DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.3 µs MAX. (@IC = −3 A) • High DC current gain and excellent linearity ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A IC(pulse)* −10 A IB(DC) −2.5 A Total power dissipation PT (Tc = 25 °C) 18 W Total power dissipation PT (Ta = 25 °C) 1.0**, 2.0*** W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) *: Electrode Connection 1. Base 2. Collector 3. Emitter PW ≤ 300 µs, duty cycle ≤ 10% **: Printing board mounted 2 ***: 7.5 mm × 0.7 mm ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16121EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1648, 2SA1648-Z ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB2 = −IB1 = −0.3 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped MAX. Unit V −60 V Collector cutoff current ICBO VCE = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, Ta = 125 °C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, Ta = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60 Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V Collector capacitance Cob 200 400 VCB = −10 V, IE = 0, f = 1.0 MHz 80 pF 90 MHz Gain bandwidth product fT VCE = −10 V, IC = 0.5 A Turn-on time ton Storage time tstg IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −50 V Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/Pulsed hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. −60 Data Sheet D16121EJ1V0DS 0.3 µs 1.5 µs 0.3 µs 2SA1648, 2SA1648-Z IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Collector Current IC (A) Single pulse Transient Thermal Resistance rth(j−c) (°C/W) Case Temperature TC (°C) Collector to Emitter Voltage VCE (V) Single pulse Pulse Width PW (s) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Data Sheet D16121EJ1V0DS Collector Current IC (A) 3 StorageTime tstg (µs) Fall Time tf (µs) 4 Collector Current IC (A) Collector Capacitance Cob (pF) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Pulse test Gain Bandwidth Product fT (MHz) 2SA1648, 2SA1648-Z Collector Current IC (A) Collector Current IC (A) Collector to Base Voltage VCB (V) Collector Current IC (A) Data Sheet D16121EJ1V0DS Collector to Emitter Voltage VCE (V) 2SA1648, 2SA1648-Z [MEMO] Data Sheet D16121EJ1V0DS 5 2SA1648, 2SA1648-Z • The information in this document is current as of July, 2001. 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