P48N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 (D PAK) D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 14mΩ 52A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current 1 2 Repetitive Avalanche Energy VGS ±20 V 52 35 156 IAR 33 L = 0.1mH EAS 250 L = 0.05mH EAR 8.6 TC = 25 °C Power Dissipation UNITS IDM Avalanche Current Avalanche Energy LIMITS ID TC = 100 °C Pulsed Drain Current SYMBOL Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) mJ 45 PD TC = 100 °C A W 25 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.5 Junction-to-Ambient RθJA 65 Case-to-Heatsink RθCS UNITS °C / W 0.7 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TC = 125 °C 250 Drain-Source Breakdown Voltage Gate Threshold Voltage 1 V 1.6 3 nA µA JUL-11-2001 P48N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM 1 On-State Drain Current ID(ON) Drain-Source On-State 1 Resistance RDS(ON) 1 Forward Transconductance VDS = 10V, VGS = 10V gfs TO-252 (D PAK) 60 A VGS = 4.5V, ID = 21A 16 20 VGS = 10V, ID = 26A 11 14 VDS = 10V, ID = 26A 32 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge 2 2 Gate-Source Charge 2 Gate-Drain Charge 2 1000 Crss 350 500 Qg 35 60 Qgs VDS = 10V, VGS = 10V, 8 Qgd ID = 52A 5 td(on) 2 tr td(off) 2 Turn-Off Delay Time 2 Fall Time VGS = 0V, VDS = 15V, f = 1MHz 600 Turn-On Delay Time Rise Time 1200 1800 nC 6 16 VDS = 15V, RL = 1Ω 120 250 ID ≅ 52A, VGS = 10V, RGEN = 24Ω 40 90 105 200 tf pF nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current 3 1 Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS 52 ISM 156 VSD IS = 26A, VGS = 0V trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr 0.9 1.3 A V 70 nS 200 A 0.043 µC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P48N02LD”, DATE CODE or LOT # 2 JUL-11-2001 P48N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 (D PAK) TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.35 10.1 H B 2.2 2.4 I 6.4 6.6 C 0.48 0.6 J 5.2 5.4 D 0.89 1.5 K 0.6 1 E 0.45 0.6 L 0.64 0.9 F 0.03 0.23 M 4.4 4.6 G 6 6.2 N 3 0.8 JUL-11-2001