HITACHI HAT2064R

HAT2064R
Silicon N Channel Power MOS FET
Power Switching
ADE-208-930G (Z)
8th. Edition
May 2000
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R DS(on) = 5.0 mΩ typ (at VGS = 10V)
Outline
SOP-8
8
5 6 7 8
D D D D
4
G
5
7 6
3
1 2
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT2064R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
16
A
128
A
16
A
2.5
W
50
°C/W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel to Ambient Thermal
Impedance
θch-a
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
2
Note2
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
HAT2064R
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
± 20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ±16 V, V DS = 0
Zero gate voltege drain
current
I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on)
—
5.0
6.3
mΩ
I D = 8 A, VGS = 10 V Note3
resistance
RDS(on)
—
7.0
10
mΩ
I D = 8 A, VGS = 4.5 V Note3
Forward transfer admittance
|yfs|
18
30
—
S
I D = 8 A, VDS = 10 V Note3
Input capacitance
Ciss
—
2200
—
pF
VDS = 10 V
Output capacitance
Coss
—
600
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
330
—
pF
f = 1 MHz
Total gate charge
Qg
—
40
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
6
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
8
—
nc
I D = 16 A
Turn-on delay time
t d(on)
—
20
—
ns
VGS = 10 V, ID = 8 A
Rise time
tr
—
35
—
ns
VDD ≈ 10 V
Turn-off delay time
t d(off)
—
60
—
ns
RL = 1.25 Ω
Fall time
tf
—
16
—
ns
Rg = 4.7 Ω
Body–drain diode forward
voltage
VDF
—
0.9
1.17
V
IF = 16 A, VGS = 0 Note3
Body–drain diode reverse
recovery time
t rr
—
50
—
ns
IF = 16 A, VGS = 0
diF/ dt = 50 A/ µs
Note:
3. Pulse test
3
HAT2064R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
3.0
2.0
1.0
0
10 µs
I D (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
100
10
Drain Current
Channel Dissipation
Pch (W)
4.0
50
100
Ambient Temperature
150
200
Ta (˚C)
10
DC
PW
0µ
s
1m
s
=1
0m
Op
era
s
tio
n(
1 Operation in
this area is
limited by R DS(on)
0.1
PW
< 1Note
0s 4
)
Ta = 25 ˚C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10V
V DS = 10 V
Pulse Test
Pulse Test
(A)
40
4.5 V
ID
I D (A)
3.5 V
Drain Current
Typical Transfer Characteristics
50
30
3V
20
10
Drain Current
50
40
30
20
25˚C
Tc = 75˚C
-25˚C
10
VGS = 2.5 V
0
4
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
HAT2064R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0.16
0.08
I D = 10 A
0.04
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
5A
2A
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
8
V GS = 4.5 V
2 A, 5 A, 10 A
4
10 V
0
-40
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
0
40
80
120
160
Case Temperature Tc (˚C)
20
10
VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = -25 ˚C
30
75 ˚C
10
25 ˚C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
5
HAT2064R
Body Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
3000
1000
Coss
300
Crss
100
30
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
10
0.5 1
2
0.1 0.2
Reverse Drain Current
Ciss
VGS = 0
f = 1 MHz
10
5 10 20
I DR (A)
0
10
10
V DD = 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
4
0
100
100
Switching Time t (ns)
8
V GS (V)
30
V DD = 25 V
10 V 12
5V
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
V GS
20
50
Switching Characteristics
16
V DS
40
200
20
40
0
6
I D = 16 A
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
t d(off)
50
tr
20
t d(on)
tf
10
5
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
2
0.1 0.2
0.5 1
2
Drain Current
5 10
I D (A)
20
HAT2064R
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
50
40
30
10 V
V GS = 0
5V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch - f(t) = γ s (t) x θ ch - f
θ ch - f = 83.3 ˚C/W, Ta = 25 ˚C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
PDM
e
0.001
ot
1sh
ls
pu
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
7
HAT2064R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
HAT2064R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 - 8˚
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
Hitachi code
EIAJ
JEDEC
FP-8DA
MS-012AA
9
HAT2064R
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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