IXYS IXDH30N120D1

IXDH 30N120
IXDH 30N120 D1
IXDT 30N120
IXDT 30N120 D1
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
C
VCES
= 1200 V
= 60 A
IC25
VCE(sat) typ = 2.4 V
C
G
TO-247 AD (IXDH)
G
E
E
IXDH 30N120
IXDT 30N120
G
C
IXDH 30N120 D1
IXDT 30N120 D1
C (TAB)
E
TO--268 AA (IXDT)
Symbol
Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 20 kW
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
60
A
IC90
TC = 90°C
38
A
ICM
TC = 90°C, tp = 1 ms
76
A
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 47 W
Clamped inductive load, L = 30 µH
ICM = 50
VCEK < VCES
A
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 47 W, non repetitive
10
µs
PC
TC = 25°C
G
E
G = Gate,
C = Collector ,
Features
●
●
●
●
●
●
IGBT
Diode
300
135
W
W
●
TJ
-55 ... +150
°C
●
Tstg
-55 ... +150
°C
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
●
Mounting torque
1.1/10 Nm/lb.in.
Weight
6
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard packages
Advantages
●
Md
C (TAB)
E = Emitter
TAB = Collector
●
g
Space savings
High power density
IXDT:
surface mountable high power package
Typical Applications
●
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
●
●
●
V(BR)CES
VGE = 0 V
VGE(th)
IC = 1 mA, VCE = VGE
ICES
VCE = VCES
1200
V
4.5
TJ = 25°C
TJ = 125°C
VCE = 0 V, VGE = ± 20 V
VCE(sat)
IC = 30 A, VGE = 15 V
2.5
V
1.5 mA
mA
± 500 nA
2.4
2.9
V
031
IGES
6.5
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
© 2000 IXYS All rights reserved
1-4
IXDH 30N120
IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
IC = 30 A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tr
td(off)
tf
Inductive load, TJ = 125°C
IC = 30 A, VGE = ±15 V,
VCE = 600 V, RG = 47 W
1650
pF
250
pF
110
pF
120
nC
100
ns
70
ns
500
ns
70
ns
Eon
4.6
mJ
Eoff
3.4
mJ
RthJC
RthCK
TO-247 AD Outline
0.42 K/W
Package with heatsink compound
Reverse Diode (FRED) [D1 version only]
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Conditions
VF
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V, TJ = 125°C
IF
TC = 25°C
TC = 90°C
IRM
IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V
trr
VGE = 0 V, TJ = 125°C
trr
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
RthJC
2.5
2.0
2.7
V
V
60
35
A
A
20
A
200
ns
40
ns
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 K/W
TO-268 AA Outline
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-4
IXDH 30N120
IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
60
60
VGE=17V
TJ = 25°C
A
50
15V
13V
IC
VGE=17V
TJ = 125°C
15V
A
50
IC
40
13V
40
11V
11V
30
30
20
20
9V
9V
10
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0 V
0.5
1.0
1.5
2.0
VCE
Fig. 1 Typ. output characteristics
60
IC
3.5 V
Fig. 2 Typ. output characteristics
80
VCE = 20V
TJ = 125°C
A70
TJ = 25°C
A
50
2.5 3.0
VCE
IF
40
60
TJ = 25°C
50
40
30
30
20
20
10
10
0
0
5
6
7
8
9
10
0
11 V
1
2
Fig. 3 Typ. transfer characteristics
V
4
Fig. 4 Typ. forward characteristics of
free wheeling diode
300
60
20
V VCE = 600V
IC
3
VF
VGE
= 25A
A
VGE 15
ns
IRM
trr
trr
200
40
10
20
TJ = 125°C
VR = 600V
IF = 30A
IRM
5
100
IXDH30N120
0
0
0
20
40
60
80
100 120 140 nC
QG
Fig. 5 Typ. turn on gate charge
© 2000 IXYS All rights reserved
0
200
400
600
800
A/ms
-di/dt
0
1000
Fig. 6 Typ. turn off characteristics of
free wheeling diode
3-4
IXDH 30N120
IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
14
140
6
12
mJ
ns
120
mJ
5
Eon 10
100
8
VCE = 600V
VGE = ±15V
tr
RG = 47W
TJ = 125°C
4
Eon
2
0
0
Eoff
Eoff
td(off)
400 t
4
10
20
30
20
1
0
0
mJ
10
Eon
8
200
100
tf
0
0
10
20
30
40
50 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8 Typ. turn off energy and switching
times versus collector current
5
240
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
300
RG = 47W
TJ = 125°C
2
40
50 A
40
VCE = 600V
VGE = ±15V
3
60
IC
12
ns
500
80
td(on)
6
t
600
td(on) ns
Eon
180
tr
t
6
1500
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
mJ
4
Eoff
ns
td(off)
1200
Eoff
t
3
900
2
600
1
300
120
4
60
2
0
0
40
80
120
160
RG
200
W
0
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
ICM
10
A
50
K/W
1
RG = 47W
TJ = 125°C
VCEK < VCES
30
40
80
120
160
RG
200
0
W 240
Fig.10 Typ. turn off energy and switching
times versus gate resistor
60
40
tf
0
0
240
diode
ZthJC
IGBT
0.1
0.01
20
0.001
10
0
0
200
400
600
800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
© 2000 IXYS All rights reserved
single pulse
0.0001
0.00001 0.0001
IXDH30N120
0.001
0.01
0.1
s
1
t
Fig. 12 Typ. transient thermal impedance
4-4