SFS4410 SemiWell Semiconductor Logic N-Channel MOSFET Features ■ ■ ■ ■ Symbol RDS(on) (Max 0.0135Ω )@VGS=10V D 5 4 G RDS(on) (Max 0.020Ω )@VGS=4.5V D 6 3 S Gate Charge (Typical 33nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel D 7 2 S D 8 1 S General Description 8-SOIC This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.This Power MOSFET is well suited for power management circuit or DC-DC converter. D D D D S S S G Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain to Source Voltage 30 V Continuous Drain Current(@TA = 25°C) 10 A 50 A IDM Drain Current Pulsed VGS Gate to Source Voltage ±20 V Total Power Dissipation Single Operation (TA=25°C) 2.5 W Total Power Dissipation Single Operation (TA=70°C) 1.6 W - 55 ~ 150 °C 300 °C PD TSTG, TJ TL (Note 1) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJA Value Parameter Thermal Resistance, Junction-to-Ambient (Note 4) Min. Typ. Max. - - 50 January, 2003. Rev. 0. Units °C/W 1/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. SFS4410 Electrical Characteristics Symbol ( TJ = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 30 - - V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C - 12 - mV/°C IDSS Drain-Source Leakage Current VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 °C - - 1 10 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA 1.0 - - 0.011 0.016 0.0135 0.020 - 1100 - IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 10A VGS = 4.5 V, ID = 9A V Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0 V, VDS =15V, f = 1MHz - 550 - - 150 - pF Dynamic Characteristics td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time VDD = 25V, ID = 1A, RG = 50Ω VGS = 10 V (Note 2,3) Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VDS = 15V, VGS = 10V, ID = 10A (Note 2,3) - 13 25 - 30 60 - 165 260 - 65 120 ns - 33 43 - 5.2 - - 8 - Min. Typ. Max. Unit. - - 2.1 A - - 1.2 V nC Source-Drain Diode Ratings and Characteristics Symbol IS VSD Parameter Test Conditions Continuous Source Diode Forward Current Diode Forward Voltage IS = 2.1A, VGS =0V ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. 2/6 (Note 2) SFS4410 Fig 2. Transfer Characteristics Fig 1. On-State Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 o 150 C 0 10 o 25 C o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 15V 2. 250µ s Pulse Test -1 0 10 -1 10 10 0 0 10 2 4 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [Ω ] 30 VGS = 4.5V 20 VGS = 10V 10 1 10 0 10 150℃ 25℃ 0 -1 0 10 20 30 40 50 10 0.2 0.4 0.6 ID, Drain Current [A] 1.0 1.2 1.4 Fig 6. Gate Charge Characteristics 2500 12 1500 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 2000 ※ Notes : 1. VGS = 0V 2. f=1MHz Ciss Coss 1000 500 Crss 0 0.8 VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0 10 VDS = 15V 8 VDS = 24V 6 4 2 ※ Note : ID = 10 A 5 10 15 VDS, Drain-Source Voltage [V] 20 25 0 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge [nC] 3/6 SFS4410 Fig 8. On-Resistance Variation vs. Junction Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature 2.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 10 A 0.0 -100 200 -50 0 50 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Normalized Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 0 .1 -1 0 .0 5 10 0 .0 2 0 .0 1 -2 ※ N o te s : 1 . Z θ J C(t) = 1 .0 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) s in g le p u ls e 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4/6 100 o o 10 2 150 200 SFS4410 Fig. 10. Gate Charge Test Circuit & Waveforms 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT 1mA Charge Fig 11. Switching Time Test Circuit & Waveforms VDS 10V V Pulse Generator RG RL DUT VDD VDS Vin 90% 10% td(on) tr t on td(off) t off tf 5/6 SFS4410 8-SOIC Package Dimension mm Dim. Min. Inch Typ. Max. Min. Typ. Max. A 1.35 1.55 1.75 0.053 0.061 0.069 B 0.1 0.175 0.25 0.004 0.007 0.010 C 0.38 0.445 0.510 0.015 0.018 0.020 D 0.19 0.22 0.25 0.007 0.009 0.010 E 4.8 4.9 5 0.189 0.193 0.197 F 3.8 3.9 4 0.150 0.154 0.157 G 1.27 BSC H 5.8 6 6.2 0.228 0.236 0.244 I 0.5 0.715 0.93 0.020 0.028 0.037 J 0’ 4’ 8’ 0’ 4’ 8’ K 0.250 0.375 0.05 0.010 0.015 0.020 0.254(Gap plane) F E A G 6/6 C B 0.1 H K × 45° D J I