DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and highfrequency power amplifiers. FEATURES • Low collector saturation voltage • Fast switching speed • Complementary transistor: 2SC2334 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −7.0 A IC(pulse)* −15 A IB(DC) −3.5 A Total power dissipation PT (Tc = 25 °C) 40 W Total power dissipation PT (Ta = 25 °C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) Pin Connection * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16118EJ2V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1010 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = −5.0 A, IB1 = −0.5 A, L = 1 mH −100 V Collector to emitter voltage VCEX(SUS)1 IC = −5.0 A, IB1 = −IB2 = −0.5 A, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V Collector to emitter voltage VCEX(SUS)2 IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −100 V, RBE = 51 Ω, Ta = 125 °C −1.0 mA Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V, Ta = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1 VCE = −5.0 V, IC = −0.5 A* 40 200 DC current gain hFE2 VCE = −5.0 V, IC = −3.0 A* 40 200 DC current gain hFE3 VCE = −5.0 V, IC = −5.0 A* 20 Collector saturation voltage VCE(sat) IC = −5.0 A, IB = −0.5 A* −0.6 V Base saturation voltage VBE(sat) IC = −5.0 A, IB = −0.5 A* −1.5 V IC = −5.0 A, RL = 10 Ω, IB1 = −IB2 = −0.5 A, VCC ≅ −50 V 0.5 µs 1.5 µs 0.5 µs Turn-on time ton Storage time tstg Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 40 to 80 60 to 120 100 to 200 2 mm aluminum board, no insulating board, grease coating, natural air cooling With infinite heatsink Ambient Temperature Ta (°C) Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Unit Collector to Emitter Voltage VCE (V) Data Sheet D16118EJ2V0DS Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE Collector Current IC (A) Collector Current IC (A) Transient Thermal Resistance θth(j-c) (°C/W) IC Derating dT (%) 2SA1010 Case Temperature TC (°C) Pulse Width PW (ms) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) Data Sheet D16118EJ2V0DS 3 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) 2SA1010 Collector Current IC (A) Base current waveform Collector current waveform 4 Data Sheet D16118EJ2V0DS 2SA1010 [MEMO] Data Sheet D16118EJ2V0DS 5 2SA1010 • The information in this document is current as of July, 2001. 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