DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this transistor features a small resin-molded insulation type package, thus contributing to high-density mounting and mounting cost reduction. FEATURES • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = 2 V, IC = 2 A) • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Electrode Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A IC(pulse)* −10 A IB(DC) −0.5 A Total power dissipation PT (TC = 25°C) 20 W Total power dissipation PT (TA = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) 1. Base 2. Collector 3. Emitter EQUIVALENT CIRCUIT * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13660EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SB1430 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Conditions MIN. TYP. Unit −1.0 µA Collector cutoff current ICBO VCB = −100 V, IE = 0 DC current gain hFE1* VCE = −2.0 V, IC = −2.0 A 2,000 DC current gain hFE2* VCE = −2.0 V, IC = −4.0 A 500 Collector saturation voltage VCE(sat)* IC = −2.0 A, IB = −2.0 mA −1.5 V Base saturation voltage VBE(sat)* IC = −2.0 A, IB = −2.0 mA −2.0 V Gain bandwidth product fT VCE = −5.0 V, IC = −0.5 A 80 MHz 20,000 Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 60 pF Turn-on time ton 0.5 µs Storage time tstg IC = −2.0 A, IB1 = −IB2 = −2.0 mA, RL = 25 Ω, VCC ≅ 50 V 1.0 µs 1.0 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 MAX. Data Sheet D13660EJ1V0DS 2SB1430 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Case Temperature TC (°C) Case Temperature TC (°C) Collector Current IC (A) Single pulse Transient Thermal Resistance r(t) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D13660EJ1V0DS 3 2SB1430 DC Current Gain hFE Collector Current IC (A) Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Pulse test Collector Current IC (A) 4 Data Sheet D13660EJ1V0DS Collector Current IC (A) 2SB1430 [MEMO] Data Sheet D13660EJ1V0DS 5 2SB1430 • The information in this document is current as of July, 2001. 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