IXYS IXTK120N25P

PolarHTTM
Power MOSFET
IXTK 120N25P
VDSS = 250 V
ID25 = 120 A
RDS(on) ≤ 24 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
250
250
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25° C
120
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
300
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
60
mJ
EAS
TC = 25° C
2.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
700
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
TO-264 (IXTK)
G
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
Weight
10
g
Advantages
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 500µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
D
l
l
Easy to mount
Space savings
High power density
V
TJ = 125° C
19
5.0
V
±200
nA
25
250
µA
µA
24
mΩ
DS99175E(12/05)
IXTK 120N25P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
50
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
70
S
8000
pF
1300
pF
220
pF
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
33
ns
130
ns
33
ns
Dim.
185
nC
50
nC
80
nC
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
tf
Qg(on)
Qgs
TO-264 (IXTK) Outline
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
0.18°C/W
RthCS
°C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
120
A
ISM
Repetitive
300
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
200
3.0
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTK 120N25P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
250
VGS = 10V
9V
110
100
9V
200
90
175
80
I D - Amperes
I D - Amperes
VGS = 10V
225
8V
70
60
50
7V
40
30
150
8V
125
100
7V
75
50
20
6V
6V
25
10
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
V D S - Volts
Fig. 3. Output Characteristics
@ 150ºC
14
16
18
20
90
8V
80
7V
70
60
50
6V
40
30
20
2.2
1.9
I D = 120A
1.6
I D = 60A
1.3
1
0.7
5V
10
VGS = 10V
2.5
R D S ( o n ) - Normalized
100
I D - Amperes
12
2.8
VGS = 10V
9V
110
0
0.4
0
1
2
3
4
5
V D S - Volts
6
7
8
-50
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
-25
0
25
50
75
100
TJ - Degrees Centigrade
125
150
Fig. 6. Drain Current vs. Case
Tem perature
3.8
90
TJ = 150ºC
3.4
External Lead Current Limit
80
70
3
I D - Amperes
R D S ( o n ) - Normalized
10
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
120
2.6
VGS = 10V
2.2
1.8
1.4
8
V D S - Volts
VGS = 15V
60
50
40
30
20
TJ = 25ºC
1
10
0
0.6
0
30
60
90
120
150
180
I D - Amperes
© 2006 IXYS All rights reserved
210
240
270
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTK 120N25P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
210
110
25 ºC
90
150 ºC
80
90
70
40
60
50
g
TJ = 150 ºC
60
- Siemens
120
fs
150
I D - Amperes
TJ = -40 ºC
100
180
25 ºC
30
-40 ºC
30
20
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
0
30
60
90
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
150
180
210
Fig. 10. Gate Char ge
10
350
V DS = 125V
9
300
I D = 60A
8
250
I G = 10m A
7
V G S - Volts
I S - Amperes
120
I D - A mperes
200
150
5
4
3
TJ = 150 ºC
100
6
2
50
TJ = 25 ºC
1
0
0
0.2
0.4
0.6
0.8
1
V S D - V olts
1.2
1.4
0
1.6
40
60
Q
80
G
100 120 140 160 180 200
- nanoCoulombs
Fig. 12. Forw ar d-Bias
Safe Ope r ating Ar e a
Fig. 11. Capacitance
10000
1000
R DS(on) Lim it
C is s
25µs
1000
I D - Amperes
Capacitance - picoFarads
20
C oss
100
100µs
1m s
10
10m s
DC
TJ = 175 ºC
f = 1MH z
TC = 25 ºC
C rs s
100
1
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXTK 120N25P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.1
1
10
Pu ls e W id th - m illis e c o n d s
© 2006 IXYS All rights reserved
100
1000