IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1 C (TAB) E TO--268 AA (IXDT) Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 38 A ICM TC = 90°C, tp = 1 ms 76 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 µH ICM = 50 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive 10 µs PC TC = 25°C G E G = Gate, C = Collector , Features ● ● ● ● ● ● IGBT Diode 300 135 W W ● TJ -55 ... +150 °C ● Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ● ● Mounting torque 1.1/10 Nm/lb.in. Weight 6 NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages ● Md C (TAB) E = Emitter TAB = Collector ● g Space savings High power density IXDT: surface mountable high power package Typical Applications ● Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● ● ● ● V(BR)CES VGE = 0 V VGE(th) IC = 1 mA, VCE = VGE ICES VCE = VCES 1200 V 4.5 TJ = 25°C TJ = 125°C VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 30 A, VGE = 15 V 2.5 V 1.5 mA mA ± 500 nA 2.4 2.9 V 031 IGES 6.5 AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies © 2000 IXYS All rights reserved 1-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 30 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 W 1650 pF 250 pF 110 pF 120 nC 100 ns 70 ns 500 ns 70 ns Eon 4.6 mJ Eoff 3.4 mJ RthJC RthCK TO-247 AD Outline 0.42 K/W Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V trr VGE = 0 V, TJ = 125°C trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V RthJC 2.5 2.0 2.7 V V 60 35 A A 20 A 200 ns 40 ns Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 K/W TO-268 AA Outline Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 60 IC 3.5 V Fig. 2 Typ. output characteristics 80 VCE = 20V TJ = 125°C A70 TJ = 25°C A 50 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics V 4 Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A VGE 15 ns IRM trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 30A IRM 5 100 IXDH30N120 0 0 0 20 40 60 80 100 120 140 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 14 140 6 12 mJ ns 120 mJ 5 Eon 10 100 8 VCE = 600V VGE = ±15V tr RG = 47W TJ = 125°C 4 Eon 2 0 0 Eoff Eoff td(off) 400 t 4 10 20 30 20 1 0 0 mJ 10 Eon 8 200 100 tf 0 0 10 20 30 40 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C 300 RG = 47W TJ = 125°C 2 40 50 A 40 VCE = 600V VGE = ±15V 3 60 IC 12 ns 500 80 td(on) 6 t 600 td(on) ns Eon 180 tr t 6 1500 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C mJ 4 Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 200 W 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 10 A 50 K/W 1 RG = 47W TJ = 125°C VCEK < VCES 30 40 80 120 160 RG 200 0 W 240 Fig.10 Typ. turn off energy and switching times versus gate resistor 60 40 tf 0 0 240 diode ZthJC IGBT 0.1 0.01 20 0.001 10 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.0001 0.00001 0.0001 IXDH30N120 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4