IXYS IXTP1N100

Advanced Technical Information
High Voltage
MOSFET
IXTA 1N100
IXTP 1N100
VDSS
ID25
RDS(on)
= 1000 V
= 1.5 A
=
11 Ω
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
1.5
A
IDM
TC = 25°C, pulse width limited by TJM
6
A
1.5
A
IAR
EAR
TC = 25°C
6
mJ
EAS
TC = 25°C
200
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
3
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
D (TAB)
S
TO-263 AA (IXTA)
G
S
D (TAB)
TC = 25°C
TJ
GD
V/ns
54
PD
TO-220AB (IXTP)
Mounting torque
1.13/10 Nm/lb.in.
Weight
4
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
g
°C
300
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ High voltage, Low RDS (on) HDMOSTM
process
Ÿ Rugged polysilicon gate cell structure
Ÿ Fast switching times
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 25 µA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 1.0A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
2.5
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
4.5
V
±100
nA
25
500
µA
µA
11
Ω
Applications
Ÿ Switch-mode and resonant-mode
power supplies
Ÿ Flyback inverters
Ÿ DC choppers
Ÿ High frequency matching
Advantages
Ÿ Space savings
Ÿ High power density
98545A (11/99)
1-2
IXTA 1N100
IXTP 1N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 1.0A, pulse test
1.5
S
480
pF
45
pF
C rss
15
pF
td(on)
18
ns
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
0.8
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
19
ns
td(off)
RG
20
ns
tf
18
ns
Qg(on)
23
nC
4.5
14
Qgs
= 18Ω, (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
Qgd
RthJC
RthCK
2.3
(IXTP)
Source-Drain Diode
Symbol
Test Conditions
0.50
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
nC
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
nC
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
K/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
K/W
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
710
TO-263 AA (IXTA) Outline
1.5
A
6
A
1.8
V
TO-220 AB (IXTP) Outline
ns
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
2-2