KDR732E SEMICONDUCTOR SCHOTTKY BARRIER TYPE DIODE (TWIN TYPE, CATHODE COMMON) TECHNICAL DATA HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. E B FEATURES D H G A 2 Low Forward Voltage : VF max=0.55V C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + D Fast reverse recovery time (trr max=10nS) E G H Low switching noise. 0.50 _ 0.05 0.13 + J Low leakage current and high reliablility due to J C Highly reliable planar structure. Ultrasmall-sized package permtting KDR732 applied sets to be made small and slim. 3 1. ANODE 1 2. ANODE 2 3. CATHODE MAXIMUM RATING (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT VRRM 30 V VRSM 35 V IO 70 mA Surge Forward Current IFSM 2 A Junction Temperature Tj 125 Tstg -55 125 Repetitive (Peak) Reverse Voltage Non-Repetitive (Peak) Reverse Surge Voltage Average Forward Current Storage Temperature Range 1 2 ) ESM Marking UZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=20 A 30 - - V Forward Voltage VF IF=70mA - - 0.55 V Reverse Current IR VR=15V - - 5 A Total Capacitance CT VR=10V, f=1MHz - 3.0 - pF Reverse Recovery Time trr IR=IF=10mA - - 10 nS 2003. 2. 25 Revision No : 1 1/2 KDR732E I R - VR I F - VF REVERSE CURRENT I R (µA) 50 30 Ta= 125 C Ta= 25 C FORWARD CURRENT I F (mA) 200 100 10 5 3 Ta=125 C 100 Ta=100 C 10 Ta=75 C Ta=50 C 1 Ta=25 C 0.1 1 0.01 0.5 0.2 0.6 0.4 0.8 1.0 5 10 15 20 25 30 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C - VR IS - t 20 f=1MHz 10 5 3 1 0.5 0 1 3 5 10 30 50 SURGE FORWARD CURRENT I S(peak) (A) 0 INTERTERMINAL CAPACITANCE C (pF) 1K 35 2.8 Current waveform 2.4 50Hz sine wave 1s 2.0 20ms t 1.6 1.2 0.8 0.4 0 0.01 0.03 0.1 REVERSE VOLTAGE VR (V) 0.3 1 3 TIME t (S) t rr TEST CIRCUIT 5V 2003. 2. 25 1mA 10mA 10µs 10mA 10Ω 100Ω 50Ω Duty < = 10% Revision No : 1 t rr 2/2