HAT2064R Silicon N Channel Power MOS FET Power Switching ADE-208-930G (Z) 8th. Edition May 2000 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.0 mΩ typ (at VGS = 10V) Outline SOP-8 8 5 6 7 8 D D D D 4 G 5 7 6 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2064R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ± 20 V Drain current ID 16 A 128 A 16 A 2.5 W 50 °C/W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel to Ambient Thermal Impedance θch-a Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C Note: 2 Note2 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s HAT2064R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ± 20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ± 10 µA VGS = ±16 V, V DS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 5.0 6.3 mΩ I D = 8 A, VGS = 10 V Note3 resistance RDS(on) — 7.0 10 mΩ I D = 8 A, VGS = 4.5 V Note3 Forward transfer admittance |yfs| 18 30 — S I D = 8 A, VDS = 10 V Note3 Input capacitance Ciss — 2200 — pF VDS = 10 V Output capacitance Coss — 600 — pF VGS = 0 Reverse transfer capacitance Crss — 330 — pF f = 1 MHz Total gate charge Qg — 40 — nc VDD = 10 V Gate to source charge Qgs — 6 — nc VGS = 10 V Gate to drain charge Qgd — 8 — nc I D = 16 A Turn-on delay time t d(on) — 20 — ns VGS = 10 V, ID = 8 A Rise time tr — 35 — ns VDD ≈ 10 V Turn-off delay time t d(off) — 60 — ns RL = 1.25 Ω Fall time tf — 16 — ns Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.9 1.17 V IF = 16 A, VGS = 0 Note3 Body–drain diode reverse recovery time t rr — 50 — ns IF = 16 A, VGS = 0 diF/ dt = 50 A/ µs Note: 3. Pulse test 3 HAT2064R Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 3.0 2.0 1.0 0 10 µs I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 100 10 Drain Current Channel Dissipation Pch (W) 4.0 50 100 Ambient Temperature 150 200 Ta (˚C) 10 DC PW 0µ s 1m s =1 0m Op era s tio n( 1 Operation in this area is limited by R DS(on) 0.1 PW < 1Note 0s 4 ) Ta = 25 ˚C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 10V V DS = 10 V Pulse Test Pulse Test (A) 40 4.5 V ID I D (A) 3.5 V Drain Current Typical Transfer Characteristics 50 30 3V 20 10 Drain Current 50 40 30 20 25˚C Tc = 75˚C -25˚C 10 VGS = 2.5 V 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) HAT2064R Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 0.16 0.08 I D = 10 A 0.04 Static Drain to Source on State Resistance R DS(on) (m Ω) 0 5A 2A 4 8 12 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 2 A, 5 A, 10 A 12 8 V GS = 4.5 V 2 A, 5 A, 10 A 4 10 V 0 -40 Drain to Source On State Resistance R DS(on) (m Ω) 0.12 Pulse Test 0 40 80 120 160 Case Temperature Tc (˚C) 20 10 VGS = 4.5 V 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) V DS(on) (V) 0.20 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 Tc = -25 ˚C 30 75 ˚C 10 25 ˚C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 HAT2064R Body Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 3000 1000 Coss 300 Crss 100 30 di/dt = 50 A/µs VGS = 0, Ta = 25°C 10 0.5 1 2 0.1 0.2 Reverse Drain Current Ciss VGS = 0 f = 1 MHz 10 5 10 20 I DR (A) 0 10 10 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 100 Switching Time t (ns) 8 V GS (V) 30 V DD = 25 V 10 V 12 5V Gate to Source Voltage V DS (V) Drain to Source Voltage V GS 20 50 Switching Characteristics 16 V DS 40 200 20 40 0 6 I D = 16 A 30 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 20 t d(off) 50 tr 20 t d(on) tf 10 5 V GS = 10 V , VDS = 10 V Rg = 4.7 Ω, duty < 1 % 2 0.1 0.2 0.5 1 2 Drain Current 5 10 I D (A) 20 HAT2064R Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current I DR (A) 50 40 30 10 V V GS = 0 5V 20 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.01 0.2 0.1 0.05 θ ch - f(t) = γ s (t) x θ ch - f θ ch - f = 83.3 ˚C/W, Ta = 25 ˚C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 PDM e 0.001 ot 1sh ls pu D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 7 HAT2064R Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Rg 90% D.U.T. RL Vin Vin 10 V V DS = 10 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf HAT2064R Package Dimensions Unit: mm 1 4 6.2 Max 0.25 Max 5 1.75 Max 8 4.0 Max 5.0 Max 0 - 8˚ 0.51 Max 0.25 Max 1.27 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA MS-012AA 9 HAT2064R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 10