OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs Isolated Hermetic Metal Package Size 6 Die, High Energy, High Voltage Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened to MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS PART NUMBER OM6227SS OM6228SS OM6230SS OM6231SS OM6232SS OM6233SS VDS 400 500 1000 400 500 1000 RDS(on) .20 .27 1.30 .20 .27 1.30 ID (Amp) 24 22 10 24 22 10 * See Mechanical Drawing SCHEMATIC DRAIN 1 GATE BODY DIODE 3 6 GATE BODY DIODE 4 SOURCE 4 11 R2 Supersedes 2 07 R1 DRAIN 2 3.1 - 123 SOURCE 5 *Package S-6D S-6D S-6D S-6E S-6E S-6E 3.1 400V (Per MOSFET) Characteristic ELECTRICAL CHARACTERISTICS: (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS 500V (Per MOSFET) Characteristic (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. V(BR)DSS 500 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain V(BR)DSS 400 - - IDSS Vdc mAdc Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS Vdc mAdc (VDS = 400 V, VGS = 0) - - 0.25 (VDS = 500 V, VGS = 0) - - (VDS = 320 V, VGS = 0, TJ = 125° C) - - 1.0 (VDS = 500 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc Vdc 2.0 (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc) rDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 24 A) (ID = 12 A, TJ = 125° C) gFS 4.0 1.5 - 3.5 - - 0.20 - Forward Transconductance (VDS = 15 Vdc, ID = 12A Adc) 3.0 - 5.0 - - 5.0 14 - - Output Capacitance (TJ = 125° C) Ohm Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc) rDS(on) Vdc Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 24 A) (ID = 12 A, TJ = 125° C) mhos 3.1 - 124 (VDS = 25 V, VGS = 0, Ciss - 4000 - f = 1.0 MHz) Coss - 550 - Crss - 110 - Transfer Capacitance Gate-Source Charge pF Input Capacitance Output Capacitance 3.5 - 0.27 - - 8.0 Ohm Vdc - - 8.0 13 - - mhos (VDS = 25 V, VGS = 0, Ciss - 4000 - pF f = 1.0 MHz) Coss - 480 - Crss - 95 - Transfer Capacitance td(on) - 35 - tr - 95 - Rise Time Rgen = 4.3 ohms) td(off) - 80 - Turn-Off Delay Time tf - 80 - Fall Time (VDS = 400 V, ID = 24 A, Qg - 110 14 VGS = 10 V) Qgs - 20 - Qgd - 80 - Gate-Drain Charge ns 0nC Forward On-Voltage Reverse Recovery Time Total Gate Charge td(on) - 32 - (VDD = 250 V, ID = 24 A, tr - 95 - Rgen = 4.3 ohms) td(off) - 75 - tf - 75 - (VDS = 400 V, ID = 24 A, Qg - 115 140 VGS = 10 V) Qgs - 20 - Qgd - 60 - VSD - 1.1 1.6 Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS VSD (IS = 24 A, d/dt = 100 A/µs) Turn-On Delay Time Gate-Source Charge SOURCE DRAIN DIODE CHARACTERISTICS Forward Turn-On Time - - gFS Forward Transconductance (VDS = 15 Vdc, ID = 13 Adc) (VDD = 250 V, ID = 24 A, Fall Time Total Gate Charge 1.5 SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Vdc DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Rise Time VGS(th) (VDS = VGS, ID = 0.25 mAdc DYNAMIC CHARACTERISTICS Input Capacitance Gate-Threshold Voltage - ton trr 1.1 1.6 - 500 Vdc ns ** 1000 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance Forward On-Voltage Forward Turn-On Time (IS = 24 A, d/dt = 100 A/µs) Reverse Recovery Time ton trr * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°) Symbol Single Pulse Drain-To-Source Avalanche Energy Repetitive Pulse Drain-To-Source Avalanche Energy (1) VDD = 50V, ID = 10A (2) Pulse width and frequency is limited by TJ(max) and thermal response. TJ = 25°C TJ = 100°C WDSS (1) WDSS (2) Value 1000 160 25 Unit mJ - 500 Vdc ns ** 1000 OM6227SS - OM6233SS 3.1 ELECTRICAL CHARACTERISTICS: OM6227SS - OM6233SS ELECTRICAL CHARACTERISTICS: 1000V (Per MOSFET) Characteristic (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. V(BR)DSS 1000 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Vdc IDSS mAdc (VDS = 1000 V, VGS = 0) - - 10 (VDS = 1000 V, VGS = 0, TJ = 125° C) - - 100 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc) rDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 10 A) (ID = 5 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 1.3 - - 15 Ohm Vdc - - 15.3 gFS 5.0 - - mhos (VDS = 25 V, VGS = 0, Ciss - 5500 - pF f = 1.0 MHz) Coss - 530 - Crss - 90 - Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 60 - (VDD = 500 V, ID = 10 A, tr - 115 - Rgen = 9.1 ohms td(off) - 240 - VGS = 10 V) tf - 140 - (VDS = 400 V, ID = 10 A, Qg - 140 - VGS = 10 V) Qgs - - - Qgd - - - VSD - - 1.1 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns -nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 10 A, d/dt = 100 A/µs) ton Reverse Recovery Time trr Vdc ns ** - 600 1100 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance ABSOLUTE MAXIMUM RATINGS PER MOSFET (TC = 25°C unless otherwise noted) Parameter OM6227/ OM6231 OM6228/ OM6232 OM6230/ OM6233 Units VDS Drain-Source Voltage 400 500 1000 V VDGR Drain-Gate Voltage (RGS = 1 M ) 400 500 1000 V ID @ TC = 25°C Continuous Drain Current 24 22 10 A IDM Pulsed Drain Current 92 85 30 A PD @ TC = 25°C Maximum Power Dissipation 165 165 165 W PD Derate Above 25°C Case 1.31 1.31 1.31 W/°C WDSS (1) Single Pulse Energy 1000 1000 500 mJ -55 to +150 -55 to +150 -55 to +150 °C 275 275 275 °C Drain-To-Source @ 25°C TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/8" from case for 5 secs.) THERMAL RESISTANCE (Maximum) at TA = 25°C RthJC Junction-to-Case .76 °C/W RthJA Junction-to-Ambient 35 °C/W 3.1 - 125 Free Air Operation 3.1 OM6227SS - OM6233SS MECHANICAL OUTLINE PACKAGE S-6D 1.375 .270 MAX. .040 .150 DIA. 2 PLCS. .770 .118 .275 .545 1 2 3 4 5 6 .500 MIN. Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Drain Source Gate Gate Source Drain Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Drain Source Gate Gate Source Drain ±.002 .060 DIA. 6 PLCS. .200 TYP. .145 1.000 MECHANICAL OUTLINE PACKAGE S-6E 1.875 .270 MAX 1.625 .125 .250 2 PLCS. .125 DIA. 2 PLCS. 1.375 3.1 .040 .250 .545 .295 1 .125 2 3 4 5 6 .500 MIN. ±.002 .200 TYP. .187 .060 DIA. 6 PLCS. .145 1.000 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246