VDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 ID25 RDS(on) 58 A 85 mΩ Ω Ω 61 A 75 mΩ 500 V 500 V N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 TC = 25°C I DM TC = 25°C Pulse width limited by TJM 58 61 232 244 A A A A 625 W PD IXTN IXTN IXTN IXTN 58N50 61N50 58N50 61N50 T C = 25°C TJ -40 ... +150 °C TJM 150 °C Tstg -40 ... +150 °C VISOL Md 50/60 Hz, RMS Symbol V~ t = 1s 3000 V~ Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in. 30 V GS = 0 V, ID = 5 mA 500 VGS(th) V DS = V GS, ID = 12 mA 1.7 I GSS V GS = ±20 V DC, VDS = 0 I DSS V DS = 0.8 V DSS VGS = 0 V RDS(on) TJ = 25°C TJ = 125°C V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % © 1997 IXYS All rights reserved g Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. V DSS 58N50 61N50 S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features 2500 Test Conditions S G t = 1 minute Weight miniBLOC, SOT-227 B E153432 V 4.0 V ±200 nA 500 µA 2 mA 85 75 mΩ mΩ • • • • • International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (<100 pF) - reduced RFI • Low package inductance (< 10 nH) - easy to drive and to protect • Aluminium Nitride Isolation - increased current ratings Applications • • • • • DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies Advantages • Easy to mount • Space savings • High power density 95501B(4/97) IXTN 58N50 IXTN 61N50 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test Ciss 20 30 S 11000 pF 1550 pF Crss 225 pF td(on) 30 ns Coss VGS= 0 V, V DS = 25 V, f = 1 MHz tr VGS = 10 V, V DS = 0.5 VDSS , ID = 50 A 60 ns td(off) RG = 1 Ω (External) 100 ns tf 50 ns Qg 420 nC 55 nC 160 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, I D = ID2 Qgd RthJC Source-Drain Diode Symbol Test Conditions IS VGS = 0 V I SM VSD M4 screws (4x) supplied Dim. 0.20 K/W 0.05 RthCK miniBLOC, SOT-227 B K/W Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. 61 A Repetitive; pulse width limited by TJM 244 A IF = IS, VGS = 0 V, 1.5 V 800 ns Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D E F G H J K 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O P Q R S T U 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % trr IF = 50A, di/dt = -100 A/µs, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025