WS256K64-XG4WX 256Kx64 SRAM MODULE ADVANCED* FEATURES ■ Access Times 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging: ■ Commercial, Industrial and Military Temperature Range ■ 5 Volt Power Supply ■ Low Power CMOS • 116 lead, 40mm, Hermetic CQFP (Package 504) ■ Organized as 256Kx64, User Configurable as 512Kx32 or 1Mx16. ■ TTL Compatible Inputs and Outputs ■ Weight WS256K64-XG4WX - 20 grams typical ■ Data I/O Compatible with 3.3V devices * ■ 2V Data Retention devices available This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. FIG. 1 PIN CONFIGURATION FOR WS256K64-XG4WX 4 BLOCK DIAGRAM TOP VIEW 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 116 115 114 113 112 111 110 109 108 107 106 105 104 103 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 WE4 CS4 I/O60 I/O59 I/O58 I/O57 I/O56 GND I/O55 I/O54 I/O53 I/O52 I/O51 I/O50 I/O49 I/O48 GND I/O47 I/O46 I/O45 I/O44 I/O43 I/O42 I/O41 I/O40 GND I/O39 I/O38 I/O37 I/O36 I/O35 16 I/O0-15 256K x 16 16 I/O16-31 256K x 16 256K x 16 16 I/O32-47 16 I/O48-63 PIN DESCRIPTION I/O0-63 Data Inputs/Outputs A0-17 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground I/O29 I/O30 I/O31 VCC WE2 CS2 NC NC NC A17 A16 A15 NC NC OE CS3 WE3 A14 A13 A12 A11 A10 NC NC NC VCC I/O32 I/O33 I/O34 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 WE3 CS3 OE A0-17 256K x 16 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 WE2 CS2 September 1998 1 White Microelectronics • Phoenix, AZ • (602) 437-1520 SRAM MODULES I/O2 I/O1 I/O0 VCC NC NC NC A0 A1 A2 A3 A4 WE1 CS1 NC NC NC A5 A6 A7 A8 A9 NC CS4 WE4 VCC I/O63 I/O62 I/O61 WE1 CS 1 WS256K64-XG4WX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc + 0.5 V Junction Temperature TJ 150 °C 7.0 V Storage Temperature Supply Voltage -0.5 VCC CAPACITANCE (T A = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Supply Voltage Min Max 4.5 VCC 5.5 Symbol Condition Max Unit Unit Parameter Output Enable Capacitance C OE V IN = 0V, f = 1.0MHz 50 pF V Write Enable Capacitance C WE V IN = 0V, f = 1.0MHz 20 pF C CS V IN = 0V, f = 1.0MHz 20 pF C I/ O CAD V IN = 0V, f = 1.0MHz VIN = OV, f = 1.OMHZ 20 50 pF pF Input High Voltage VIH 2.2 V CC + 0.3 V Chip Select Capacitance Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Data I/OCapacitance Address Input Capacitance This parameter is guaranteed by design but not tested. 4 SRAM MODULES DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Sym Conditions Units Min Max 10 µA Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current ICC CS = VIL , OE = VIH, f = 5MHz, Vcc = 5.5 920 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 68 mA Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V White Microelectronics • Phoenix, AZ • (602) 437-1520 2 V V WS256K64-XG4WX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol Read Cycle -20 -25 Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS Max 20 Min -35 Max 25 Units Max 35 20 0 Min ns 25 0 35 ns 35 ns 20 ns 0 20 ns 25 Output Enable to Output Valid t OE Chip Select to Output in Low Z t CLZ 1 5 12 5 15 5 Output Enable to Output in Low Z t OLZ 1 0 0 0 Chip Disable to Output in High Z t CHZ 1 12 15 15 ns Output Disable to Output in High Z t OHZ 1 12 15 15 ns ns ns 1. This parameter is guaranteed by design but not tested. 4 Parameter Symbol Write Cycle -20 -25 Min Max Min -35 Max Min Units Max Write Cycle Time t WC 20 25 35 ns Chip Select to End of Write t CW 17 20 25 ns Address Valid to End of Write t AW 17 20 25 ns Data Valid to End of Write t DW 12 15 20 ns Write Pulse Width t WP 17 20 25 ns Address Setup Time t AS 0 0 0 ns Address Hold Time t AH 2 2 2 ns Output Active from End of Write t OW 1 0 0 0 Write Enable to Output in High Z t WHZ 1 Data Hold Time t DH 10 0 ns 10 0 15 ns 0 ns 1. This parameter is guaranteed by design but not tested. FIG. 2 AC TEST CONDITIONS AC TEST CIRCUIT I OL Parameter Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 3 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 Ω. V Z is typically the midpoint of V OH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Microelectronics • Phoenix, AZ • (602) 437-1520 SRAM MODULES AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) WS256K64-XG4WX FIG. 3 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) 4 READ CYCLE 2 (WE = VIH) SRAM MODULES FIG. 4 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 5 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Microelectronics • Phoenix, AZ • (602) 437-1520 4 tDH WS256K64-XG4WX PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W) 5.1 (0.200) MAX 1.27 (0.050) ± 0.1 (0.005) 39.6 (1.56) ± 0.38 (0.015) SQ PIN 1 IDENTIFIER Pin 1 12.7 (0.500) ± 0.5 (0.020) 4 PLACES 4 0.38 (0.015) ± 0.08 (0.003) 68 PLACES 1.27 (0.050) REF 0.25 (0.010) ± 0.05 (0.002) 38 (1.50) REF 4 PLACES ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W S 256K64 - XXX G4W X DEVICE GRADE: M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504) ACCESS TIME (ns) ORGANIZATION, 256K x 64 User configurable as 1M x 16 or 512K x 32 SRAM WHITE MICROELECTRONICS 5 White Microelectronics • Phoenix, AZ • (602) 437-1520 SRAM MODULES 5.1 (0.200) ± 0.25 (0.010) 4 PLACES