TI TPS3700DDCR

TPS3700
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SBVS187B – FEBRUARY 2012 – REVISED APRIL 2012
Window Comparator for Over- and Undervoltage Detection
Check for Samples: TPS3700
FEATURES
1
•
•
•
•
•
Wide Supply Voltage Range: 1.8 V to 18 V
Adjustable Threshold: Down to 400 mV
Open-Drain Outputs for Over- and
Undervoltage Detection
Low Quiescent Current: 5.5 µA (typ)
High Threshold Accuracy:
– 1.0% Over Temperature
– 0.25% (typ)
Internal Hysteresis: 5.5 mV (typ)
Temperature Range: –40°C to +125°C
Available in a ThinSOT23-6 Package
APPLICATIONS
•
•
•
•
•
•
•
Industrial Control Systems
Automotive Systems
Embedded Computing Modules
DSP, Microcontroller, or Microprocessor
Applications
Notebook and Desktop Computers
Portable- and Battery-Powered Products
FPGA and ASIC Applications
VMON
DESCRIPTION
The
TPS3700
wide-supply
voltage
window
comparator operates over a 1.8-V to 18-V range. The
device has two high-accuracy comparators with an
internal 400-mV reference and two open-drain
outputs rated to 18 V for over- and undervoltage
detection. The TPS3700 can be used as a window
comparator or as two independent voltage monitors;
the monitored voltage can be set with the use of
external resistors.
OUTA is driven low when the voltage at INA+ drops
below (VITP – VHYS), and goes high when the voltage
returns above the respective threshold (VITP). OUTB
is driven low when the voltage at INB– rises above
VITP, and goes high when the voltage drops below the
respective threshold (VITP – VHYS). Both comparators
in the TPS3700 include built-in hysteresis for filtering
to reject brief glitches, thereby ensuring stable output
operation without false triggering.
The TPS3700 is available in a ThinSOT23-6 package
and is specified over the junction temperature range
of –40°C to +125°C.
OUTA
•
•
•
2
1.8 V to 18 V
INA+
VITP
0.1 mF
VDD
RP1
OUTA
INA+
RP2
R2
Device
To a reset
or enable
input of
the system.
OUTB
R1
INB
OUTB
INB-
R3
DDC PACKAGE
ThinSOT23-6
(TOP VIEW)
GND
Figure 1. TPS3700 Typical Application
VITP
OUTA
1
6
OUTB
GND
2
5
VDD
INA+
3
4
INB-
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TPS3700
SBVS187B – FEBRUARY 2012 – REVISED APRIL 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
PRODUCT
DESCRIPTION
yyy is package designator
z is package quantity
TPS3700yyyz
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
VALUE
Voltage (2)
Current
Electrostatic discharge (ESD) rating (3)
(2)
(3)
MAX
UNIT
–0.3
+20
V
VOUTA, VOUTB
–0.3
+20
V
VINA+, VINB–
–0.3
+7
V
40
mA
°C
Output pin current
Temperature
(1)
MIN
VDD
Operating junction, TJ
–40
+125
Storage, Tstg
–65
+150
°C
2
kV
500
V
Human body model (HBM)
Charge device model (CDM)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
All voltages are with respect to network ground terminal.
ESD testing is performed according to the respective JESD22 JEDEC standard.
THERMAL INFORMATION
TPS3700
THERMAL METRIC
(1)
DDC (SOT23)
UNITS
6 PINS
θJA
Junction-to-ambient thermal resistance
204.6
θJCtop
Junction-to-case (top) thermal resistance
50.5
θJB
Junction-to-board thermal resistance
54.3
ψJT
Junction-to-top characterization parameter
0.8
ψJB
Junction-to-board characterization parameter
52.8
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
(1)
2
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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ELECTRICAL CHARACTERISTICS
Over the operating temperature range of TJ = –40°C to +125°C, and 1.8 V < VDD < 18 V, unless otherwise noted.
Typical values are at TJ = +25°C and VDD = 5 V.
PARAMETER
VDD
TEST CONDITIONS
Supply voltage range
V(POR)
VITP
Power-on reset voltage
(1)
VITN
Negative-going input threshold voltage
VHYS
Hysteresis voltage (HYS = VITP – VITN)
Input current (at IN pin)
VOL
Low-level output voltage
Ilkg(OD)
TYP
1.8
Positive-going input threshold voltage
IIN
MIN
Open-drain output leakage current
MAX
18
VOL (max) = 0.2 V, I(OUT) = 15 µA
UNIT
V
0.8
V
400
404
mV
396
400
404
mV
387
394.5
400
mV
387
394.5
400
mV
5.5
12
mV
25
nA
VDD = 1.8 V
396
VDD = 18 V
VDD = 1.8 V
VDD = 18 V
VDD = 1.8 V and 18 V, VIN = 6.5 V
–25
1
VDD = 1.8 V and 18 V, VIN = 0.1 V
–15
1
15
nA
VDD = 1.3 V, IOUT = 0.4 mA
250
mV
VDD = 1.8 V, IOUT = 3 mA
250
mV
VDD = 5 V, IOUT = 5 mA
250
mV
VDD = 1.8 V and 18 V, VOUT = VDD
300
nA
VDD = 1.8 V, VOUT = 18 V
300
nA
tpd(HL)
High-to-low propagation delay (2)
VDD = 5 V, 10-mV input overdrive,
RL = 10 kΩ, VOH = 0.9 × VDD, VOL = 400 mV
tpd(LH)
Low-to-high propagation delay (2)
VDD = 5 V, 10-mV input overdrive,
RL = 10 kΩ, VOH = 0.9 × VDD, VOL = 400 mV
29
µs
tR
Output rise time
VDD = 5 V, 10-mV input overdrive,
RL = 10 kΩ, VO = (0.1 to 0.9) × VDD
2.2
µs
tF
Output fall time
VDD = 5 V, 10-mV input overdrive,
RL = 10 kΩ, VO = (0.1 to 0.9) × VDD
0.22
µs
VDD = 1.8 V, no load
IDD
Supply current
5.5
11
µA
6
13
µA
VDD = 12 V
6
13
µA
7
13
µA
VDD = 18 V
(1)
(2)
(3)
(4)
Undervoltage lockout (4)
µs
VDD = 5 V
Startup delay (3)
UVLO
18
150
VDD falling
1.3
µs
1.7
V
The lowest supply voltage (VDD) at which output is active; tr(VDD) > 15 µs/V. Below V(POR), the output cannot be determined.
High-to-low and low-to-high refers to the transition at the input pins (INA+ and INB–).
During power on, VDD must exceed 1.8 V for at least 150 µs before the output is in a correct state.
When VDD falls below UVLO, OUTA is driven low and OUTB goes to high impedance. The outputs cannot be determined below V(POR).
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PARAMETRIC MEASUREMENT INFORMATION
TIMING DIAGRAM
VDD
VITP
VHYS
INA+
OUTA
tpd(HL)
tpd(LH)
tpd(LH)
VITP
VHYS
INB-
OUTB
tpd(LH)
tpd(HL)
Figure 2. TPS3700 Timing Diagram
4
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PIN CONFIGURATIONS
DDC PACKAGE
ThisSOT23-6
(TOP VIEW)
OUTA
1
6
OUTB
GND
2
5
VDD
INA+
3
4
INB-
PIN ASSIGNMENTS
PIN NAME
PIN NO.
GND
2
Ground
DESCRIPTION
INA+
3
This pin is connected to the voltage to be monitored with the use of an external resistor divider. When the
voltage at this terminal drops below the threshold voltage (VITP – VHYS), OUTA is driven low.
INB–
4
This pin is connected to the voltage to be monitored with the use of an external resistor divider. When the
voltage at this terminal exceeds the threshold voltage (VITP), OUTB is driven low.
OUTA
1
INA+ comparator open-drain output. OUTA is driven low when the voltage at this comparator is below
(VITP – VHYS). The output goes high when the sense voltage returns above the respective threshold (VITP).
OUTB
6
INB– comparator open-drain output. OUTB is driven low when the voltage at this comparator exceeds VITP.
The output goes high when the sense voltage returns below the respective threshold (VITP – VHYS).
VDD
5
Supply voltage input. Connect a 1.8-V to 18-V supply to VDD to power the device. It is good analog design
practice to place a 0.1-µF ceramic capacitor close to this pin.
BLOCK DIAGRAM
VDD
INA+
OUTA
OUTB
INB-
Reference
GND
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TYPICAL CHARACTERISTICS
At TJ = +25°C and VCC = 5 V, unless otherwise noted.
SUPPLY CURRENT vs SUPPLY VOLTAGE
RISING INPUT THRESHOLD VOLTAGE vs TEMPERATURE
401
10
VDD = 1.8 V
VDD = 5 V
VDD = 12 V
VDD = 18 V
9
400.6
8
6
VITP (mV)
IDD (µA)
7
5
4
−40°C
0°C
+25°C
+85°C
+125°C
3
2
1
0
0
2
4
6
8
10
VDD (V)
12
14
16
400.2
399.8
399.4
399
−40 −25 −10
18
G002
30
VDD = 1.8 V
VDD = 5 V
VDD = 12 V
VDD = 18 V
High−to−Low Propagation Delay (µs)
VHYS (mV)
110 125
PROPAGATION DELAY vs TEMPERATURE
(High-to-Low Transition at the Inputs)
6
4
3
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
VDD = 1.8 V, INB− to OUTB
VDD = 18 V, INB− to OUTB
VDD = 1.8 V, INA+ to OUTA
VDD = 18 V, INA+ to OUTA
28
26
24
22
20
18
16
14
12
10
8
−40 −25 −10
110 125
5
G003
20 35 50 65
Temperature (°C)
80
95
110 125
G004
Figure 5.
Figure 6.
PROPAGATION DELAY vs TEMPERATURE
(Low-to-High Transition at the Inputs)
MINIMUM PULSE WIDTH vs
THRESHOLD OVERDRIVE VOLTAGE (1)
30
20
28
18
26
16
Input Pulse Duration (µs)
Low−to−High Propagation Delay (µs)
95
HYSTERESIS vs TEMPERATURE
5
24
22
20
18
16
14
VDD = 1.8 V, INB− to OUTB
VDD = 18 V, INB− to OUTB
VDD = 1.8 V, INA+ to OUTA
VDD = 18 V, INA+ to OUTA
12
10
8
−40 −25 −10
5
20 35 50 65
Temperature (°C)
80
95
INA+
INB−
14
12
10
8
6
4
2
110 125
0
2.5
G005
Figure 7.
6
80
Figure 4.
7
(1)
20 35 50 65
Temperature (°C)
Figure 3.
9
8
5
G001
4
5.5
7
8.5
10 11.5
VITP Overdrive (%)
13
14.5
16
G006
Figure 8.
INA+ = negative spike below VITN and INB– = positive spike above VITP.
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TYPICAL CHARACTERISTICS (continued)
At TJ = +25°C and VCC = 5 V, unless otherwise noted.
OUTPUT VOLTAGE LOW vs OUTPUT SINK CURRENT
(–40°C)
SUPPLY CURRENT vs OUTPUT SINK CURRENT
11
2000
10
1750
9
1500
7
VOL (mV)
IDD (µA)
8
6
5
−40°C
0°C
+25°C
+85°C
+125°C
4
3
2
1
0
5
10
15
20
25
30
Output Sink Current (mA)
35
1000
750
250
0
40
0
5
10
G007
15
20
25
30
Output Sink Current (mA)
35
40
G008
Figure 9.
Figure 10.
OUTPUT VOLTAGE LOW vs OUTPUT SINK CURRENT
(0°C)
OUTPUT VOLTAGE LOW vs OUTPUT SINK CURRENT
(+25°C)
2000
VDD = 1.8 V
VDD = 5 V
VDD = 18 V
1750
1500
1500
1250
1000
750
1250
1000
750
500
500
250
250
0
0
5
10
VDD = 1.8 V
VDD = 5 V
VDD = 18 V
1750
VOL (mV)
VOL (mV)
1250
500
2000
15
20
25
30
Output Sink Current (mA)
35
0
40
0
5
10
G009
15
20
25
30
Output Sink Current (mA)
35
40
G010
Figure 11.
Figure 12.
OUTPUT VOLTAGE LOW vs OUTPUT SINK CURRENT
(+85°C)
OUTPUT VOLTAGE LOW vs OUTPUT SINK CURRENT
(+125°C)
2000
2000
VDD = 1.8 V
VDD = 5 V
VDD = 18 V
1750
1500
1500
1250
1000
750
1250
1000
750
500
500
250
250
0
0
5
10
VDD = 1.8 V
VDD = 5 V
VDD = 18 V
1750
VOL (mV)
VOL (mV)
VDD = 1.8 V
VDD = 5 V
VDD = 18 V
15
20
25
30
Output Sink Current (mA)
35
40
0
0
G011
Figure 13.
5
10
15
20
25
30
Output Sink Current (mA)
35
40
G012
Figure 14.
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TYPICAL CHARACTERISTICS (continued)
At TJ = +25°C and VCC = 5 V, unless otherwise noted.
STARTUP DELAY
(VDD = 5 V, INA+ = 390 mV, INB– = 410 mV,
Outputs Pulled Up to VDD)
STARTUP DELAY
(VDD = 5 V, INA+ = 410 mV, INB– = 390 mV,
Outputs Pulled Up to VDD)
OUTB
C2
(2.0 V/div)
C1
(2.0 V/div)
C3
(2.0 V/div)
C2
(2.0 V/div)
OUTB
OUTA
C1
(2.0 V/div)
C3
(2.0 V/div)
VDD
Time (100 ms/div)
G013
Figure 15.
8
OUTA
VDD
Time (100 ms/div)
G014
Figure 16.
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GENERAL DESCRIPTION
The TPS3700 combines two comparators for over- and undervoltage detection. The TPS3700 is a wide-supply
voltage range (1.8 V to 18 V) device with a high-accuracy rising input threshold of 400 mV (1% over temperature)
and built-in hysteresis. The outputs are also rated to 18 V and can sink up to 40 mA.
The TPS3700 is designed to assert the output signals, as shown in Table 1. Each input pin can be set to monitor
any voltage above 0.4 V using an external resistor divider network. With the use of two input pins of different
polarities, the TPS3700 forms a window comparator. Broad voltage thresholds can be supported that allow the
device to be used in a wide array of applications.
Table 1. TPS3700 Truth Table
CONDITION
OUTPUT
STATUS
INA+ > VITP
OUTA high
Output A not asserted
INA+ < VITN
OUTA low
Output A asserted
INB– > VITP
OUTB low
Output B asserted
INB– < VITN
OUTB high
Output B not asserted
INPUTS (INA+, INB–)
The TPS3700 combines two comparators. Each comparator has one external input (inverting and noninverting);
the other input is connected to the internal reference. The comparator rising threshold is designed and trimmed
to be equal to the reference voltage (400 mV). Both comparators also have a built-in falling hysteresis that
makes the device immune to supply rail noise and ensures stable operation.
The comparator inputs can swing from ground to 6.5 V, regardless of the device supply voltage used. Although
not required in most cases, it is good analog design practice to place a 1-nF to 10-nF bypass capacitor at the
comparator input for extremely noisy applications in order to reduce sensitivity to transients and layout parasitics.
For comparator A, the corresponding output (OUTA) is driven to logic low when the input INA+ voltage drops
below (VITP – VHYS). When the voltage exceeds VITP, the output (OUTA) goes to a high-impedance state; see
Figure 2.
For comparator B, the corresponding output (OUTB) is driven to logic low when the voltage at input INB–
exceeds VITP. When the voltage drops below VITP – VHYS the output (OUTB) goes to a high-impedance state; see
Figure 2. Together, these comparators form a window-detection function as discussed in the Window
Comparator section.
OUTPUTS (OUTA, OUTB)
In a typical TPS3700 application, the outputs are connected to a reset or enable input of the processor [such as
a digital signal processor (DSP), central processing unit (CPU), field-programmable gate array (FPGA), or
application-specific integrated circuit (ASIC)] or the outputs are connected to the enable input of a voltage
regulator [such as a dc-dc or low-dropout regulator (LDO)].
The TPS3700 provides two open-drain outputs (OUTA and OUTB); pull-up resistors must be used to hold these
lines high when the output goes to high impedance (not asserted). By connecting pull-up resistors to the proper
voltage rails, the outputs can be connected to other devices at correct interface voltage levels. The TPS3700
outputs can be pulled up to 18 V, independent of the device supply voltage. To ensure proper voltage levels,
some thought should be given while choosing the pull-up resistor values. The pull-up resistor value is determined
by VOL, sink current capability, and output leakage current (Ilkg(OD)). These values are specified in the Electrical
Characteristics table. By using wired-AND logic, OUTA and OUTB can be merged into one logic signal.
Table 1 and the Inputs section describe how the outputs are asserted or de-asserted. Refer to Figure 2 for a
timing diagram that describes the relationship between threshold voltages and the respective output.
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WINDOW COMPARATOR
The inverting and noninverting configuration of the comparators forms a window-comparator detection circuit
using a resistor divider network, as shown in Figure 17 and Figure 18. The input pins can monitor any system
voltage above 400 mV with the use of a resistor divider network. INA+ and INB– monitor for undervoltage and
overvoltage conditions, respectively.
VMON
(13.2 V to 10.8 V)
1.8 V to 18 V
VDD
RP1
(50 kW)
IN
OUTA
INA+
Voltage
Regulator VOUT
R2
(13.7 kW)
EN
Device
OUTB
INBR3
(69.8 kW)
OUT
R1
(2.21 MW)
UV VMON OV
OUT
GND
Figure 17. Window Comparator Block Diagram
Overvoltage
Limit
VMON
Undervoltage
Limit
OUTB
OUTA
Figure 18. Window Comparator Timing Diagram
10
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The resistor divider values and target threshold voltage can be calculated by using Equation 1 through
Equation 4:
RTOTAL = R1 + R2 + R3
(1)
Choose RTOTAL such that current through the divider is approximately 100x higher than the input current at the
INA+ and INB– pins. The resistors can have high values to minimize current consumption as a result of low input
bias current without adding significant error to the resistive divider. Refer to application note Optimizing Resistor
Dividers at a Comparator Input (SLVA450) for details on sizing input resistors.
R3 is determined by Equation 2:
RTOTAL
R3 =
´ VITP
VMON(OV)
where:
VMON(OV) is the target voltage at which an overvoltage condition is detected
(2)
R2 is determined by either Equation 3 or Equation 4:
RTOTAL
R2 =
´ VITP - R3
VMON (no UV)
where:
VMON(no
R2 =
UV)
RTOTAL
VMON(UV)
is the target voltage at which an undervoltage condition is removed as VMON rises
(3)
´ (VITP - VHYS) - R3
where:
VMON(UV) is the target voltage at which an undervoltage condition is detected
(4)
For more application information on the TPS3700, refer to Figure 19 through Figure 22.
IMMUNITY TO INPUT PIN VOLTAGE TRANSIENTS
The TPS3700 is relatively immune to short voltage transient spikes on the input pins. Sensitivity to transients is
dependent on both transient duration and amplitude; refer to the Typical Characteristics curve, Minimum Pulse
Width vs Threshold Overdrive Voltage (Figure 8).
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VPULL-UP
(Up To 18 V)
1.8 V to 18 V
VDD
OUTA
INA+
To a reset or enable input
of the system.
Device
OUTB
INB-
GND
Figure 19. Interfacing to Voltages Other Than VDD
1.8 V to 18 V
VDD
OUTA
INA+
To a reset or enable input
of the system.
Device
OUTB
INB-
GND
Figure 20. Monitoring the Same Voltage as VDD
12
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VMON
(26.4 V to 21.7 V)
1.8 V to 18 V
R1
(2.61 MW)
VDD
OUTA
INA+
R2
(8.06 kW)
Device
R3
(40.2 kW)
To a reset or enable input
of the system.
OUTB
INB-
GND
NOTE: The inputs can monitor a voltage higher than VDD (max) with the use of an external resistor divider network.
Figure 21. Monitoring a Voltage Other Than VDD
1.8 V to 18 V
OUTA
INA+
To a reset or enable
input of the system.
Device
12 V
OUTB
INB-
INA+
VITP
INB-
VITP
OUTB
5V
OUTA
VDD
GND
NOTE: In this case, OUTA is driven low when an undervoltage condition is detected at the 5-V rail and OUTB is driven low when an
overvoltage condition is detected at the 12-V rail.
Figure 22. Monitoring Overvoltage for One Rail and Undervoltage for a Different Rail
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REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (February 2012) to Revision B
•
14
Page
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Product Folder Link(s): TPS3700
PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
TPS3700DDCR
ACTIVE
SOT
DDC
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS3700DDCT
ACTIVE
SOT
DDC
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Apr-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS3700DDCR
SOT
DDC
6
3000
179.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
TPS3700DDCT
SOT
DDC
6
250
179.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Apr-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS3700DDCR
SOT
DDC
6
3000
195.0
200.0
45.0
TPS3700DDCT
SOT
DDC
6
250
195.0
200.0
45.0
Pack Materials-Page 2
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