HITACHI HAT2028R

HAT2028R/HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-524C (Z)
4th. Edition
February 1999
Features
•
•
•
•
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
SOP–8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2028R/HAT2028RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
4
A
32
A
4
A
—
—
4
A
—
—
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
HAT2028R
I AP
Note1
Note4
HAT2028RJ
Avalanche energy
HAT2028R
EAR
Note4
HAT2028RJ
1.37
mJ
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
2
1.
2.
3.
4.
PW ≤ 10µs, duty cycle ≤ 1 %
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Value at Tch=25°C, Rg≥50Ω
HAT2028R/HAT2028RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdownvoltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdownvoltage
V(BR)GSS
± 20
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 16 V, VDS = 0
VDS = 60 V, VGS = 0
Zero gate voltage
HAT2028R
I DSS
—
—
1
µA
drain current
HAT2028RJ I DSS
—
—
0.1
µA
Zero gate voltage
HAT2028R
I DSS
—
—
—
µA
VDS = 48 V, VGS = 0
drain current
HAT2028RJ I DSS
—
—
10
µA
Ta = 125°C
Gate to source cutoff voltage
VGS(off)
1.3
—
2.3
V
VDS = 10 V, I D = 1 mA
Static drain to source on state resistance
RDS(on)
—
0.08
0.1
Ω
I D = 2 A, VGS = 10 V Note5
RDS(on)
—
0.12
0.16
Ω
I D = 2 A, VGS = 4 V Note5
Forward transfer admittance
|yfs|
3.3
5
—
S
I D = 2 A, VDS = 10 V Note5
Input capacitance
Ciss
—
280
—
pF
VDS = 10 V
Output capacitance
Coss
—
150
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
55
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
15
—
ns
VGS = 4 V, ID = 2 A
Rise time
tr
—
100
—
ns
VDD ≅ 30 V
Turn-off delay time
t d(off)
—
35
—
ns
Fall time
tf
—
45
—
ns
Body–drain diode forwardvoltage
VDF
—
0.88
1.15
V
IF = 4 A, VGS = 0 Note5
Body–drain diode reverse recovery time
t rr
—
40
—
ns
IF = 4 A, VGS = 0
diF/ dt = 50 A/µs
Note:
5. Pulse test
3
HAT2028R/HAT2028RJ
Main Characteristics
Power vs. Temperature Derating
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
Drain Current
ive
Dr
Op
er
ion
ive
at
0
Dr
er
1.0
Op
Channel Dissipation
2
1
50
at
ion
100
150
Ambient Temperature
200
Ta (°C)
10 µs
10
0µ
s
10
3
2.0
Maximum Safe Operation Area
30
I D (A)
Pch (W)
4.0
DC
0.1
Op
er
1
0.3
PW
1m
=
ati
Operation in
this area is
limited by R DS(on)
on
(P
W
s
10
ms
N
< ote
10 6
s)
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
20
Typical Output Characteristics
10V 8 V
4.5 V
(A)
12
4V
ID
16
8
3.5 V
3V
4
Pulse Test
0
4
5V
Drain Current
Drain Current
I D (A)
6V
Typical Transfer Characteristics
20
16
–25°C
Tc = 75°C
12
25°C
8
4
V DS = 10 V
Pulse Test
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
8
V DS (V)
10
2
4
6
Gate to Source Voltage
10
8
V GS (V)
HAT2028R/HAT2028RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.3
0.2
ID=2A
2
4
6
Gate to Source Voltage
8
0.15
10
0.05
0
–40
VGS = 4 V
0.1
0.01
0.1
V GS (V)
I D = 0.5, 1, 2 A
VGS = 4 V
0.10
0.2
10 V
0.02
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.5
0.05
1A
0.5 A
0.1
0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Drain to Source On State Resistance
R DS(on) ( Ω )
Pulse Test
0.4
0.5, 1, 2 A
10 V
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.5
1
Drain Current
2
5
I D (A)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
20
10
5
2
Tc = –25 °C
25 °C
75 °C
1
0.5
0.2
0.2
V DS = 10 V
Pulse Test
1
0.5
2
5
10
Drain Current I D (A)
20
5
HAT2028R/HAT2028RJ
Body–Drain Diode Reverse
Recovery Time
1000
200
100
50
20
Coss
100
50
20
di/dt = 50 A/µs
V GS = 0, Ta = 25°C
10
0
40
20
0
V DS
V DD = 10 V
25 V
50 V
12
V GS
8
V DD = 50 V
25 V
10 V
2
4
6
8
Gate Charge Qg (nc)
4
0
10
V GS (V)
16
Switching Time t (ns)
60
I D= 4 A
1000
Gate to Source Voltage
V DS (V)
80
20
10
20
30
40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
Drain to Source Voltage
Ciss
200
Crss
10
5
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
6
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
300
tr
100
tf
30
t d(off)
t d(on)
10
3
V GS = 4 V, V DD = 30 V
PW = 3 µs, duty < 1 %
1
0.1 0.2
0.5
1
2
5
Drain Current I D (A)
10
HAT2028R/HAT2028RJ
Reverse Drain Current vs.
Souece to Drain Voltage
Maximun Avalanche Energy vs.
Channel Temperature Derating
Repetive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
20
16
V GS = 5 V
0, –5 V
12
8
4
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
2.5
I AP = 4 A
V DD = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50 Ω
2.0
1.5
1.0
0.5
0
25
50
V SD (V)
Avalanche Test Circuit
V DS
Monitor
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2028R/HAT2028RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 125 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
e
uls
p
ot
PDM
h
0.001
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γ s (t)
10
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
0.5
0.2
0.1
0.01
0.1
0.05
0.02
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
0.001
t
ho
lse
pu
PDM
D=
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
8
10
100
1000
10000
HAT2028R/HAT2028RJ
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
9
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.