ETC SFS4410

SFS4410
SemiWell Semiconductor
Logic N-Channel MOSFET
Features
■
■
■
■
Symbol
RDS(on) (Max 0.0135Ω )@VGS=10V
D
5
4
G
RDS(on) (Max 0.020Ω )@VGS=4.5V
D
6
3
S
Gate Charge (Typical 33nC)
Maximum Junction Temperature Range (150°C)
Available in Tape and Reel
D
7
2
S
D
8
1
S
General Description
8-SOIC
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics.This Power MOSFET is well suited
for power management circuit or DC-DC converter.
D
D
D
D
S
S
S
G
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
30
V
Continuous Drain Current(@TA = 25°C)
10
A
50
A
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
±20
V
Total Power Dissipation Single Operation (TA=25°C)
2.5
W
Total Power Dissipation Single Operation (TA=70°C)
1.6
W
- 55 ~ 150
°C
300
°C
PD
TSTG, TJ
TL
(Note 1)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJA
Value
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Min.
Typ.
Max.
-
-
50
January, 2003. Rev. 0.
Units
°C/W
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFS4410
Electrical Characteristics
Symbol
( TJ = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
30
-
-
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
12
-
mV/°C
IDSS
Drain-Source Leakage Current
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55 °C
-
-
1
10
uA
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
1.0
-
-
0.011
0.016
0.0135
0.020
-
1100
-
IGSS
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 10A
VGS = 4.5 V, ID = 9A
V
Ω
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =15V, f = 1MHz
-
550
-
-
150
-
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD = 25V, ID = 1A, RG = 50Ω
VGS = 10 V
(Note 2,3)
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
VDS = 15V, VGS = 10V, ID = 10A
(Note 2,3)
-
13
25
-
30
60
-
165
260
-
65
120
ns
-
33
43
-
5.2
-
-
8
-
Min.
Typ.
Max.
Unit.
-
-
2.1
A
-
-
1.2
V
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD
Parameter
Test Conditions
Continuous Source Diode Forward Current
Diode Forward Voltage
IS = 2.1A, VGS =0V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6
(Note 2)
SFS4410
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
1
10
o
150 C
0
10
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 15V
2. 250µ s Pulse Test
-1
0
10
-1
10
10
0
0
10
2
4
6
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
IDR, Reverse Drain Current [A]
RDS(ON),
Drain-Source On-Resistance [Ω ]
30
VGS = 4.5V
20
VGS = 10V
10
1
10
0
10
150℃
25℃
0
-1
0
10
20
30
40
50
10
0.2
0.4
0.6
ID, Drain Current [A]
1.0
1.2
1.4
Fig 6. Gate Charge Characteristics
2500
12
1500
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2000
※ Notes :
1. VGS = 0V
2. f=1MHz
Ciss
Coss
1000
500
Crss
0
0.8
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
Capacitance [pF]
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
10
VDS = 15V
8
VDS = 24V
6
4
2
※ Note : ID = 10 A
5
10
15
VDS, Drain-Source Voltage [V]
20
25
0
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
3/6
SFS4410
Fig 8. On-Resistance Variation
vs. Junction Temperature
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
2.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 10 A
0.0
-100
200
-50
0
50
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 9. Normalized Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
10
0 .1
-1
0 .0 5
10
0 .0 2
0 .0 1
-2
※ N o te s :
1 . Z θ J C(t) = 1 .0 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
s in g le p u ls e
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4/6
100
o
o
10
2
150
200
SFS4410
Fig. 10. Gate Charge Test Circuit & Waveforms
50KΩ
12V
VGS
Same Type
as DUT
200nF
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 11. Switching Time Test Circuit & Waveforms
VDS
10V
V
Pulse
Generator
RG
RL
DUT
VDD
VDS
Vin
90%
10%
td(on)
tr
t on
td(off)
t off
tf
5/6
SFS4410
8-SOIC Package Dimension
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
Max.
A
1.35
1.55
1.75
0.053
0.061
0.069
B
0.1
0.175
0.25
0.004
0.007
0.010
C
0.38
0.445
0.510
0.015
0.018
0.020
D
0.19
0.22
0.25
0.007
0.009
0.010
E
4.8
4.9
5
0.189
0.193
0.197
F
3.8
3.9
4
0.150
0.154
0.157
G
1.27 BSC
H
5.8
6
6.2
0.228
0.236
0.244
I
0.5
0.715
0.93
0.020
0.028
0.037
J
0’
4’
8’
0’
4’
8’
K
0.250
0.375
0.05
0.010
0.015
0.020
0.254(Gap plane)
F
E
A
G
6/6
C
B
0.1
H
K × 45°
D
J
I