VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE(sat) IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 90 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 5 g TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight ISOPLUS 247 E153432 G C G = Gate, E = Emitter Isolated Backside* E C = Collector * Patent pending Features l DCB Isolated mounting tab Meets TO-247AD package Outline l High current handling capability l MOS Gate turn-on - drive simplicity l Applications Symbol Test Conditions BVCES IC = 1 mA, VGE = 0 V VGE(th) IC = 750 µA, VCE = VGE ICES VCE = VCES VGE = 0 V; note 1 IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 1200 V 2.5 5.0 TJ = 125°C = IC90, VGE = 15 V 35N120B © 2001 IXYS All rights reserved µA mA ±100 nA 3.3 35N120C TJ = 125°C 250 5 2.7 TJ = 125°C 4.0 3.4 V V V V V l Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies l AC motor speed control l DC servo and robot drives l DC choppers l Advantages l l Easy assembly High power density 98818 (04/01) IXGR 35N120B IXGR 35N120C Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC90, VCE = 10 V, Note1 30 40 S 4620 pF 260 pF Cres 90 pF Qg 170 nC 28 nC 57 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 50 ns tri IC = IC90, VGE = 15 V 27 ns td(off) VCE = 0.8 VCES, RG = Roff = 4.7 Ω 35N120B 180 280 ns 35N120C 150 220 ns tfi Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 35N120B 160 320 ns 35N120C 115 190 ns 35N120B 3.8 7.3 mJ 35N120C 3.0 4.2 mJ Eoff td(on) Inductive load, TJ = 125°°C 55 ns tri IC = IC90, VGE = 15 V 31 ns Eon VCE = 0.8 VCES, RG = Roff = 4.7 Ω 2.6 mJ td(off) 35N120B Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, 35N120C higher TJ or increased RG 35N120B 300 ns 220 ns 360 ns 35N120C 260 ns 35N120B 8.0 mJ 35N120C 6.2 tfi Eoff 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 mJ 0.5 K/W RthJC RthCK ISOPLUS 247 OUTLINE 0.15 K/W Note: 1. Pulse test, tp ≤ 300 ms, duty cycle:d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025