HITACHI HAT2044R

HAT2044R
Silicon N Channel Power MOS FET
Power Switching
ADE-208-722A (Z)
2nd Edition
February 1999
Features
•
•
•
•
Capable of 2.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R DS(on) = 6.5 mΩ typ (at VGS = 4.5V)
Outline
SOP–8
8
5 6 7 8
D D D D
4
G
5
7 6
3
1 2
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT2044R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
15
A
120
A
15
A
2.5
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
± 0.1
µA
VGS = ±12 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
6.5
9.0
mΩ
I D = 8 A, VGS = 4.5 V Note3
resistance
RDS(on)
—
7.0
9.5
mΩ
I D = 8 A, VGS = 4.0 V Note3
RDS(on)
—
9.0
13.0
mΩ
I D = 8 A, VGS = 2.5 V Note3
Forward transfer admittance
|yfs|
24
40
—
S
I D = 8 A, VDS = 10 V Note3
Input capacitance
Ciss
—
3420
—
pF
VDS = 10 V
Output capacitance
Coss
—
950
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
480
—
pF
f = 1 MHz
Total gate charge
Qg
—
48
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
32
—
nc
VGS = 4 V
Gate to drain charge
Qgd
—
16
—
nc
I D = 15 A
Turn-on delay time
t d(on)
—
45
—
ns
VGS = 4 V, ID = 8 A
Rise time
tr
—
285
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
470
—
ns
Fall time
tf
—
360
—
ns
Body–drain diode forward voltage
VDF
—
0.85
1.1
V
IF = 15 A, VGS = 0 Note3
Body–drain diode reverse
recovery time
t rr
—
45
—
ns
IF = 15 A, VGS = 0
diF/ dt = 20 A/ µs
Note:
2
3. Pulse test
HAT2044R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
I D (A)
500
2.0
1.0
10 µs
10
0µ
s
100
10
Drain Current
Channel Dissipation
Pch (W)
4.0
DC
PW
Op
era
tio
1
0.1
n(
Operation in
this area is
limited by R DS(on)
1m
s
0m
s
=1
PW
< 1Note
0s 4
)
Ta = 25 °C
1 shot Pulse
0
50
100
150
Ambient Temperature
200
Ta (°C)
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
Typical Transfer Characteristics
50
Pulse Test
V DS = 10 V
Pulse Test
(A)
40
ID
2.0 V
30
20
VGS = 1.5 V
10
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Drain Current
Drain Current
I D (A)
4V
40
30
25°C
20
10
0
Tc = 75°C
–25°C
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2044R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0.16
0.08
5A
0.04
2A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
4
I D = 10 A
2
4
6
Gate to Source Voltage
8
10
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
2.5 V
V GS = 4 V
8
4
0
–40
2 A, 5 A, 10 A
4.5 V
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
2 A, 5 A, 10 A
0
40
80
120
160
Case Temperature Tc (°C)
20
2.5 V
10
5
VGS = 4 V
4.5 V
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
30
Tc = –25 °C
10
75 °C
3
25 °C
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I D (A)
100
HAT2044R
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Ciss
50
20
300
30
0
8
6
V DS
V GS
20
10
0
4
V DD = 20 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
2
0
100
10
20
30
40
50
Drain to Source Voltage V DS (V)
Switching Characteristics
1000
V GS (V)
10
V DD = 5 V
10 V
20 V
VGS = 0
f = 1 MHz
10
Gate to Source Voltage
40
Crss
100
5 10 20
I DR (A)
I D = 15 A
Coss
30
Dynamic Input Characteristics
50
V DS (V)
1000
di/dt = 20 A/µs
VGS = 0, Ta = 25°C
10
0.1 0.2
0.5 1
2
Reverse Drain Current
Drain to Source Voltage
3000
t d(off)
500
Switching Time t (ns)
Reverse Recovery Time trr (ns)
100
tf
200
100
tr
50
t d(on)
20 V GS = 4 V, V DS = 10 V
RG = 50 Ω , duty < 1 %
10
0.1 0.2
0.5 1
2
5 10
Drain Current I D (A)
20
5
HAT2044R
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
50
40
V GS = 0
30
20
5V
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
PDM
lse
0.001
u
tp
D=
o
1sh
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
6
10
100
1000
10000
HAT2044R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DS
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2044R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
8
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
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contact Hitachi’s sales office before using the product in an application that demands especially high
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