DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 4.5 ±0.2 10.0 ±0.3 3.2 ±0.2 FEATURES 2.7 ±0.2 • Low On-Resistance QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended 0.7 ±0.1 13.5 MIN. 4 ±0.2 3 ±0.1 15.0 ±0.3 RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) • Low Ciss Ciss = 1500 pF TYP. • High Avalanche Capability Ratings • Built-in G-S Gate Protection Diodes 12.0 ±0.2 RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) 2.5 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.65 ±0.1 applications. 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±30 A Drain Current (pulse)* ID(pulse) ±120 A Total Power Dissipation (Tc = 25 ˚C) PT1 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 150 ˚C Channel Temperature Tch Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 30 A Single Avalanche Energy** EAS 90 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 MP-45F(ISOLATED TO-220) Drain Body Diode Gate Gate Protection Diode Source ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this document is subject to change without notice. Document No. TC-2497 (O. D. No. TC-8029) Date Published November 1994 P Printed in Japan © 1994 2SK2410 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. TYP. RDS(on)1 MAX. UNIT 40 mΩ VGS = 10 V, ID = 15 A 40 60 mΩ VGS = 4 V, ID = 15 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 15 A 10 µA VDS = 60 V, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 31 Drain to Source On-Resistance RDS(on)2 Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 Forward Transfer Admittance | yfs | 15 27 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 1500 pF VDS = 10 V Output Capacitance Coss 720 pF VGS = 0 Reverse Transfer Capacitance Crss 190 pF f = 1 MHz Turn-On Delay Time td(on) 22 ns ID = 15 A Rise Time tr 260 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 130 ns VDD = 30 V Fall Time tf 150 ns RG = 10 Ω Total Gate Charge QG 50 nC ID = 30 A Gate to Source Charge QGS 5.0 nC VDD = 48 V Gate to Drain Charge QGD 15 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.1 V IF = 30 A, VGS = 0 Reverse Recovery Time trr 110 ns IF = 30 A, VGS = 0 Reverse Recovery Charge Qrr 320 nC di/dt = 100 A/µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. RG = 25 Ω PG RL L 50 Ω RG RG = 10 Ω PG. VDD VDD VGS VGS Wave 010 % Form IAS ID ID Wave Form VGS 0 BVDSS VDS VDD t t = 1µs Duty Cycle ≤ 1 % 90 % 90 % ID VGS = 20 → 0 V VGS (on) 90 % ID 10 % 0 10 % td (on) tr ton td (off) tf toff Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2410 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Disslipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 40 30 20 10 0 100 120 140 160 20 40 Tc - Case Temperature - ˚C 100 20 DC ipa tio n Tc = 25 ˚C 1 Single Pulse 0.1 1 s µ 10 10 0 m s m Pulsed VGS = 6 V 80 s ID - Drain Current - A 10 µ ID - Drain Current - A = 10 1 VGS =10V 90 ID(pulse) d ite ) m 0V I L 1 n) = ID (DC) (o S DS R t VG P ow (a er Di ss 100 120 140 160 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 100 80 Tc - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA PW 60 s m s 70 60 VGS = 4 V 50 40 30 20 Lim ite 10 d 10 100 VDS - Drain to Source Voltage - V 0 2 4 6 8 10 12 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed VDS = 10 V 100 TA = –25 ˚C 25 ˚C 125 ˚C 10 0 5 10 15 VGS - Drain to Source Voltage - V 3 2SK2410 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth (ch - a) = 62.5 ˚C/W 10 Rth (ch - c) = 3.57 ˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 lyfsl - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 VDS = 10 V Pulsed TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 100 10 1 1 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 50 40 30 ID = 15 A 20 10 0 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 50 30 VGS = 4 V VGS = 10 V 20 10 0 1 10 ID - Drain Current - A 4 20 25 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 40 15 VGS - Gate to Source Voltage - V 100 VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 10 2.0 VDS = 10 V ID = 1mA 1.5 1.0 0.5 0 –50 –25 0 25 50 75 100 125 Tch - Channel Temperature - ˚C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 80 1000 70 ISD - Diode Forward Current - A 60 50 VGS = 4 V 40 VGS = 10 V 30 20 10 Pulsed 100 10 V ID = 15 A 0 –50 1 0 50 100 150 0 0.5 Tch - Channel Temperature - ˚C VGS = 0 f = 1 MHz Ciss 1000 Coss Crss 100 10 td(off) 100 tf tr td(on) 10 VDD = 30 V VGS = 10 V RG = 10 Ω 1.0 0.1 100 1.0 VDS - Drain to Source Voltage - V 10 ID - Drain Current - A 100 80 16 ID = 30 A VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns di/dt = 50 A/µs VGS = 0 1.0 100 DYANMIC INPUT/OUTPUT CHARACTERISTICS 100 10 0.1 10 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 2.0 1000 10 1 1.5 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VGS = 0 10 70 14 60 12 VDD = 48 V 50 10 40 30 8 VDS VGS 6 20 4 10 2 0 10 20 30 40 50 60 70 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2410 80 Qg - Gate Charge - nC 5 2SK2410 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 EA S 10 = 90 mJ VDD = 30 V VGS = 20 V → 0 RG = 25 Ω 1.0 10 µ 100 µ 80 60 40 20 0 1m L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 30 A IAS = 30 A dt - Energy Derating Factor - % IAS - Single Avalanche Energy -mJ 100 10m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SK2410 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2410 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6