NEC 2SA1010K

DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and highfrequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−7.0
A
IC(pulse)*
−15
A
IB(DC)
−3.5
A
Total power dissipation
PT (Tc = 25 °C)
40
W
Total power dissipation
PT (Ta = 25 °C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
Pin Connection
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = −5.0 A, IB1 = −0.5 A, L = 1 mH
−100
V
Collector to emitter voltage
VCEX(SUS)1
IC = −5.0 A, IB1 = −IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
−100
V
Collector to emitter voltage
VCEX(SUS)2
IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
−100
V
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −100 V, RBE = 51 Ω, Ta = 125 °C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −100 V, VBE(OFF) = 1.5 V
−10
µA
Collector cutoff current
ICEX2
VCE = −100 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
−1.0
mA
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1
VCE = −5.0 V, IC = −0.5 A*
40
200
DC current gain
hFE2
VCE = −5.0 V, IC = −3.0 A*
40
200
DC current gain
hFE3
VCE = −5.0 V, IC = −5.0 A*
20
Collector saturation voltage
VCE(sat)
IC = −5.0 A, IB = −0.5 A*
−0.6
V
Base saturation voltage
VBE(sat)
IC = −5.0 A, IB = −0.5 A*
−1.5
V
IC = −5.0 A, RL = 10 Ω,
IB1 = −IB2 = −0.5 A, VCC ≅ −50 V
0.5
µs
1.5
µs
0.5
µs
Turn-on time
ton
Storage time
tstg
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Ambient Temperature Ta (°C)
Collector Current IC (A)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
2
Unit
Collector to Emitter Voltage VCE (V)
Data Sheet D16118EJ2V0DS
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
DC Current Gain hFE
Collector Current IC (A)
Collector Current IC (A)
Transient Thermal Resistance θth(j-c) (°C/W)
IC Derating dT (%)
2SA1010
Case Temperature TC (°C)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
Data Sheet D16118EJ2V0DS
3
Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)
2SA1010
Collector Current IC (A)
Base current
waveform
Collector current
waveform
4
Data Sheet D16118EJ2V0DS
2SA1010
[MEMO]
Data Sheet D16118EJ2V0DS
5
2SA1010
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4