DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES • Mold package that does not require an insulating board or insulation bushing • Fast switching speed • Low collector-to-emitter saturation voltage: VCE(sat) ≤ −0.3 V (MAX.) @IC = −3 A QUALITY GRADES • Standard Electrode Connection <1> Base <2> Collector <3> Emitter Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −150 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V Collector current ID(DC) −5.0 A Collector current IC(pulse) −10 A Base current IB(DC) −2.5 A PW ≤ 300 µs, duty cycle ≤ 10% Total power dissipation PT Tc = 25°C 25 W Total power dissipation PT Ta = 25°C 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16122EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1650 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. MAX. Unit −10 µA −10 µA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = −5 V, IC = 0 DC current gain hFE1* VCE = −2 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2 V, IC = −1 A 100 DC current gain hFE3* VCE = −2 V, IC = −3 A 60 Collector saturation voltage VCE(sat)1* IC = −3 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4 A, IB = −0.2 A −1.5 Gain bandwidth product fT − 400 − − V VCE = −10 V, IC = −0.5 A 150 MHz Collector capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 130 pF Turn-on time ton 0.3 µs Storage time tstg IC = −3 A, IB1 = −IB2 = −0.15 A, RL = 10 Ω, VCC = −50 V Refer to the test circuit. 1.5 µs 0.4 µs Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. VCB = −100 V, IE = 0 Data Sheet D16122EJ1V0DS 2SA1650 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(j−c)(t) (°C/W) Collector Current IC (A) Case Temperature TC (°C) Single pulse Pulse Width PW (s) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Data Sheet D16122EJ1V0DS Collector Current IC (A) 3 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) 4 Collector Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Collector Saturation Voltage VCE(sat) (V) Pulse test Base Saturation Voltage VBE(sat) (V) 2SA1650 Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Data Sheet D16122EJ1V0DS Pulse test Collector Current IC (A) Collector to Base Voltage VCB (V) 2SA1650 [MEMO] Data Sheet D16122EJ1V0DS 5 2SA1650 • The information in this document is current as of July, 2001. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4