DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such as pulse 2SD560 TO-220AB motor drivers and relay drivers, and PC terminals. FEATURES (TO-220AB) • C-to-E reverse diode inserted • Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO Collector current (DC) IC(DC) 7.0 ±5.0 A Collector current (pulse) IC(pulse) ±8.0 A Base current (DC) Symbol Conditions PW ≤ 10 ms, duty cycle ≤ 50% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C V 0.5 A 30 W 1.5 W 150 −55 to +150 °C °C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14863EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD560 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector cutoff current DC current gain ICBO Conditions MIN. VCB = 100 V, IE = 0 A hFE1 hFE2 VCE = 2.0 V, IC = 3.0 A Note 2,000 VCE = 2.0 V, IC = 5.0 A Note 500 MAX. Unit 1.0 µA 6,000 15,000 Note Collector saturation voltage VCE(sat) IC = 3.0 A, IB = 3.0 mA 0.9 1.5 V Base saturation voltage VBE(sat) IC = 3.0 A, IB = 3.0 mANote 1.6 2.0 V IC = 3.0 A, RL = 16.7 Ω, IB1 = −IB2 = 3.0 mA, VCC ≅ 50 V Refer to the test circuit. 1.0 µs 3.5 µs 1.2 µs Turn-on time ton Storage time tstg Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking MB LB KB hFE1 2,000 to 5,000 3,000 to 7,000 5,000 to 15,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D14863EJ3V0DS 2SD560 Heatsink’: 2.0 mm Aluminum, bpard No insulating boad Silicon brease coating Horizontal level With infinite heatsink (Tc = 25°C) Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Without heatsink Single pulse Temperature T (°C) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (A) Pulse test Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Pulse test Collector Current IC (A) Data Sheet D14863EJ3V0DS 3 2SD560 PACKAGE DRAWING (UNIT: mm) 1. Base 2. Collector 3. Emitter 4. Fin (collector) 4 Data Sheet D14863EJ3V0DS 2SD560 [MEMO] Data Sheet D14863EJ3V0DS 5 2SD560 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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