NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 7 -6 6 -5 28 -24 TC = 25 °C Continuous Drain Current Pulsed Drain Current ID TC = 70 °C 1 IDM TC = 25 °C Power Dissipation 2 PD TC = 70 °C W 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 1 TL 275 Lead Temperature ( /16” from case for 10 sec.) A °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL RθJA MAXIMUM UNITS 62.5 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 0.8 1.5 2.5 P-Ch -0.8 -1.5 -2.5 VDS = VGS, ID = -250µA 1 V OCT-22-2003 NIKO-SEM Gate-Body Leakage Zero Gate Voltage Drain Current IDSS N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 VDS = -20V, VGS = 0V, TJ = 55 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A On-State VGS = -4.5V, ID = -5A RDS(ON) gfs N-Ch 28 P-Ch -24 N-Ch 21 32 P-Ch 44 60 21 P-Ch 28 35 N-Ch 8 P-Ch 7 N-Ch 1700 N-Channel P-Ch 970 VGS = 0V, VDS = 10V, f = 1MHz N-Ch 380 P-Channel P-Ch 370 VGS = 0V, VDS = -10V, f = 1MHz N-Ch 260 P-Ch 180 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, N-Ch 40 P-Ch 28 ID = 6A N-Ch 28 P-Channel P-Ch 6 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 12 ID = -5A P-Ch 12 VDS = -10V, ID = -5A µA mΩ 14 VDS = 10V, ID = 5A nA A N-Ch VGS = 10V, ID = 7A VGS = -10V, ID = -6A Forward Transconductance1 SOP-8 VDS = 0V, VGS = ±20V IGSS VDS = -24V, VGS = 0V Drain-Source Resistance1 P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd 2 pF nC OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor Turn-On Delay Time2 Rise Time2 tr Turn-Off Delay Time2 N-Channel td(on) N-Ch 20 P-Ch 20 N-Ch 10 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 17 N-Ch 120 P-Ch 160 N-Ch 35 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 75 P-Channel td(off) tf SOP-8 VDS = 15V VDS = -15V, RL = 1Ω Fall Time2 P2103NV nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current 3 IS Pulsed Current ISM Forward Voltage1 VSD IF = 1A, VGS = 0V IF = -1A, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS IF = -5A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr N-Ch 3 P-Ch -3 N-Ch 6 P-Ch -6 N-Ch 1 P-Ch -1 N-Ch 15.5 P-Ch 15.5 N-Ch 7.9 P-Ch 7.9 A V nS nC 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P2103NV”, DATE CODE or LOT # 3 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 N-CHANNEL 4 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P2103NV SOP-8 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 P-CHANNEL 6 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P2103NV SOP-8 OCT-22-2003 NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 SOIC-8 (D) MECHANICAL DATA Dimension mm Min. Typ. Max. A 4.8 4.9 5.0 B 3.8 3.9 C 5.8 D 0.38 E Dimension mm Min. Typ. Max. H 0.5 0.715 0.83 4.0 I 0.18 0.254 0.25 6.0 6.2 J 0.445 0.51 K 1.27 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N 8 OCT-22-2003