OMH310 OMH315 DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE Dual 50 Volt, 15 And 20 Amp H-Bridge With Current And Temperature Sensing In A Low Profile Plastic Package FEATURES • • • • • • H-Bridge Configuration Zener Gate Protection 10 m Shunt Resistor 2 Linear Thermal Sensors, One For Each Bridge Isolated Package Output Currents Up To 20 Amps DESCRIPTION This series of MOSFET switches is configured as a Dual H-Bridge with common VDD lines, precision series shunt resistor in the source line, and sensing elements to monitor the substrate temperature of each switch. This device is ideally suited for Stepping Motor Control applications where size, performance, and efficiency are key. MAXIMUM RATINGS (TC = @ 25°C) Part Number VDS (Volts) RDS(on) (m ) ID (Amps) Package OMH310 50 100 15 MP-3 OMH315 50 70 20 MP-3 ABSOLUTE MAXIMUM RATINGS (TC = @ 25°C unless otherwise noted) Parameter Drain Source Voltage, VDS Drain-Gate (RGS = 1m ), VDGR Continuous Drain Current, ID @ TC = 25°C Continuous Drain Current, ID @ TC = 70°C Pulse Drain Current, IDM (1) Maximum Power Dissipation, PD @ TC = 25°C Maximum Power Dissipation, PD @ TC = 70°C Linear Derating Factor, Junction-To-Case Thermal Resistance, Junction-To-Case (2) (2) OMH310 50 50 15 11 56 20 11 0.2 5.0 OMH315 50 50 25 16 100 50 18 0.33 3.0 Notes: (1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C. 4 11 R0 2.1 - 29 Units V V A A A W W W/C °C/W 2.1 OMH310 OMH315 ELECTRICAL CHARACTERISTICS: OMH310 (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BR)DSS 50 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 25.0 µA - - 500.0 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A RDS(on) - - 0.1 - - 0.2 ID(on) 15 - - A OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V DYNAMIC CHARACTERISTICS Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 9.0A Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs 3.0 - - mho VDS = 25 V, Ciss - - 650 pF VGS = 0, Coss - - 450 pF f = 1.0 mHz Crss - - 280 pF td(on) - - 30 ns tr - - 85 ns td(off) - - 90 ns tf - - 110 ns SWITCHING CHARACTERISTICS Turn-On Delay Time VDD = 30 V, ID = 3 A, Rise Time Turn-Off Delay Time RGS = 50 , VGS = 10 V Fall Time 2.1 SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current ISD - - 14 A Source - Drain Current Pulsed ISDM* - - 56 A Forward On-Voltage, ISD = 28 A, VGS = 0 VSD - - 1.8 V trr - 120 - ns Qrr - 0.15 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Reverse Recovery Time Reverse Recovered Charge ISD = 13 A, di/dt = 100 A/µSec RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5% 2.1 - 30 OMH310 OMH315 ELECTRICAL CHARACTERISTICS: OMH315A (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BR)DSS 50 - - V Zero Gate Voltage Drain Current = VGS , VDS = Max. Rat. IDSS - - 250 µA - - 750 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A RDS(on) - - 0.07 - - 0.14 ID(on) 20 - - A gfs 5.0 - - mho VDS = 25 V, Ciss - 1020 - pF VGS = 0, Coss - 500 - pF f = 1.0 mHz Crss - 120 - pF td(on) - - 50 ns tr - - 75 ns td(off) - - 50 ns tf - - 50 ns ISD - - 25 A Source - Drain Current (Pulsed) ISDM* - - 100 A Forward On-Voltage, ISD = 28 A, VGS = 0 VSD - - 2.4 V trr - 100 - ns Qrr - 0.15 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 V DYNAMIC CHARACTERISTICS Forward Transconductance, VDS > ID(on) X RDS(on) Max., ID = 10 A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time VDD = 30 V, ID = 10 A, Rise Time RGS = 4.7 , VGS = 10 V, Turn-Off Delay Time RL = 2.4 Fall Time 2.1 SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current Reverse Recovery Time Reverse Recovered Charge ISD = 13 A,di/dt = 100 A/µSec RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5% 2.1 - 31 OMH310 OMH315 SCHEMATIC 32 26 31 30 29 Q1 34 23 18 28 27 24 25 R1 Z1 Q7 Q5 Q3 R3 Z3 R5 Z5 R7 Z7 20 19 33 R2 Z2 Q8 Q6 Q4 Q2 1 R6 Z6 R4 Z4 R8 Z8 15 2 PTC 1 3 RS PTC 2 RS 7 4 6 5 8 11 12 13 9 14 16 10 17 21 22 2.1 MECHANICAL OUTLINE 2.000 .600 1.350 .325 .250 .135 .050 (34) PLCS. .150 (4) PLCS. .500 1 .150 2.450 3.000 4.000 .300 .250 .500 .360 .020 .360 MAX. Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Pin 7: Pin 8: Pin 9: Pin 10: Pin 11: Pin 12: Pin 13: Pin 14: Pin 15: Pin 16: Pin 17: Gate Q2 Source Q2 PTC 1 PTC 1 Gate Q4 Source Q4 Sense R 1 Sense R 1 Gate Q6 Source Q6 Return Sense Return Return Gate Q8 Source Q8 Sense R 2 Sense R 2 .180 Contact factory for lead bending options. Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100µm maximum). 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Pin 34: Gate Q1 Pin 33: Source Q1 Pin 32: Output Q1, Q2 Pin 31: Gate Q3 Pin 30: Source Q3 Pin 29: VM Pin 28: VM Pin 27: VM Pin 26: Output Q3, Q4 Pin 25: Gate Q5 Pin 24: Source Q5 Pin 23: Output Q5, Q6 Pin 22: +PTC Pin 21: -PTC Pin 20: Gate Q7 Pin 19: Source Q7 Pin 18: Output Q7, Q8