TI TPD2EUSB30DRTR

TPD2EUSB30
www.ti.com
SLVSA12 – NOVEMBER 2009
2-CHANNEL ESD SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0 INTERFACE
Check for Samples: TPD2EUSB30
FEATURES
APPLICATIONS
•
•
•
•
•
•
1
•
•
•
•
•
•
•
0.05-pF Matching Capacitance Between the
Differential Signal Pair
Single-Pair Differential Lines to Protect the
Differential Data and Clock Lines of the
USB3.0, eSATA, or LVD Interface
Flow-Through Pin Mapping for the High-Speed
Lines Ensures Zero Additional Skew Due to
Board Layout While Placing ESD-Protection
Chip Near the Connector
Supports Data Rates in Excess of 6 Gbps
ESD Protection Meets or Exceeds
IEC61000-4-2 (Level 4)
5-A Peak Pulse Current (8/20 μs Pulse) for D+,
D– Lines
Industrial Temperature Range: –40°C to 85°C
Space-Saving DRT Package
Notebooks
Set-Top Boxes
DVD Players
Media Players
Portable Computers
DRT PACKAGE
(TOP VIEW)
D+
1
3
D–
GND
2
DESCRIPTION/ORDERING INFORMATION
The TPD2EUSB30 provides 2 ESD clamp circuits with flow-through pin mapping for ease of board layout. This
device has been designed to protect sensitive components which are connected to ultra high-speed data and
transmission lines. The TPD2EUSB30 offers protection from stress caused by ESD (electrostatic discharge). This
device also offers 5 A (8/20 μs) peak pulse current ratings per IEC 61000-4-5 (lightning) specification.
The monolithic silicon technology allows matching between the differential signal pairs. The less than differential
0.05-pF capacitance ensures that the differential signal distortion due to added ESD clamp remains minimal. The
0.7-pF line capacitance is suitable for high-speed data rate (in excess of 6 Gbps).
The TPD2EUSB30 conforms to IEC61000-4-2 (Level 4) ESD protection. The TPD2EUSB30 is offered in space
saving DRT (1 mm × 1 mm) package.
The TPD2EUSB30 is characterized for operation over ambient air temperature range of –40°C to 85°C.
ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
PACKAGE
SOT (3-DRT)
(1) (2)
Tape and reel
ORDERABLE PART NUMBER
TPD2EUSB30DRTR
TOP-SIDE MARKING
5PX
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPD2EUSB30
SLVSA12 – NOVEMBER 2009
www.ti.com
CIRCUIT DIAGRAMS
DRT Circuit
D–
D+
GND
TERMINAL FUNCTIONS
TERMINAL
NAME
DRT
PIN NO.
TYPE
D+, D-
1, 2
ESD port
GND
3
GND
DESCRIPTION
High-speed ESD clamp, provides ESD protection to the high-speed differential data lines
Ground
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
IO voltage tolerance
D+, D– pins
TA
Operating free-air temperature range
Tstg
Storage temperature range
ESD protection
(1)
MIN
MAX
0
6
–40
85
–65
UNIT
°C
125
°C
IEC 61000-4-2 Contact Discharge
D+, D– pins
±8
kV
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±8
kV
Peak pulse current (tp = 8/20 μs)
D+, D– pins
5
A
Peak pulse power (tp = 8/20 μs)
D+, D– pins
45
W
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
VRWM
Reverse stand-off voltage
D+,D– pins to ground
Vclamp
Clamp voltage
D+,D– pins to ground,
IIO
Current from IO port to supply pins
VIO = 2.5 V, ID = 8 mA
VD
Diode forward voltage
D+,D– pins,
lower clamp diode,
VIO = 2.5 V, ID = 8 mA
Rdyn
Dynamic resistance
D+,D– pins,
I=1A
CIO
IO capacitance
D+,D– pins
VIO = 2.5 V
VBR
Break-down voltage
IIO = 1 mA
2
TYP
Submit Documentation Feedback
7
UNIT
5.5
V
8
V
0.01
0.1
μA
0.8
0.95
V
IIO = 1 A
0.6
MAX
1
Ω
0.7
pF
V
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
TPD2EUSB30
www.ti.com
SLVSA12 – NOVEMBER 2009
TYPICAL OPERATING CHARACTERISTICS
1.20E-12
10
TA = 25°C
5
1.10E-12
9.00E-13
Leakage Current (pA)
Capacitnace (Farads)
0
1.00E-12
DBZ Package
8.00E-13
DRT Package
7.00E-13
–5
–10
–15
D–
–20
D+
–25
–30
6.00E-13
5.00E-13
0.0
VIO = 2.5 V
–35
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
–40
Figure 1. IO Capacitance vs IO Voltage
11
55
10
5.0
50
4.5
45
4.0
40
3.5
35
3.0
30
25
Current (A)
2.0
20
1.5
15
1.0
10
Power (W)
9
8
5
0
10
15
20
25
30
Time (ms)
35
40
45
6
5
3
2
1
0
0.0
7
4
5
0.5
50
0
0
Figure 3. Peak Pulse Waveforms
100
20
90
10
80
0
70
-10
60
-20
50
40
30
-70
0
-80
-10
-90
-20
75
100
Time (ns)
125
150
20
Voltage (V)
25
30
35
40
-50
-60
50
15
-40
10
25
10
-30
20
0
5
Figure 4. D+,D– Transmission Line Pulser Plot (100 ns Pulse, 10
ns Rise Time)
Amplitude (V)
Amplitude (V)
Current (A)
IPP (A)
60
PPP (W)
Measured at one IO,
the other IO open
2.5
85
Figure 2. Leakage Current vs Temperature
6.0
5.5
55
25
Temperature (°C)
–40
Voltage (V)
175
Figure 5. IEC Clamping Waveforms (8 kV Contact)
200
-100
0
25
50
75
100
Time (ns)
125
150
175
200
Figure 6. IEC Clamping Waveforms (–8 kV Contact)
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
3
TPD2EUSB30
SLVSA12 – NOVEMBER 2009
www.ti.com
APPLICATION INFORMATION
Layout Guide with TPD2EUSB30DRTR
Refer to Figure 7, the TPD2EUSB30DRTR is offered in space saving DRT package. The DRT package is a
1mm* 1mm package with flow-through pin-mapping for the high-speed differential lines. It is recommended to
place the DRT package right next to the USB 3.0 connector. The GND pin should connected to GND plane of the
board through a large VIA. If a dedicated GND plane is not present right underneath, it is recommended to route
to the GND plane through a wide trace. The current associated with IEC ESD stress can be in the range of
30Amps or higher momentarily. A good, low impedance GND path ensures the system robustness against IEC
ESD stress.
The TPD2EUSB30 can provide system level ESD protection to the high-speed differential ports (>6 Gbps data
rate). The flow-through package offers flexibility for board routing with traces up to 15 mills wide. It allows the
differential signal pairs couple together right after they touch the ESD ports (pin 1 and pin 2) of the
TPD2EUSB30.
TX+
VBUS
TPD2EUSB30
TXD-
1-mm
D-
GND
USB 3.0
Host/ Controller/ PHY
GND
8-mm
D+
D+
RX+
GND
1-mm
RX-
Figure 7. Layout Guide with the TPD2EUSB30 at the USB3.0 Class A connector
TPD2EUSB30 Eye Pattern Test Setup
See Figure 9 for a demonstration of the TPD2EUSB30 performance the lab set-up. Figure 8 shows a lab board
that was designed to demonstrate the degradation of the eye pattern quality with and without the TPD2EUSB30
in the USB 3.0 signal path. Figure 10 shows that there is only ~2 ps jitter penalty to the differential signal when
the TPD2EUSB30 device was added in the signal path
Eye Pattern
Measurement Point
Pattern Generator
36” Lossy Transmission Line
USB3.0 Receiver PHY
Figure 8. Measurement Setup to collect the Eye Pattern on a Reference Board with TPD2EUSB30
4
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
TPD2EUSB30
www.ti.com
SLVSA12 – NOVEMBER 2009
Eye Pattern
Measurement Point
Pattern Generator
36” Lossy Transmission Line
TPD2EUSB30
USB3.0 Receiver PHY
Figure 9. Measurement Setup to collect the Eye Pattern on a Reference Board with TPD2EUSB30
Figure 10. Lab Setup for the Eye-Pattern Measurement with TPD2EUSB30
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
5
TPD2EUSB30
SLVSA12 – NOVEMBER 2009
www.ti.com
Figure 11. Output eye diagram without TPD2EUSB30 (Figure 8 Setup, 5 Gbps Data Rate)
6
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
TPD2EUSB30
www.ti.com
SLVSA12 – NOVEMBER 2009
Figure 12. Output eye diagram with the TPD2EUSB30 (Figure 9 Setup, 5 Gbps Data Rate)
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30
7
PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TPD2EUSB30DRTR
ACTIVE
SOT
DRT
Pins Package Eco Plan (2)
Qty
3
3000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
CU NIPDAU
MSL Peak Temp (3)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
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incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPD2EUSB30DRTR
Package Package Pins
Type Drawing
SOT
DRT
3
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
3000
180.0
8.4
Pack Materials-Page 1
1.16
B0
(mm)
K0
(mm)
P1
(mm)
1.16
0.63
4.0
W
Pin1
(mm) Quadrant
8.0
Q3
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPD2EUSB30DRTR
SOT
DRT
3
3000
202.0
201.0
28.0
Pack Materials-Page 2
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