IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20 V V GSM Transient I D25 TC = 25°C I DM TC = 25°C (1) PD TC = 25°C V 58 61 232 244 A A A A 625 W -40 ... +150 °C TJM 150 °C Tstg -40 ... +150 °C t = 1 minute 2500 V~ t = 1s 3000 V~ IXFN IXFN IXFN IXFN TJ Md 50/60 Hz, RMS 58N50 61N50 58N50 61N50 Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in. Weight 30 g EAR 75 mJ Symbol Test Conditions V DSS VGS = 0 V, I D = 5 mA 500 V GS(th) VDS = V GS, ID = 12 mA 1.7 I GSS VGS = ±20 V DC, VDS = 0 I DSS VDS = 0.8 V DSS VGS = 0 V R DS(on) RDS(on) 58A 61A 85 mΩ 75 mΩ Maximum Ratings ±30 VISOL ID25 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 58N50 61N50 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % I©1996 XYS reserves IXYS Corporation. the right to change All rights limits, reserved. test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 V 4.0 V ±200 nA 500 µA 2 mA 85 mΩ 75 mΩ miniBLOC, SOT-227 B 1 2 4 3 1 = Source 3 = Drain 2 = Gate 4 = Source Features • International standard package • Isolation voltage 3000V (RMS) • Low R DS (on) HDMOSTM processl • Rugged polysilicon gate cell structure • Low drain-to-case capacitance (<60 pF) - reduced RFI • Low package inductance (< 10 nH) - easy to drive and to protect • Aluminium Nitride Isolation - increased current ratings Applications • DC choppers • AC motor speed controls • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched mode and resonant mode power supplies Advantages • Easy to mount • Space savings • High power density 92810G (10/95) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFN 58N50 IXFN 61N50 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 20 30 S 11 nF Coss 1550 pF Crss 225 pF 30 ns td(on) VGS = 10 V, VDS = 0.5 VDSS , ID = 50 A tr RG = 1 Ω (External) 60 ns td(off) 100 ns tf 50 ns Qg 420 nC Qgs VGS = 10 V, VDS = 0.5 VDSS , ID = ID25 55 nC Qgd 160 nC RthJC Package Outline 0.20 K/W 0.05 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 I SM VSD K/W Ratings and Characteristics (T J = 25°C unless otherwise specified) Min. Typ. Max. 61 A Repetitive; pulse width limited by TJM 244 A IF 1.5 V 250 ns = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % trr Notes: IF = 50A, di/dt = -100 A/µs, VR = 100 V 1. Pulse width limited by max TJ. 2. IF < IDM, di/dt < 100 A/µs, VDD < VDSS, TJ < 150ºC, RG = 2Ω. The data supplied herein reflects the pre-production objective specification and characterization from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025