VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE(sat) typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 600 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 42.5 29 A A ICM VCEK VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 60 VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 130 W Symbol Conditions VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.7 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.9 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2.9 V V 6.5 V 0.6 1.7 mA mA 100 nA 50 50 270 40 1.4 1.0 ns ns ns ns mJ mJ 16 nF 1.92 0.96 K/W K/W • NPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding • supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger 237 IGBTs 1-4 VKI 50-06P1 Dimensions in mm (1 mm = 0.0394") Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 7 50 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 2.3 K/W K/W 30 19 A A Characteristic Values min. typ. max. 2.57 1.8 2.84 V V B3 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 455 470 3474 485 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 237 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VKI 50-06P1 90 90 A 75 A 75 IC IC VGE= 17V 15V 13V 60 VGE = 17 V 15 V 13 V 60 TJ = 25°C 11V 45 11V 45 30 30 9V 9V 15 15 25T60 0 0 1 2 3 4 5 V TJ = 125°C 25T60 0 0 6 1 2 3 4 VCE Fig. 1 Typ. output characteristics 6 B3 Fig. 2 Typ. output characteristics 90 90 A 75 A 75 IC 5 V VCE IF VCE = 20V 60 60 45 45 30 30 TJ = 125°C TJ = 125°C TJ = 25°C TJ = 25°C 15 15 25T60 0 4 6 8 10 12 25T60 0 0,0 14 V 16 0,5 1,0 1,5 V 2,0 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V A 40 15 IRM VGE 120 ns trr trr 90 30 10 VCE = 300 V IC = 30 A TJ = 125°C VR = 300 V IF = 30 A 20 5 60 30 10 IRM 0 40 80 120 nC 160 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 25T60 0 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 237 25T60 0 3-4 VKI 50-06P1 8 VCE = 300V mJ VGE = ±15V Eon tr R = 33Ω 6 G TVJ = 125°C td(on) 2,0 ns mJ ns 60 1,5 300 t Eon 4 80 Eoff t VCE = 300V VGE = ±15V td(off) 1,0 RG = 33Ω 40 400 Eoff 200 TVJ = 125°C 2 20 0,5 0 0,0 100 tf 25T60 0 0 20 40 25T60 0 60 A 20 40 IC B3 IC Fig. 7 Typ. turn on energy and switching 4 Eon 0 60 A td(on) VCE = 300V mJ VGE = ±15V = 30A I 3 TC = 125°C VJ Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 2,0 80 ns tr 60 t ns 300 t Eoff Eon 2 Eoff 400 td(off) VCE = 300 V mJ V = ±15 V GE IC = 30 A 1,5 TVJ = 125°C 1,0 200 0,5 100 40 1 tf 25T60 0 0 10 20 30 40 50 60 20 70 Ω 80 25T60 0,0 0 10 20 30 40 RG 0 70Ω 80 60 RG Fig. 9 Typ. turn on energy and switching ICM 50 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 80 10 A K/W 60 ZthJC diode 1 IGBT 0,1 40 0,01 20 single pulse 0,001 25T60 0 0 100 200 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved VDI...50-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 237 RG = 33 Ω TVJ = 125°C 4-4