IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE(sat) typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 20 A ICM TC = 90°C, tp =1 ms 40 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH ICM = 60 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 W, non repetitive 10 µs PC TC = 25°C G = Gate, C = Collector , Features ● ● ● ● ● ● ● ● ● NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages ● ● IGBT Diode E = Emitter TAB = Collector 140 50 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C 300 °C Space savings High power density Typical Applications ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ● ● ● ● Md Mounting torque 0.4 - 0.6 Weight Nm 2 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES VCE = 0 V, VGE = ± 20 V VCE(sat) IC 600 V 3 TJ = 25°C TJ = 125°C 5 0.7 V 0.1 mA mA ± 500 nA 2.2 2.8 V 021 = 20 A, VGE = 15 V g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 0.4 mA, VCE = VGE IGES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies © 2000 IXYS All rights reserved 1-4 IXDP 20N60 B IXDP 20N60 BD1 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies 800 pF 85 pF 50 pF 70 nC td(on) 25 ns tr 30 ns 260 ns Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(off) tf IC = 20 A, VGE = 15 V, VCE = 480 V Inductive load, TJ = 125°C IC = 20 A, VGE = ±15 V, VCE = 300 V, RG = 22 W 55 ns Eon 0.9 mJ Eoff 0.4 mJ RthJC RthCH Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.9 K/W K/W 0.5 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V 11 A t rr VGE = 0 V, TJ = 125°C 80 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns RthJC © 2000 IXYS All rights reserved 2.1 1.6 2.4 V V 25 15 A A TO-220 AB Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 2.5 K/W 2-4 IXDP 20N60 B IXDP 20N60 BD1 40 40 VGE= 17V 15V 13V A IC 11V 9V IC 30 20 10 10 1 2 3 V 4 9V TJ = 125°C TJ = 25°C 0 11V 30 20 0 VGE= 17V 15V 13V A 0 0 5 1 2 3 VCE Fig. 1 Typ. output characteristics IC V 4 5 VCE Fig. 2 Typ. output characteristics 40 40 A A 30 IF 30 20 20 TJ = 125°C TJ = 25°C 10 10 TJ = 125°C TJ = 25°C VCE = 20V 0 3 4 5 6 7 8 0 0 9 V 10 1 VGE Fig. 3 Typ. transfer characteristics 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 15 IRM trr V A 25 12 ns trr IRM VGE 80 20 9 15 6 40 10 VCE = 480V IC = 15A 3 TJ = 125°C VR = 300V IF = 10A 5 IXDP20N06B 0 0 0 20 40 60 80 QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved nC 100 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 IXDP 20N60 B IXDP 20N60 BD1 1.5 mJ Eon Eon VCE = 300V VGE = ±15V ns RG = 22W TJ = 125°C 1.0 75 50 t td(on) tr 0.5 0.8 400 mJ ns Eoff 0.6 0.4 10 30 A 20 IC Fig. 7 Typ. turn on energy and switching times versus collector current 1.2 Fig. 8 Typ. turn off energy and switching times versus collector current 1.00 40 ns mJ 30 td(on) Eon tr 0.8 VCE = 300V VGE = ±15V IC = 20A TJ = 125°C 0.6 0.4 0 10 20 30 40 50 60 W mJ t 0.75 Eoff 20 0.50 10 0.25 0 70 800 VCE = 300V VGE = ±15V IC = 20A TJ = 125°C td(off) Eoff A ICM 60 t 400 200 tf 0.00 0 10 20 30 40 50 60 0 W 70 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor RG = 22W TJ = 125°C ns 600 RG 80 100 0 0 IC Eon 1.0 RG = 22W TJ = 125°C tf 0.0 0 30 A 20 200 VCE = 300V VGE = ±15V 25 0.0 10 t Eoff 0.2 0 300 td(off) Fig.10 Typ. turn off energy and switching times versus gate resistor 5 diode K/W 1 IGBT ZthJC 0.1 40 0.01 20 single pulse 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 0.001 10-5 IXDP20N06B 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 4-4