SEMICONDUCTOR KTD1691 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A B D C E FEATURES High Power Dissipation : PC=1.5W(Ta=25 ) F Complementary to KTB1151. G H DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25 CHARACTERISTIC K ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V DC IC 5 Pulse * ICP 8 IB 1 Collector Current Base Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle M O N 1 A 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE A 1.5 PC L MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 W 20 Tj 150 Tstg -55 150 50% ELECTRICAL CHARACTERISTICS (Ta=25 SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A hFE 1 VCE=1V, IC=0.1A 60 - - hFE2 (Note) VCE=1V, IC=2A 160 - 400 hFE 3 VCE=2V, IC=5A 50 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.1 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=0.2A - 0.9 1.2 V OUTPUT - 0.2 1 5Ω CHARACTERISTIC ) - 1.1 2.5 VCC =10V - 0.2 1 DC Current Gain * * ton Turn On Time Switching Time INPUT IB2 IB1=-I B2 =0.2A tf DUTY CYCLE < = 1% I B2 S 50 S, Duty Cycle 2% Pulse Note) hFE(2) Classification : 2003. 7. 24 I B1 IB1 tstg Storage Time Fall Time * Pulse test : PW 20µsec O:160 320, Revision No : 3 Y:200 400. 1/3 KTD1691 d T - TC Pc - Ta 160 1 Tc=Ta INFINITE HEAT SINK 1 20 2 NO HEAT SINK 15 10 5 140 I C DERATING d T (%) POWER DISSIPATION PC (W) 25 120 100 S/b Lim Di ited ssi pa tio nL im ite d 80 60 40 20 2 0 0 50 100 150 0 200 0 S 10 mS * * 0 ip mS ati on Li m ite d 20 * SINGLE NONREPETITVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.3 0.1 1 3 5 S/ bL im ite d 10 30 50 8 6 4 2 0 0 100 40 20 I C - VCE I B =80mA 4 I B=60mA I B=40mA mA I B =30 I B =20mA 200 m 6 I B =10mA 2 I B =0mA 0 0 0.4 0.8 1.2 1.6 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 7. 24 DC CURRENT GAIN h FE A 0m 10 I B= A IB IB = COLLECTOR CURRENT I C (A) mA 50 80 100 h FE - I C 10 =1 60 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 8 175 200 150 VCEO (SUS) ss COLLECTOR CURRENT I C (A) Di VCEO MAX. COLLECTOR CURRENT I C (A) 2m 1 0.5 125 10 10 I (Pulse) MAX. C 3 100 REVERSE BIAS SAFE OPERATING AREA SAFE OPERATING AREA I C (DC) MAX. 75 50 CASE TEMPERATURE Tc ( C) AMBIENT TEMPERATURE Ta ( C) 5 25 Revision No : 3 2.0 1k 500 300 VCE =2V VCE =1V 100 50 30 10 5 3 1 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2/3 KTD1691 V BE(sat), V CE(sat) - I C STATURATION VOLTAGE VBE(sat), VCE(sat) (V) 10 I C /I B =10 5 3 VBE(sat) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 VCE(sat) 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 3/3