IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH ... G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 35 A ICM TC = 90°C, tp =1 ms 70 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 µH ICM = 110 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 W, non repetitive 10 µs PC TC = 25°C TO-220 AB G C E G = Gate, C = Collector , ● ● 250 80 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C 300 °C 0.4 - 0.6 0.8 - 1.2 Nm Nm ● ● ● ● ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque TO-220 TO-247 Weight 6 g ● Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V ● IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC TJ = 25°C TJ = 125°C 5 1 V 0.1 mA mA Space savings High power density ● ● ● ● AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies ± 500 nA 2.2 2.7 V 021 = 35 A, VGE = 15 V 3 NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Typical Applications ● = 0.7 mA, VCE = VGE E = Emitter TAB = Collector Advantages ● Symbol C (TAB) Features ● IGBT Diode IXDP ... © 2000 IXYS All rights reserved 1-4 IXDP 35N60 B Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies 1600 pF 150 pF 90 pF 120 nC td(on) 30 ns tr 45 ns 320 ns Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(off) tf IC = 35 A, VGE = 15 V, VCE = 480 V Inductive load, TJ = 125°C IC = 35 A, VGE = ±15 V, VCE = 300 V, RG = 10 W 70 ns Eon 1.6 mJ Eoff 0.8 mJ RthJC RthCH RthCH 0.5 K/W TO 247 Package with heatsink compound TO 220 Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.25 0.5 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A t rr VGE = 0 V, TJ = 125°C 90 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns RthJC 2.1 1.6 2.4 V V 45 25 A A IXDH 35N60 B IXDH 35N60 BD1 TO-247 AD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-220 AB Outline 1.6 K/W Dim. A B C D E F G H J K M N Q R © 2000 IXYS All rights reserved Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 2-4 IXDP 35N60 B 80 A 70 IC 80 VGE= 17V 15V 13V 11V 9V IC 9V 60 50 50 40 40 30 30 20 20 10 10 TJ = 125°C TJ = 25°C 0 0 1 2 3 4 0 0 7 V 5 6 VCE 1 2 3 4 5 6 7 V VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 80 IC 11V VGE= 17V 15V 13V A 70 60 IXDH 35N60 B IXDH 35N60 BD1 A 70 70 A 60 IF 60 50 50 40 40 30 30 20 20 TJ = 125°C TJ = 125°C TJ = 25°C 10 10 VCE = 20V 0 3 4 5 6 7 TJ = 25°C 8 0 0 9 V 10 1 VGE Fig. 3 Typ. transfer characteristics 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 15 trr V 12 25 A ns 20 80 trr IRM VGE 9 15 6 40 10 VCE = 480V IC = 30A 3 TJ = 125°C VR = 300V IF = 15A IRM 5 IXDx35N60B 0 0 0 20 40 60 80 100 120 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 IXDP 35N60 B 4 VCE = 300V VGE = ±15V mJ Eon 2.0 ns mJ 60 1.5 td(on) RG = 10W TJ = 125°C 3 80 t 400 ns td(off) 300 t Eoff Eon 2 Eoff IXDH 35N60 B IXDH 35N60 BD1 1.0 40 200 VCE = 300V VGE = ±15V tr 1 RG = 10W TJ = 125°C 0.5 20 tf 0 10 0.0 10 0 20 30 40 60 A 50 0 20 30 40 IC 2.0 mJ ns 45 Eon Eon 1.5 tr 1.0 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C 0.0 10 15 20 25 30 RG 35 800 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C mJ t Eoff 1.5 30 1.0 15 0.5 ns 600 Eoff t 400 200 W 40 0.0 0 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM td(off) tf 0 5 A 2.0 60 0 60 Fig. 8 Typ. turn off energy and switching times versus collector current td(on) 0.5 50 IC Fig. 7 Typ. turn on energy and switching times versus collector current 100 80 5 10 15 20 25 30 RG 35 W 40 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W ZthJC IGBT 0.1 60 40 0.01 RG = 10 W TJ = 125°C 20 single pulse 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 0.001 10-5 IXDH30N60B 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 4-4