DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION Part No. 2SA1008 FEATURES Package TO-220AB (TO-220AB) • Low collector saturation voltage • Fast switching speed • Complementary transistor: 2SC2331 ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter Symbol VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V −2.0 A −4.0 A Collector current (DC) IC(DC) Collector current (pulse) IC(pulse) Base current (DC) Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C −1.0 A 15 W 1.5 W 150 −55 to +150 °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14866EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1008 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) IC = −1.0 A, IB1 = −0.1 A, L = 1 mH Conditions −100 MIN. V Collector to emitter voltage VCEX(SUS)1 IC = −1.0 A, IB1 = −IB2 = −0.1 A, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V Collector to emitter voltage VCEX(SUS)2 IC = −2.0 A, IB1 = −0.2 A, IB2 = 0.1 A, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V MAX. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 A −10 µA Collector cutoff current ICER VCE = −100 V, RBE = 51 Ω, TA = 125°C −1.0 Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10 mA µA Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 A −10 µA DC current gain hFE1 VCE = −5.0 V, IC = −0.1 ANote 40 DC current gain hFE2 VCE = −5.0 V, IC = −1.0 ANote 40 200 −0.6 V Collector saturation voltage VCE(sat) IC = −1.0 A, IB = −0.1 ANote Base saturation voltage VBE(sat) IC = −1.0 A, IB = −0.1 ANote −1.5 IC = −1.0 A, RL = 50 Ω, IB1 = −IB2 = −0.1 A, VCC ≅ −50 V Refer to the test circuit. 0.5 V µs 1.5 µs 0.5 µs Turn-on time ton Storage time tstg Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 40 to 80 60 to 120 100 to 200 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D14866EJ2V0DS 2SA1008 2.0 mm aluminum board, no insulating board, silicon grease coating With infinite heatsink (TC = 25 °C) Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Ambient Temperature TA (°C) Derating dT (%) Transient Thermal Resistance rth(j-c) (°C/W) Collector to Emitter Voltage VCE (V) Pulse Width PW (ns) Collector Current IC (A) Collector Current IC (A) Case Temperature TC (°C) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Data Sheet D14866EJ2V0DS 3 Fall Time tf (µs) StorageTime tstg (µs) Turn-On Time ton (µs) Pulse test 4 Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE 2SA1008 Collector Current IC (A) Collector Current IC (A) Data Sheet D14866EJ2V0DS Pulse test Collector Current IC (A) 2SA1008 PACKAGE DRAWING (UNIT: mm) 1. Base 2. Collector 3. Emitter 4. Fin (collector) Data Sheet D14866EJ2V0DS 5 2SA1008 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4