DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. ORDERING INFORMATION Ordering Name Package 2SD2162 Isolated TO-220 In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO Collector current (DC) IC(DC) 7.0 +8.0, −5.0 A Collector current (pulse) IC(pulse) +12, −8.0 A Base current (DC) Symbol Conditions PW ≤ 10 ms, duty cycle ≤ 50% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C V 0.8 A 25 W 2.0 W 150 −55 to +150 °C °C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14865EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2162 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector cutoff current ICBO DC current gain Conditions MIN. VCB = 100 V, IE = 0 A hFE1 hFE2 VCE = 2.0 V, IC = 3.0 A Note 2,000 VCE = 2.0 V, IC = 5.0 A Note 500 Note MAX. Unit 1.0 µA 15,000 Collector saturation voltage VCE(sat) IC = 3.0 A, IB = 3.0 mA 0.9 1.5 V Base saturation voltage VBE(sat) IC = 3.0 A, IB = 3.0 mANote 1.6 2.0 V Gain bandwidth product fT VCE = 5.0 V, IC = 0.8 A 30 MHz Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF Turn-on time ton 1.0 µs Storage time tstg IC = 3.0 A, RL = 16.7 Ω, IB1 = −IB2 = 3.0 mA, VCC ≅ 50 V Refer to the test circuit. 3.5 µs 1.2 µs Collector capacitance Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 3,000 to 7,000 5,000 to 15,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 2 TYP. 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