Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM IAR TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C 250 75 1000 90 A A A A EAR EAS TC = 25°C TC = 25°C 80 4.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 730 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 10 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 µA IGSS V GS = ±20 V DC, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 90 A Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved Nm/lb.in. 100 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 50 1 µA mA TO-264 AA (IXTK) D (TAB) G D G = Gate S = Source S D = Drain Tab = Drain Features •Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •International standard package •Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies •DC-DC Converters •Linear Regulators Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density 5 mΩ DS99022(03/03) IXTK 250N10 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 90 A, pulse test 75 Ciss S 7800 pF 3200 pF C rss 1300 pF td(on) 35 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 110 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A td(off) RG = 1.0 Ω (External) tf ns ns 55 ns 390 Qg(on) Qgs 40 120 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 60 nC 180 nC 0.17 K/W RthJC RthCK 0.15 Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = 90 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 30A, -di/dt = 100 A/µs, VR = 50 V Qrr 250 A 1000 A 1.2 V 150 ns 2 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343