SUR2x120-02 Ultra Fast Recovery Epitaxial Diodes Dimensions SOT-227(ISOTOP) SUR2x120-02 VRSM V 200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions VISOL Md Weight Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Unit TVJ=TVJM TC=70oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 150 123 600 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1200 1300 1080 1170 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 7200 7100 5800 5700 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot Millimeter Min. Max. A B Maximum Ratings TVJ=45oC I2t VRRM V 200 Dim. o C TC=25oC 250 W 50/60Hz, RMS _ IISOL<1mA 2500 V~ Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Nm/lb.in. 30 g SUR2x120-02 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM VF IF=120A; TVJ=150oC TVJ=25oC VTO rT Characteristic Values typ. max. 1 0.5 20 mA 0.95 1.10 V For power-loss calculations only 0.7 V TVJ=TVJM 2.1 0.89 RthJC RthCK trr IRM Unit 0.5 1.0 IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC o _ VR=100V; IF=100A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C m K/W 35 50 ns 12 15 A FEATURES APPLICATIONS ADVANTAGES * International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR2x120-02 Ultra Fast Recovery Epitaxial Diodes IF 200 A 175 2.0 150 Qr 1.5 60 A TVJ= 100°C VR = 100V C TVJ= 100°C VR = 100V 50 IRM IF=240A IF=120A IF= 60A 40 125 100 IF=240A IF=120A IF= 60A 1.0 TVJ=150°C 75 30 20 TVJ=100°C 50 0.5 TVJ=25°C 10 25 0 0.0 0.5 1.0 V VF 0.0 10 1.5 Fig. 1 Forward current IF versus VF 0 100 A/us 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 2.0 150 200 400 600 A/us 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 12 TVJ= 100°C VR = 100V ns 0 10 1.5 Kf IF=240A IF=120A IF= 60A IRM 1.0 100 0.5 75 0.0 8 50 100 °C 150 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 800 A/us -diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 4 1.0 2 0.5 0 i 1 2 3 0.2 0.1 0.05 0.02 0.01 1.5 0.0 100 200 300 400 500 A/us diF/dt Constants for ZthJC calculation: D=0.5 ZthJC 6 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 K/W 0.1 0.01 Single Pulse 0.001 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles tfr 2.0 0 0 us 2.5 tfr 50 0 VFR VFR trr 125 Qr 3.0 TVJ= 100°C IF = 120A V Rthi (K/W) ti (s) 0.0725 0.1423 0.2852 0.028 0.092 0.35