ETC WS128K48

WS128K48-XG4WX
128Kx48 SRAM MODULE
ADVANCED*
FEATURES
■ 2V Data Retention Devices Available
(Low Power Version)
■ Access Times 17, 20, 25, 35ns
■ Packaging:
• 116 Lead, 40.0mm Hermetic CQFP (Package 504)
■ TTL Compatible Inputs and Outputs
■ Weight
WS128K48-XG4WX - 20 grams typical
■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Power Supply
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
■ Low Power CMOS
■ Organized as 128K x 48, Data Width is user configurable.
PIN CONFIGURATION FOR WS128K48-XG4WX
BLOCK DIAGRAM
WE1 CS1
WE6 CS6
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
116
115
114
113
112
111
110
109
108
107
106
105
104
103
I/O2
I/O1
I/O0
VCC
WE2
CS2
NC
A0
A1
A2
A3
A4
WE1
CS1
NC
NC
NC
A5
A6
A7
A8
A9
NC
NC
NC
VCC
NC
NC
NC
A0-16
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
WEx CSx
1
2
128K x 8
128K x 8
8
NC
NC
NC
NC
NC
GND
NC
NC
NC
NC
NC
NC
NC
NC
GND
I/O47
I/O46
I/O45
I/O44
I/O43
I/O42
I/O41
I/O40
GND
I/O39
I/O38
I/O37
I/O36
I/O35
I/O 0-7
8
I/O 8-15
.....
8
I/O...
6
128K x 8
8
I/O 40-47
PIN DESCRIPTION
I/O0-47
Data Inputs/Outputs
A0-16
Address Inputs
WE1-6
Write Enables
CS1-6
Chip Selects
OE
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
I/O29
I/O30
I/O31
VCC
WE3
CS3
NC
NC
NC
NC
A16
A15
WE4
CS4
OE
CS5
WE5
A14
A13
A12
A11
A10
NC
CS6
WE6
VCC
I/O32
I/O33
I/O34
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
GND
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
WE2 CS2
OE
TOP VIEW
May 1997
1
White Microelectronics • Phoenix, AZ • (602) 437-1520
WS128K48-XG4WX
ABSOLUTE MAXIMUM RATINGS
Parameter
TRUTH TABLE
Symbol
Min
Max
Unit
CS
OE
WE
Mode
Data I/O
Power
TA
-55
+125
°C
°C
H
L
L
L
X
L
X
H
X
H
L
H
Standby
Read
Write
Out Disable
High Z
Data Out
Data In
High Z
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
TSTG
-65
+150
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
7.0
V
Supply Voltage
VCC
-0.5
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Symbol
Conditions
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
100
pF
Input High Voltage
VIH
2.2
V CC + 0.3
V
WE capacitance
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
Input Low Voltage
VIL
-0.3
+0.8
V
CS capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Operating Temp. (Mil.)
TA
-55
+125
°C
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
100
pF
Parameter
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
-17
Min
Max
10
-20
Min
Max
10
-25
Min
Max
10
-35
Min
Max
10
Units
µA
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
10
10
10
µA
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
720
720
720
720
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
120
120
90
90
mA
Output Low Voltage
VOL
IOL = 8mA, V CC = 4.5
0.4
0.4
0.4
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
AC TEST CIRCUIT
AC TEST CONDITIONS
I OL
Parameter
Current Source
VZ
D.U.T.
≈ 1.5V
(Bipolar Supply)
C eff = 50 pf
I OH
Current Source
White Microelectronics • Phoenix, AZ • (602) 437-1520
2
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
V Z is programmable from -2V to +7V.
I OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
V Z is typically the midpoint of VOH and V OL.
I OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
WS128K48-XG4WX
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Symbol
Read Cycle
-17
Min
Read Cycle Time
t RC
Address Access Time
t AA
Output Hold from Address Change
t OH
Chip Select Access Time
t ACS
-20
Max
17
Min
-25
Max
20
Min
25
17
0
35
ns
35
ns
20
ns
0
20
10
ns
25
0
17
Units
35
20
0
-35
Max
ns
25
Output Enable to Output Valid
t OE
Chip Select to Output in Low Z
t CLZ 1
3
3
12
3
15
3
Output Enable to Output in Low Z
t OLZ 1
0
0
0
0
Chip Disable to Output in High Z
t CHZ 1
10
12
12
20
ns
Output Disable to Output in High Z
t OHZ 1
10
12
12
20
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Symbol
Write Cycle
-17
Min
-20
Max
Min
-25
Max
Min
-35
Max
Min
Units
Max
Write Cycle Time
t WC
17
20
25
35
ns
Chip Select to End of Write
t CW
14
15
20
25
ns
Address Valid to End of Write
t AW
15
15
20
25
ns
Data Valid to End of Write
t DW
10
12
15
20
ns
Write Pulse Width
t WP
14
15
20
25
ns
Address Setup Time
t AS
0
0
0
0
ns
Address Hold Time
t AH
0
0
0
0
ns
Output Active from End of Write
t OW 1
3
3
3
4
Write Enable to Output in High Z
t WHZ 1
Data Hold Time
t DH
10
12
0
0
15
0
ns
20
0
ns
ns
1. This parameter is guaranteed by design but not tested.
3
White Microelectronics • Phoenix, AZ • (602) 437-1520
WS128K48-XG4WX
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
tAA
CS
tRC
tCHZ
tACS
ADDRESS
tCLZ
tAA
OE
tOE
tOLZ
tOH
DATA I/O
PREVIOUS DATA VALID
DATA I/O
DATA VALID
tOHZ
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
READ CYCLE 2 (WE = VIH)
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
tAS
tWP
WE
tOW
tWHZ
tDW
DATA I/O
tDH
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
tWC
WS32K32-XHX
ADDRESS
tAS
tAW
tAH
tCW
CS
tWP
WE
tDW
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
tDH
WS128K48-XG4WX
PACKAGE 504:
116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)
5.1 (0.200) MAX
1.27 (0.050)
± 0.1 (0.005)
39.6 (1.56) ± 0.38 (0.015) SQ
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
1.27 (0.050)
REF
0.38 (0.015)
± 0.08 (0.003)
68 PLACES
0.25 (0.010)
± 0.05 (0.002)
38 (1.50) REF
4 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
W S 128K48 - XXX G4W X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
I = Industrial
C = Commercial
-55°C to +125°C
-40°C to +85°C
0°C to + 70°C
PACKAGE TYPE:
G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)
ACCESS TIME (ns)
ORGANIZATION, 128K x 48
SRAM
WHITE MICROELECTRONICS
5
White Microelectronics • Phoenix, AZ • (602) 437-1520