MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE(sat) typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms 670 460 920 A A A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 1.8 W, non repetitive 10 ms RBSOA VGE = ±15 V, TJ = 125°C, RG = 1.8 W Clamped inductive load, L = 100 mH ICM = 800 VCEK < VCES A Ptot IGBT TC = 25°C 2750 W 150 °C -40 ... +150 °C 4000 4800 V~ V~ Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 ● ● ● ● ● ● ● ● ● ● ● ● Advantages ● TJ Tstg VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL £ 1 mA Insulating material: Al2O3 ● Typical Applications ● ● Md Mounting torque (module) (teminals) 2.25-2.75 20-25 2.5-3.7 22-33 Nm lb.in. Nm lb.in. dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 14 9.6 50 mm mm m/s2 Weight Typical 250 8.8 g oz. space and weight savings reduced protection circuits ● AC and DC motor control power supplies welding inverters Data according to a single IGBT/FRED unless otherwise stated. 030 Additional current limitation by external leads © 2000 IXYS All rights reserved 1-4 MID 550-12 A4 MDI 550-12 A4 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 16 mA, VCE = VGE ICES VCE = VCES IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 400 A, VGE = 15 V Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 V 4.5 TJ = 25°C TJ = 125°C 6.5 30 2.3 VCE = 25 V, VGE = 0 V, f = 1 MHz Inductive load, TJ = 125°C IC = 400 A, VGE = ±15 V VCE = 600 V, RG = 1.8 W with heatsink compound Dimensions in mm (1 mm = 0.0394") V 21 mA mA 1.6 µA 2.8 V 26 4 2 nF nF nF 100 60 600 90 64 59 ns ns ns ns mJ mJ 0.09 0.05 K/W K/W Equivalent Circuits for Simulation Free Wheeling Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 80°C IRM trr IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms TJ = 125°C, VR = 600 V RthJC RthJS 2.4 1.9 2.6 2.0 V V 750 460 A A 300 200 A ns 0.18 0.09 K/W K/W Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.3 V; R0 = 3.2 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 1.5 mW Thermal Response Anti Parallel Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 100 A, VGE = 0 V IF = 100 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 80°C IRM trr IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125°C, VR = 600 V RthJC RthJS 2.4 1.9 2.6 2.0 V V 150 95 A A 62 200 A ns 0.9 0.45 K/W K/W IGBT (typ.) Cth1 = 0.90 J/K; Rth1 = 0.049 K/W Cth2 = 2.07 J/K; Rth2 = 0.001 K/W Free Wheeling Diode (typ.) Cth1 = 0.71 J/K; Rth1 = 0.090 K/W Cth2 = 1.30 J/K; Rth2 = 0.002 K/W Additional current limitation by external leads © 2000 IXYS All rights reserved 2-4 MID 550-12 A4 MDI 550-12 A4 900 IC 900 VGE=17V TJ = 25°C A 800 700 13V 600 15V 700 IC 13V 600 11V 11V 500 500 400 400 300 300 9V 200 VGE=17V TJ = 125°C A 800 15V 9V 200 100 100 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 3.5 V Fig. 2 Typ. output characteristics 1600 800 VCE = 20V A 700 IC 2.5 3.0 VCE A 1400 TJ = 25°C TJ = 125°C 600 IF 1200 500 1000 400 800 300 600 200 400 100 200 TJ = 25°C 0 0 5 6 7 8 9 10 0 11 V 1 2 3 4 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 VCE = 600V IC = 400A V A ns IRM VGE 15 trr trr 200 80 10 TJ = 125°C VR = 600V IF = 400A 40 IRM 5 100 550-12 0 0 0 500 1000 1500 QG 2000 nC Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 0 200 400 600 A/ms 800 -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MID 550-12 A4 MDI 550-12 A4 160 Eon mJ Eon 120 160 160 ns mJ VCE = 600V VGE = ±15V 80 t tr Eoff 120 600 t Eoff VCE = 600V VGE = ±15V 80 80 RG = 1.8W TJ = 125°C ns td(off) 120 td(on) 800 400 RG = 1.8W TJ = 125°C 40 40 40 200 tf 0 0 200 400 0 0 800 A 1000 600 0 200 400 600 IC 200 Eon VCE = 600V VGE = ±15V IC = 400A TJ = 125°C mJ Eon td(on) 120 tr 80 40 0 0 2 4 6 8 10 0 A 1000 IC Fig. 7 Typ. turn on energy and switching times versus collector current 160 800 12 W Fig. 8 Typ. turn off energy and switching times versus collector current ns 100 mJ 320 80 400 t 2000 VCE = 600V VGE = ±15V IC = 400A TJ = 125°C Eoff ns Eoff td(off) 1600 t 240 60 1200 160 40 800 80 20 400 0 14 tf 0 0 2 4 6 8 RG 12 0 W 14 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 1000 0.1 A K/W 800 10 0.01 ZthJC ICM 600 diode RG = 1.8W TJ = 125°C VCEK < VCES 400 IGBT 0.001 0.0001 200 single pulse 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 0.00001 0.00001 0.0001 550-12 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4