P1303BVG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 12.5mΩ 10A SOP-8 Lead Free D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current TC = 70 °C Pulsed Drain Current 10 ID 1 8 IDM TC = 25 °C Power Dissipation 50 2.5 PD TC = 70 °C Junction & Storage Temperature Range A W 1.6 Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL MAXIMUM UNITS 50 °C / W RθJA 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage V 1.5 2.5 ±100 nA VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 VGS = 4.5V, ID = 5A 13 20 RDS(ON) VGS = 10V, ID = 10A 9.5 12.5 gfs VDS = 15V, ID = 10A 38 Forward Transconductance1 VDS = 5V, VGS = 10V 1 20 µA A mΩ S AUG-13-2004 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1303BVG SOP-8 Lead Free DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 275 Total Gate Charge2 Qg 43 Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 9.0 Qgd ID = 10A 7.0 td(on) Turn-Off Delay Time2 td(off) pF 600 VDS = 0.5V(BR)DSS, VGS = 10V, tr Fall Time2 VGS = 0V, VDS = 15V, f = 1MHz Qgs 2 Rise Time 3100 60 nC 15 30 VDS = 15V , RL = 25Ω 9 20 ID ≅ 1A, VGS = 10V, RGEN = 6Ω 70 100 20 80 tf nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 2.3 Pulsed Current ISM 4.6 Forward Voltage1 VSD IF = 1A, VGS = 0V trr IF = 2.3A, dlF/dt = 100A / µS 3 Reverse Recovery Time 50 A 1.1 V 80 nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P1303BVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free TYPICAL PERFORMANCE CHARACTERISTICS 3 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor 4 P1303BVG SOP-8 Lead Free AUG-13-2004 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1303BVG SOP-8 Lead Free SOIC-8 (D) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. A 4.8 4.9 5.0 B 3.8 3.9 C 5.8 D 0.38 E Min. Typ. Max. H 0.5 0.715 0.83 4.0 I 0.18 0.254 0.25 6.0 6.2 J 0.445 0.51 K 1.27 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N 5 AUG-13-2004