
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
0
20
10
0
6
V DS
V GS
V DD = 20 V
10 V
5V
4
8
12
16
Gate Charge Qg (nc)
12
16
20
4
2
0
20
50
Pulse Test
Reverse Drain Current I DR (A)
30
V GS (V)
8
V DD = 5 V
10 V
20 V
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
10
I D= 7 A
40
8
Reverse Drain Current vs.
Souece to Drain Voltage
Dynamic Input Characteristics
50
4
Drain to Source Voltage V DS (V)
40
30
V GS = 5 V
0, –5 V
20
10
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
5
HAT2027R
Switching Characteristics
Switching Time t (ns)
500
tr
200
tf
100
t d(off)
50
t d(on)
20
10
V GS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
5
0.2
0.5
1
2
Drain Current
5
10
I D (A)
Switching Time Test Circuit
20
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
HAT2027R
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 125 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
lse
0.001
PDM
u
tp
D=
ho
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γ s (t)
10
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.001
PDM
e
t
ho
1s
ls
pu
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
7
HAT2027R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
8
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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