DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB1432 Isolated TO-220 In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A) • Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO V Collector current (DC) IC(DC) −8.0 – +10 – +20 A Collector current (pulse) Base current (DC) Total power dissipation Symbol IC(pulse) Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) PT TC = 25°C TA = 25°C Junction temperature Tj Storage temperature Tstg A −1.0 A 30 W 2.0 W 150 −55 to +150 °C °C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14859EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SB1432 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Collector cutoff current Symbol Conditions ICBO VCB = −100 V, IE = 0 A MIN. MAX. Unit −10 µA V hFE VCE = −2.0 V, IC = −10 ANote Collector saturation voltage VCE(sat) IC = −10 A, IB = −25 mANote 6,000 −1.1 30,000 −1.5 Base saturation voltage VBE(sat) IC = −10 A, IB = −25 mANote −1.8 −2.2 Gain bandwidth product fT VCE = −5.0 V, IC = −1.0 A 80 MHz DC current gain 1,000 V Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 1.0 MHz 200 pF Turn-on time ton 1.0 µs Storage time tstg IC = −10 A, RL = 5.0 Ω, IB1 = −IB2 = −25 mA, VCC ≅ −50 V Refer to the test circuit. 5.0 µs 2.0 µs Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D14859EJ2V0DS 2SB1432 Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Case Temperature TC (°C) Collector current IC (A) Collector current IC (A) Case Temperature TC (°C) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(t) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D14859EJ2V0DS 3 DC Current Gain hFE Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SB1432 Collector Current IC (A) 4 Pulse test Collector Current IC (A) Data Sheet D14859EJ2V0DS 2SB1432 PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base 2. Collector 3. Emitter Data Sheet D14859EJ2V0DS 5 2SB1432 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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