HITACHI 2SK3000

2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-585 (Z)
1st. Edition
December 1997
Features
• Low on-resistance
R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA)
• 4V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
MPAK
3
1
D
3
2
2
1. Source
2. Gate
3. Drain
G
S
1
2SK3000
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
40
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1.0
A
4.0
A
1.0
A
400
mW
Drain peak current
I D(pulse)
Reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt )
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
40
—
60
V
I D = 100µA, VGS = 0
Drain to source voltage
VDS(SUS)
40
—
—
V
L = 100µH, I D = 3 A
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current I DSS
—
—
1.0
µA
VDS = 40 V, VGS = 0
Gate to source leak current
—
—
±5
µA
VGS = ±6.5V, VDS = 0
Gate to source cutoff voltage VGS(off)
1.1
—
2.1
V
I D = 10µA, VDS = 5V
Static drain to source on state RDS(on)
resistance
—
0.3
0.5
Ω
I D = 450 mA
Static drain to source on state RDS(on)
resistance
—
0.25
0.3
Ω
I D = 450 mA
VGS = 10V Note3
Forward transfer admittance
|yfs|
0.5
1.2
—
S
I D = 450 mA
VDS = 10V Note3
Input capacitance
Ciss
—
14.0
—
pF
VDS = 10V
Output capacitance
Coss
—
68
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
3.0
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
0.12
—
µs
VGS = 4V, I D = 450 mA
Rise time
tr
—
0.6
—
µs
RL = 22Ω
Turn-off delay time
t d(off)
—
1.7
—
µs
Fall time
tf
—
1.4
—
µs
Note:
2
3. Pulse test
4. Marking is “ZY”.
I GSS
VGS = 4V Note3
2SK3000
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
5
0.8
50 µs
s
(1
)
ot
sh
tio
ra
pe
Operation in
this area is
limited by R DS(on)
5
I D (A)
0.01
te
No
n
Drain Current
s
m
0.1
0.02
s
m
m
0
10
0.2
O
Channel Dissipation
1
10
=
0.2
0.5
0.05
m
s
DC
0.4
1
1
PW
Pch (W)
0.
0.6
2
Ta = 25 °C
0
50
100
150
Ambient Temperature
0.05
0.2
200
0.5
1
2
5
10 20
Drain to Source Voltage
Ta (°C)
50 100 200
V DS (V)
Note5 : When using the glass epoxy board
(10mm x 10mm x 1mm t)
Typical Transfer Characteristics
Typical Output Characteristics
10
10 V 6 V
5V
Pulse Test
4.0
I D (A)
4V
4.5 V
3.0
3.5 V
Drain Current
Drain Current
I D (A)
5.0
2.0
1.0
3V
1
25°C
100m
125°C
Tc = –25°C
10m
1m
V DS = 5 V
Pulse Test
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
8
V DS (V)
10
100µ
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK3000
0.8
0.6
0.4
Static Drain to Source on State Resistance
R DS(on) ( Ω)
ID=2A
0.2
1A
4
8
12
16
I D = 0.45 A
0.3
VGS = 4 V
0.2
0.1
0
–40
3
1
0.3
VGS = 4 V
0.1
10 V
0.01
0.01 0.03
20
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.4
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
0.03
0.45 A
0
4
Pulse Test
0.45 A
10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
0.1
1
0.3
3
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
1.0
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
5
Tc = –25 °C
2
25 °C
1
75 °C
0.5
0.2
0.1
0.1
V DS = 10 V
Pulse Test
0.2
0.5 1
2
5
Drain Current I D (A)
10
2SK3000
Typical Capacitance vs.
Drain to Source Voltage
500
VGS = 0
f = 1 MHz
200
100
Coss
20
Ciss
10
5
8
12
500
200
t d(on)
50
0.05 0.1
1
4
tr
100
2
0
tf
1000
50
Crss
16
20
Drain to Source Voltage V DS (V)
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
0.2
0.5
Drain Current
1
2
I D (A)
5
Reverse Drain Current vs.
Source to Drain Voltage
Drain to Source DiodeReverse Surge
Destruction Characteristics
5
500
Ta = 25°C
1 shot
200
Reverse Drain Current I DR (A)
Applied Power Ps (W)
t d(off)
2000
Switching Time t (ns)
Capacitance C (pF)
Switching Characteristics
5000
100
50
20
10
5
0.05 0.1 0.2 0.5 1
2
5 10 20
Surge Pulse Width PW (mS)
50
10 V
5V
V GS = 0
4
3
2
1
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
5
2SK3000
Transient Thermal Resistance
1000
Thermal Resistance θ j–a (°C/W)
300
100
30
10
Condition :
Ta = 25°C
When using the glass epoxy board
(10mm x 10mm x 1mmt )
3
1
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
100
1000
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK3000
Package Dimensions
1.9
+ 0.2
2.8 – 0.6
0 ~ 0.15
0.65 – 0.3
0.95
0.95
+ 0.10
0.16 – 0.06
+ 0.1
1.5
0.65 – 0.3
+ 0.10
0.4 – 0.05
+ 0.1
Unit: mm
+ 0.3
1.1– 0.1
+ 0.2
0.3
2.8 – 0.1
MPAK
Hitachi Code
SC–59A
EIAJ
TO–236Mod.
JEDEC
7
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