SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features ■ ■ ■ ■ ■ Symbol Low RDS(on) (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C) Available in Tape and Reel D1 7 2 G1 D1 8 1 S1 General Description 8-SOIC This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for Battery switch, Load switch and Motor controler. D1 D1 D2 D2 S1 G S 2 G1 2 Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain to Source Voltage 30 V Continuous Drain Current(@TA = 25°C) 5.8 A 30 A IDM Drain Current Pulsed VGS Gate to Source Voltage ±20 V Total Power Dissipation Single Operation (TA=25°C) 2.0 W Total Power Dissipation Single Operation (TA=70°C) 1.28 W - 55 ~ 150 °C 300 °C PD TSTG, TJ TL (Note 1) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJA Value Parameter Thermal Resistance, Junction-to-Ambient (Note 4) Min. Typ. Max. - - 62.5 December, 2002. Rev. 1. Units °C/W 1/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. SFS4936 Electrical Characteristics Symbol ( TJ = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 30 - - V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 29 - mV/°C IDSS Drain-Source Leakage Current VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C - - 1 25 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 3.0 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 5.8A VGS = 4.5 V, ID = 4.7A - 0.027 0.037 0.035 0.053 Ω - 600 - - 295 - - 90 - Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0 V, VDS =15V, f = 1MHz pF Dynamic Characteristics td(on) tr td(off) tf Turn-on Delay Time VDD =15V, ID =1A, RG =50Ω Rise Time Turn-off Delay Time (Note 2,3) Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VDS =15V, VGS =10V, ID =5.8A (Note 2,3) - 9 28 - 10 30 - 85 180 - 40 90 ns - 20 26 - 2.3 - - 5 - Min. Typ. Max. Unit. - - 1.7 A - - 1.2 V nC Source-Drain Diode Ratings and Characteristics Symbol IS VSD Parameter Test Conditions Maximum Continuous Diode Forward Current Diode Forward Voltage IS =1.7A, VGS =0V ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. 2/6 (Note 2) SFS4936 Fig 2. Transfer Characteristics Fig 1. On-State Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 125 C 0 10 o 25 C o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 15V 2. 250µ s Pulse Test -1 0 10 -1 10 0 10 1 10 0 10 1 2 3 4 5 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 0.07 IDR, Reverse Drain Current[A] RDS(ON), Drain-Source On-Resistance[Ω ] 0.08 0.06 0.05 VGS = 4.5V 0.04 VGS = 10V 0.03 0.02 0.01 0.00 1 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0 0 5 10 15 20 25 10 30 0.2 0.4 0.6 ID, Drain Current [A] 1500 1.2 1.4 1.6 1.8 12 1000 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1250 Capacitance [pF] 1.0 Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics ※ Notes : 1. VGS = 0V 2. f=1MHz 750 Ciss 500 Coss 250 Crss 0 0.8 VSD, Source-Drain voltage[V] 0 5 10 VDS = 15V 8 VDS = 24V 6 4 2 ※ Note : ID = 5.8A 10 15 20 VDS, Drain-Source Voltage [V] 25 30 0 0 5 10 15 20 25 QG, Total Gate Charge [nC] 3/6 SFS4936 Fig 8. On-Resistance Variation vs. Junction Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature 2.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 5.8 A 0.0 -100 200 -50 0 50 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Zθ JANormalized, Thermal Response Fig 9. Normalized Transient Thermal Response Curve 10 0 D = 0 .5 0 .2 10 0 .1 -1 ※ N o te s : 1 . Z θ J A( t) = 6 2 .5 ℃ /W 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T A = P D M * Z θ J A( t) 0 .0 5 0 .0 2 s in g le p u ls e 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] 4/6 100 o o 10 1 150 200 SFS4936 Fig. 10. Gate Charge Test Circuit & Waveforms VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 1mA Charge Fig 11. Switching Time Test Circuit & Waveforms VDS RL VDS 90% VDD ( 0.5 rated V DS ) 10V V Pulse Generator RG DUT Vin 10% tr td(on) t on td(off) tf t off 5/6 SFS4936 8-SOIC Package Dimension mm Dim. Min. Inch Typ. Max. Min. Typ. Max. A 1.35 1.55 1.75 0.053 0.061 0.069 B 0.1 0.175 0.25 0.004 0.007 0.010 C 0.38 0.445 0.510 0.015 0.018 0.020 D 0.19 0.22 0.25 0.007 0.009 0.010 E 4.8 4.9 5 0.189 0.193 0.197 F 3.8 3.9 4 0.150 0.154 0.157 G 1.27 BSC H 5.8 6 6.2 0.228 0.236 0.244 I 0.5 0.715 0.93 0.020 0.028 0.037 J 0’ 4’ 8’ 0’ 4’ 8’ K 0.250 0.375 0.05 0.010 0.015 0.020 0.254(Gap plane) F E A G 6/6 C B 0.1 H K × 45° D J I